FR2396413A1 - Composant semi-conducteur a couche de resistance de conductibilite du type p - Google Patents

Composant semi-conducteur a couche de resistance de conductibilite du type p

Info

Publication number
FR2396413A1
FR2396413A1 FR7819523A FR7819523A FR2396413A1 FR 2396413 A1 FR2396413 A1 FR 2396413A1 FR 7819523 A FR7819523 A FR 7819523A FR 7819523 A FR7819523 A FR 7819523A FR 2396413 A1 FR2396413 A1 FR 2396413A1
Authority
FR
France
Prior art keywords
resistance layer
semiconductor component
type conductive
layer semiconductor
conductive resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7819523A
Other languages
English (en)
Other versions
FR2396413B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7662077A external-priority patent/JPS5412575A/ja
Priority claimed from JP7646477A external-priority patent/JPS5412280A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2396413A1 publication Critical patent/FR2396413A1/fr
Application granted granted Critical
Publication of FR2396413B1 publication Critical patent/FR2396413B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Details Of Resistors (AREA)

Abstract

L'invention concerne un composant semi-conducteur comprenant une résistance Ce composant comporte une couche de résistance de conductibilité du type P formée à la surface principale d'un substrat de silicium. La couche de résistance est reliée à des électrodes à ses deux extrémités et elle est disposée suivant un axe cristallin 001 si la surface principale est une face cristalline 110 et suivant un axe 010 ou 011 si la surface principale est une face cristalline 100. L'invention s'applique notamment à la fabrication des circuits intégrés.
FR7819523A 1977-06-29 1978-06-29 Composant semi-conducteur a couche de resistance de conductibilite du type p Granted FR2396413A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7662077A JPS5412575A (en) 1977-06-29 1977-06-29 Semiconductor device
JP7646477A JPS5412280A (en) 1977-06-29 1977-06-29 Semiconductor device

Publications (2)

Publication Number Publication Date
FR2396413A1 true FR2396413A1 (fr) 1979-01-26
FR2396413B1 FR2396413B1 (fr) 1983-01-14

Family

ID=26417613

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7819523A Granted FR2396413A1 (fr) 1977-06-29 1978-06-29 Composant semi-conducteur a couche de resistance de conductibilite du type p

Country Status (3)

Country Link
DE (1) DE2828608B2 (fr)
FR (1) FR2396413A1 (fr)
GB (1) GB2000640A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122134A (en) * 1980-02-29 1981-09-25 Toshiba Corp Resin-sealed type semiconductor device
JPS60253268A (ja) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd 半導体装置
US4606781A (en) * 1984-10-18 1986-08-19 Motorola, Inc. Method for resistor trimming by metal migration

Also Published As

Publication number Publication date
FR2396413B1 (fr) 1983-01-14
GB2000640A (en) 1979-01-10
DE2828608A1 (de) 1979-01-04
DE2828608B2 (de) 1981-02-05

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Legal Events

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CD Change of name or company name
ST Notification of lapse