FR2371778A1 - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR2371778A1
FR2371778A1 FR7734932A FR7734932A FR2371778A1 FR 2371778 A1 FR2371778 A1 FR 2371778A1 FR 7734932 A FR7734932 A FR 7734932A FR 7734932 A FR7734932 A FR 7734932A FR 2371778 A1 FR2371778 A1 FR 2371778A1
Authority
FR
France
Prior art keywords
manufacture
substrate
integrated circuits
semiconductor device
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7734932A
Other languages
English (en)
Other versions
FR2371778B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2371778A1 publication Critical patent/FR2371778A1/fr
Application granted granted Critical
Publication of FR2371778B1 publication Critical patent/FR2371778B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/40Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41766Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66636Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne la fabrication des circuits intégrés. Pour réaliser un contact électrique entre une électrode d'aluminium 12 et un substrat 2, on creuse un trou de contact 10 dans la couche de silice 8 qui recouvre le substrat. Cette structure permet d'augmenter l'aire de contact, tout en réduisant les dimensions du trou 10. Application à la fabrication des circuits intégrés complexes.
FR7734932A 1976-11-19 1977-11-21 Dispositif semi-conducteur Granted FR2371778A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13920176A JPS5363983A (en) 1976-11-19 1976-11-19 Semiconductor device

Publications (2)

Publication Number Publication Date
FR2371778A1 true FR2371778A1 (fr) 1978-06-16
FR2371778B1 FR2371778B1 (fr) 1982-12-10

Family

ID=15239900

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7734932A Granted FR2371778A1 (fr) 1976-11-19 1977-11-21 Dispositif semi-conducteur

Country Status (4)

Country Link
JP (1) JPS5363983A (fr)
DE (1) DE2751667A1 (fr)
FR (1) FR2371778A1 (fr)
GB (1) GB1538650A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2503457A1 (fr) * 1981-03-31 1982-10-08 Rca Corp Systeme de cellules solaires connectees en serie sur un substrat unique
EP0174185A2 (fr) * 1984-09-03 1986-03-12 Kabushiki Kaisha Toshiba Dispositif semi-conducteur et procédé pour sa fabrication
FR2570880A1 (fr) * 1984-09-27 1986-03-28 Rca Corp Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946415B2 (ja) * 1978-04-28 1984-11-12 株式会社日立製作所 半導体装置の製造方法
US4443651A (en) * 1981-03-31 1984-04-17 Rca Corporation Series connected solar cells on a single substrate
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
DE19930797A1 (de) * 1999-07-03 2001-01-04 Bosch Gmbh Robert Elektrisches Halbleiterbauelement
US7045407B2 (en) * 2003-12-30 2006-05-16 Intel Corporation Amorphous etch stop for the anisotropic etching of substrates
US7494858B2 (en) * 2005-06-30 2009-02-24 Intel Corporation Transistor with improved tip profile and method of manufacture thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2503457A1 (fr) * 1981-03-31 1982-10-08 Rca Corp Systeme de cellules solaires connectees en serie sur un substrat unique
EP0174185A2 (fr) * 1984-09-03 1986-03-12 Kabushiki Kaisha Toshiba Dispositif semi-conducteur et procédé pour sa fabrication
EP0174185A3 (en) * 1984-09-03 1988-01-07 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
US4860084A (en) * 1984-09-03 1989-08-22 Kabushiki Kaisha Toshiba Semiconductor device MOSFET with V-shaped drain contact
FR2570880A1 (fr) * 1984-09-27 1986-03-28 Rca Corp Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu

Also Published As

Publication number Publication date
GB1538650A (en) 1979-01-24
FR2371778B1 (fr) 1982-12-10
DE2751667A1 (de) 1978-05-24
JPS5363983A (en) 1978-06-07

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Legal Events

Date Code Title Description
ST Notification of lapse