FR2371778A1 - Dispositif semi-conducteur - Google Patents
Dispositif semi-conducteurInfo
- Publication number
- FR2371778A1 FR2371778A1 FR7734932A FR7734932A FR2371778A1 FR 2371778 A1 FR2371778 A1 FR 2371778A1 FR 7734932 A FR7734932 A FR 7734932A FR 7734932 A FR7734932 A FR 7734932A FR 2371778 A1 FR2371778 A1 FR 2371778A1
- Authority
- FR
- France
- Prior art keywords
- manufacture
- substrate
- integrated circuits
- semiconductor device
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
L'invention concerne la fabrication des circuits intégrés. Pour réaliser un contact électrique entre une électrode d'aluminium 12 et un substrat 2, on creuse un trou de contact 10 dans la couche de silice 8 qui recouvre le substrat. Cette structure permet d'augmenter l'aire de contact, tout en réduisant les dimensions du trou 10. Application à la fabrication des circuits intégrés complexes.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13920176A JPS5363983A (en) | 1976-11-19 | 1976-11-19 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2371778A1 true FR2371778A1 (fr) | 1978-06-16 |
FR2371778B1 FR2371778B1 (fr) | 1982-12-10 |
Family
ID=15239900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7734932A Granted FR2371778A1 (fr) | 1976-11-19 | 1977-11-21 | Dispositif semi-conducteur |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5363983A (fr) |
DE (1) | DE2751667A1 (fr) |
FR (1) | FR2371778A1 (fr) |
GB (1) | GB1538650A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2503457A1 (fr) * | 1981-03-31 | 1982-10-08 | Rca Corp | Systeme de cellules solaires connectees en serie sur un substrat unique |
EP0174185A2 (fr) * | 1984-09-03 | 1986-03-12 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur et procédé pour sa fabrication |
FR2570880A1 (fr) * | 1984-09-27 | 1986-03-28 | Rca Corp | Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5946415B2 (ja) * | 1978-04-28 | 1984-11-12 | 株式会社日立製作所 | 半導体装置の製造方法 |
US4443651A (en) * | 1981-03-31 | 1984-04-17 | Rca Corporation | Series connected solar cells on a single substrate |
US4713680A (en) * | 1986-06-30 | 1987-12-15 | Motorola, Inc. | Series resistive network |
DE19930797A1 (de) * | 1999-07-03 | 2001-01-04 | Bosch Gmbh Robert | Elektrisches Halbleiterbauelement |
US7045407B2 (en) * | 2003-12-30 | 2006-05-16 | Intel Corporation | Amorphous etch stop for the anisotropic etching of substrates |
US7494858B2 (en) * | 2005-06-30 | 2009-02-24 | Intel Corporation | Transistor with improved tip profile and method of manufacture thereof |
-
1976
- 1976-11-19 JP JP13920176A patent/JPS5363983A/ja active Pending
-
1977
- 1977-11-16 GB GB47732/77A patent/GB1538650A/en not_active Expired
- 1977-11-18 DE DE19772751667 patent/DE2751667A1/de active Pending
- 1977-11-21 FR FR7734932A patent/FR2371778A1/fr active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2503457A1 (fr) * | 1981-03-31 | 1982-10-08 | Rca Corp | Systeme de cellules solaires connectees en serie sur un substrat unique |
EP0174185A2 (fr) * | 1984-09-03 | 1986-03-12 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur et procédé pour sa fabrication |
EP0174185A3 (en) * | 1984-09-03 | 1988-01-07 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
US4860084A (en) * | 1984-09-03 | 1989-08-22 | Kabushiki Kaisha Toshiba | Semiconductor device MOSFET with V-shaped drain contact |
FR2570880A1 (fr) * | 1984-09-27 | 1986-03-28 | Rca Corp | Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu |
Also Published As
Publication number | Publication date |
---|---|
GB1538650A (en) | 1979-01-24 |
FR2371778B1 (fr) | 1982-12-10 |
DE2751667A1 (de) | 1978-05-24 |
JPS5363983A (en) | 1978-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |