FR2396413A1 - Composant semi-conducteur a couche de resistance de conductibilite du type p - Google Patents
Composant semi-conducteur a couche de resistance de conductibilite du type pInfo
- Publication number
- FR2396413A1 FR2396413A1 FR7819523A FR7819523A FR2396413A1 FR 2396413 A1 FR2396413 A1 FR 2396413A1 FR 7819523 A FR7819523 A FR 7819523A FR 7819523 A FR7819523 A FR 7819523A FR 2396413 A1 FR2396413 A1 FR 2396413A1
- Authority
- FR
- France
- Prior art keywords
- resistance layer
- semiconductor component
- type conductive
- layer semiconductor
- conductive resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Details Of Resistors (AREA)
Abstract
L'invention concerne un composant semi-conducteur comprenant une résistance Ce composant comporte une couche de résistance de conductibilité du type P formée à la surface principale d'un substrat de silicium. La couche de résistance est reliée à des électrodes à ses deux extrémités et elle est disposée suivant un axe cristallin 001 si la surface principale est une face cristalline 110 et suivant un axe 010 ou 011 si la surface principale est une face cristalline 100. L'invention s'applique notamment à la fabrication des circuits intégrés.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7662077A JPS5412575A (en) | 1977-06-29 | 1977-06-29 | Semiconductor device |
JP7646477A JPS5412280A (en) | 1977-06-29 | 1977-06-29 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2396413A1 true FR2396413A1 (fr) | 1979-01-26 |
FR2396413B1 FR2396413B1 (fr) | 1983-01-14 |
Family
ID=26417613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7819523A Granted FR2396413A1 (fr) | 1977-06-29 | 1978-06-29 | Composant semi-conducteur a couche de resistance de conductibilite du type p |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2828608B2 (fr) |
FR (1) | FR2396413A1 (fr) |
GB (1) | GB2000640A (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122134A (en) * | 1980-02-29 | 1981-09-25 | Toshiba Corp | Resin-sealed type semiconductor device |
JPS60253268A (ja) * | 1984-05-29 | 1985-12-13 | Meidensha Electric Mfg Co Ltd | 半導体装置 |
US4606781A (en) * | 1984-10-18 | 1986-08-19 | Motorola, Inc. | Method for resistor trimming by metal migration |
-
1978
- 1978-06-29 DE DE19782828608 patent/DE2828608B2/de not_active Withdrawn
- 1978-06-29 GB GB7828267A patent/GB2000640A/en not_active Withdrawn
- 1978-06-29 FR FR7819523A patent/FR2396413A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2396413B1 (fr) | 1983-01-14 |
GB2000640A (en) | 1979-01-10 |
DE2828608A1 (de) | 1979-01-04 |
DE2828608B2 (de) | 1981-02-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |