FR2396417A1 - Composant semi-conducteur comprenant une resistance - Google Patents
Composant semi-conducteur comprenant une resistanceInfo
- Publication number
- FR2396417A1 FR2396417A1 FR7819524A FR7819524A FR2396417A1 FR 2396417 A1 FR2396417 A1 FR 2396417A1 FR 7819524 A FR7819524 A FR 7819524A FR 7819524 A FR7819524 A FR 7819524A FR 2396417 A1 FR2396417 A1 FR 2396417A1
- Authority
- FR
- France
- Prior art keywords
- face
- resistor
- semiconductor component
- component including
- units
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
L'invention concerne un composant semi-conducteur comprenant une résistance. Ce composant comporte une couche de résistance constituée par des premiere et seconde unités de même valeur de résistance et perpendiculaires entre elles. Si les unités de résistance sont du type P, la surface principale est une face 100, une face 511, une face 811 ou une face 911. Si les unités de résistance sont du type N, la surface principale est une face 111. L'invention s'applique notamment à la fabrication des circuits intégrés.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7646577A JPS5412281A (en) | 1977-06-29 | 1977-06-29 | Semiconductor device |
JP8359177A JPS5419378A (en) | 1977-07-14 | 1977-07-14 | Semiconductor device |
JP8359377A JPS5439583A (en) | 1977-07-14 | 1977-07-14 | Semicunductor device |
JP8359577A JPS5419380A (en) | 1977-07-14 | 1977-07-14 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2396417A1 true FR2396417A1 (fr) | 1979-01-26 |
FR2396417B1 FR2396417B1 (fr) | 1983-01-21 |
Family
ID=27465948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7819524A Granted FR2396417A1 (fr) | 1977-06-29 | 1978-06-29 | Composant semi-conducteur comprenant une resistance |
Country Status (4)
Country | Link |
---|---|
US (1) | US4236832A (fr) |
DE (1) | DE2828605C3 (fr) |
FR (1) | FR2396417A1 (fr) |
GB (1) | GB2000639B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2396418A1 (fr) * | 1977-06-29 | 1979-01-26 | Tokyo Shibaura Electric Co | Dispositif a semi-conducteurs integre dont les caracteristiques ne sont pas alterees par l'encapsulage |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688350A (en) * | 1979-12-19 | 1981-07-17 | Toshiba Corp | Semiconductor device |
DE3001772A1 (de) * | 1980-01-18 | 1981-07-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
JPS56122134A (en) * | 1980-02-29 | 1981-09-25 | Toshiba Corp | Resin-sealed type semiconductor device |
US5371411A (en) * | 1980-09-01 | 1994-12-06 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
US5552639A (en) * | 1980-09-01 | 1996-09-03 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
JPS5745259A (en) * | 1980-09-01 | 1982-03-15 | Hitachi Ltd | Resin sealing type semiconductor device |
JPS5925260A (ja) * | 1982-08-02 | 1984-02-09 | Fujitsu Ltd | 半導体装置 |
JP3171240B2 (ja) * | 1998-01-13 | 2001-05-28 | 日本電気株式会社 | 抵抗素子、それを用いた半導体装置およびこれらの製造方法 |
DE10154497A1 (de) * | 2001-11-07 | 2003-05-15 | Infineon Technologies Ag | Integrierter Widerstand |
DE102006061721B4 (de) * | 2006-12-28 | 2016-12-29 | Infineon Technologies Ag | Kompensationsgrößen-Bereitstellungsschaltung, Spannungs-Kompensationsschaltung, spannungskompensierte Schaltung, Vorrichtung zur Bereitstellung einer Kompensationsgröße, Verfahren zum Bereitstellen einer Kompensationsgröße und Ring-Oszillator |
US9823090B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a target object |
US7923996B2 (en) * | 2008-02-26 | 2011-04-12 | Allegro Microsystems, Inc. | Magnetic field sensor with automatic sensitivity adjustment |
US8447556B2 (en) * | 2009-02-17 | 2013-05-21 | Allegro Microsystems, Inc. | Circuits and methods for generating a self-test of a magnetic field sensor |
US8542010B2 (en) * | 2009-07-22 | 2013-09-24 | Allegro Microsystems, Llc | Circuits and methods for generating a diagnostic mode of operation in a magnetic field sensor |
US8680846B2 (en) | 2011-04-27 | 2014-03-25 | Allegro Microsystems, Llc | Circuits and methods for self-calibrating or self-testing a magnetic field sensor |
US8604777B2 (en) | 2011-07-13 | 2013-12-10 | Allegro Microsystems, Llc | Current sensor with calibration for a current divider configuration |
US9201122B2 (en) | 2012-02-16 | 2015-12-01 | Allegro Microsystems, Llc | Circuits and methods using adjustable feedback for self-calibrating or self-testing a magnetic field sensor with an adjustable time constant |
US9817078B2 (en) | 2012-05-10 | 2017-11-14 | Allegro Microsystems Llc | Methods and apparatus for magnetic sensor having integrated coil |
US9383425B2 (en) | 2012-12-28 | 2016-07-05 | Allegro Microsystems, Llc | Methods and apparatus for a current sensor having fault detection and self test functionality |
US10725100B2 (en) | 2013-03-15 | 2020-07-28 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an externally accessible coil |
US9810519B2 (en) | 2013-07-19 | 2017-11-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as tooth detectors |
US10495699B2 (en) | 2013-07-19 | 2019-12-03 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target |
US10145908B2 (en) | 2013-07-19 | 2018-12-04 | Allegro Microsystems, Llc | Method and apparatus for magnetic sensor producing a changing magnetic field |
EP3199967B1 (fr) | 2013-12-26 | 2023-05-17 | Allegro MicroSystems, LLC | Procédés et appareil de diagnostic de capteur |
US9645220B2 (en) | 2014-04-17 | 2017-05-09 | Allegro Microsystems, Llc | Circuits and methods for self-calibrating or self-testing a magnetic field sensor using phase discrimination |
US9735773B2 (en) | 2014-04-29 | 2017-08-15 | Allegro Microsystems, Llc | Systems and methods for sensing current through a low-side field effect transistor |
US9739846B2 (en) | 2014-10-03 | 2017-08-22 | Allegro Microsystems, Llc | Magnetic field sensors with self test |
US9720054B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US10712403B2 (en) | 2014-10-31 | 2020-07-14 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US9823092B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor providing a movement detector |
US9719806B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a ferromagnetic target object |
US9841485B2 (en) | 2014-11-14 | 2017-12-12 | Allegro Microsystems, Llc | Magnetic field sensor having calibration circuitry and techniques |
US10466298B2 (en) | 2014-11-14 | 2019-11-05 | Allegro Microsystems, Llc | Magnetic field sensor with shared path amplifier and analog-to-digital-converter |
US9804249B2 (en) | 2014-11-14 | 2017-10-31 | Allegro Microsystems, Llc | Dual-path analog to digital converter |
US9638764B2 (en) | 2015-04-08 | 2017-05-02 | Allegro Microsystems, Llc | Electronic circuit for driving a hall effect element with a current compensated for substrate stress |
US9719874B2 (en) | 2015-06-30 | 2017-08-01 | Stmicroelectronics S.R.L. | Pressure sensor device for measuring a differential normal pressure to the device and related methods |
US9704624B2 (en) | 2015-06-30 | 2017-07-11 | Stmicroelectronics S.R.L. | Integrated circuit (IC) including semiconductor resistor and resistance compensation circuit and related methods |
US9851417B2 (en) | 2015-07-28 | 2017-12-26 | Allegro Microsystems, Llc | Structure and system for simultaneous sensing a magnetic field and mechanical stress |
US10107873B2 (en) * | 2016-03-10 | 2018-10-23 | Allegro Microsystems, Llc | Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress |
US10132879B2 (en) | 2016-05-23 | 2018-11-20 | Allegro Microsystems, Llc | Gain equalization for multiple axis magnetic field sensing |
US10012518B2 (en) | 2016-06-08 | 2018-07-03 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a proximity of an object |
US10260905B2 (en) | 2016-06-08 | 2019-04-16 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors to cancel offset variations |
US10041810B2 (en) | 2016-06-08 | 2018-08-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as movement detectors |
US10162017B2 (en) | 2016-07-12 | 2018-12-25 | Allegro Microsystems, Llc | Systems and methods for reducing high order hall plate sensitivity temperature coefficients |
US10641842B2 (en) | 2017-05-26 | 2020-05-05 | Allegro Microsystems, Llc | Targets for coil actuated position sensors |
US10837943B2 (en) | 2017-05-26 | 2020-11-17 | Allegro Microsystems, Llc | Magnetic field sensor with error calculation |
US10324141B2 (en) | 2017-05-26 | 2019-06-18 | Allegro Microsystems, Llc | Packages for coil actuated position sensors |
US10310028B2 (en) | 2017-05-26 | 2019-06-04 | Allegro Microsystems, Llc | Coil actuated pressure sensor |
US11428755B2 (en) | 2017-05-26 | 2022-08-30 | Allegro Microsystems, Llc | Coil actuated sensor with sensitivity detection |
US10996289B2 (en) | 2017-05-26 | 2021-05-04 | Allegro Microsystems, Llc | Coil actuated position sensor with reflected magnetic field |
US10520559B2 (en) | 2017-08-14 | 2019-12-31 | Allegro Microsystems, Llc | Arrangements for Hall effect elements and vertical epi resistors upon a substrate |
US10866117B2 (en) | 2018-03-01 | 2020-12-15 | Allegro Microsystems, Llc | Magnetic field influence during rotation movement of magnetic target |
US11255700B2 (en) | 2018-08-06 | 2022-02-22 | Allegro Microsystems, Llc | Magnetic field sensor |
US10823586B2 (en) | 2018-12-26 | 2020-11-03 | Allegro Microsystems, Llc | Magnetic field sensor having unequally spaced magnetic field sensing elements |
US11061084B2 (en) | 2019-03-07 | 2021-07-13 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deflectable substrate |
US10955306B2 (en) | 2019-04-22 | 2021-03-23 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deformable substrate |
US11280637B2 (en) | 2019-11-14 | 2022-03-22 | Allegro Microsystems, Llc | High performance magnetic angle sensor |
US11237020B2 (en) | 2019-11-14 | 2022-02-01 | Allegro Microsystems, Llc | Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet |
US11194004B2 (en) | 2020-02-12 | 2021-12-07 | Allegro Microsystems, Llc | Diagnostic circuits and methods for sensor test circuits |
US11169223B2 (en) | 2020-03-23 | 2021-11-09 | Allegro Microsystems, Llc | Hall element signal calibrating in angle sensor |
US11262422B2 (en) | 2020-05-08 | 2022-03-01 | Allegro Microsystems, Llc | Stray-field-immune coil-activated position sensor |
US11493361B2 (en) | 2021-02-26 | 2022-11-08 | Allegro Microsystems, Llc | Stray field immune coil-activated sensor |
US11630130B2 (en) | 2021-03-31 | 2023-04-18 | Allegro Microsystems, Llc | Channel sensitivity matching |
US11578997B1 (en) | 2021-08-24 | 2023-02-14 | Allegro Microsystems, Llc | Angle sensor using eddy currents |
US11994541B2 (en) | 2022-04-15 | 2024-05-28 | Allegro Microsystems, Llc | Current sensor assemblies for low currents |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3270554A (en) * | 1961-01-04 | 1966-09-06 | Bell Telephone Labor Inc | Diffused layer transducers |
GB1249878A (en) * | 1967-10-27 | 1971-10-13 | Conrac Corp | Improvements in or relating to force transducers using piezoresistive elements |
US3965453A (en) * | 1974-12-27 | 1976-06-22 | Bell Telephone Laboratories, Incorporated | Piezoresistor effects in semiconductor resistors |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3186217A (en) * | 1960-12-02 | 1965-06-01 | Bell Telephone Labor Inc | Piezoresistive stress transducer |
US3137834A (en) * | 1961-03-17 | 1964-06-16 | Bell Telephone Labor Inc | Piezoresistive stress gages |
GB997394A (en) * | 1961-04-25 | 1965-07-07 | Western Electric Co | Improvements in and relating to piezoresistive semiconductor strain gauges |
DE1465112A1 (de) * | 1963-10-04 | 1969-01-23 | Anritsu Electric Company Ltd | Im Vakuum niedergeschlagene Halbleiterschichten fuer Elasto-Widerstandselemente |
GB1094862A (en) * | 1964-03-31 | 1967-12-13 | Ether Eng Ltd | Improvements in and relating to strain gauges |
GB1249317A (en) * | 1968-11-19 | 1971-10-13 | Mullard Ltd | Semiconductor devices |
US3641812A (en) * | 1970-05-20 | 1972-02-15 | Conrac Corp | Silicon diaphragm with integral bridge transducer |
US3705993A (en) * | 1970-07-16 | 1972-12-12 | Inst Fizica | Piezoresistive transducers and devices with semiconducting films and their manufacturing process |
US3819431A (en) * | 1971-10-05 | 1974-06-25 | Kulite Semiconductor Products | Method of making transducers employing integral protective coatings and supports |
JPS561789B2 (fr) * | 1974-04-26 | 1981-01-16 | ||
GB1472294A (en) * | 1974-12-18 | 1977-05-04 | Welwyn Electric Ltd | Strain measuring device |
-
1978
- 1978-06-29 FR FR7819524A patent/FR2396417A1/fr active Granted
- 1978-06-29 DE DE2828605A patent/DE2828605C3/de not_active Expired
- 1978-06-29 US US05/920,358 patent/US4236832A/en not_active Expired - Lifetime
- 1978-06-29 GB GB7828266A patent/GB2000639B/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3270554A (en) * | 1961-01-04 | 1966-09-06 | Bell Telephone Labor Inc | Diffused layer transducers |
GB1249878A (en) * | 1967-10-27 | 1971-10-13 | Conrac Corp | Improvements in or relating to force transducers using piezoresistive elements |
US3965453A (en) * | 1974-12-27 | 1976-06-22 | Bell Telephone Laboratories, Incorporated | Piezoresistor effects in semiconductor resistors |
Non-Patent Citations (1)
Title |
---|
EXBK/77 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2396418A1 (fr) * | 1977-06-29 | 1979-01-26 | Tokyo Shibaura Electric Co | Dispositif a semi-conducteurs integre dont les caracteristiques ne sont pas alterees par l'encapsulage |
Also Published As
Publication number | Publication date |
---|---|
FR2396417B1 (fr) | 1983-01-21 |
GB2000639B (en) | 1982-03-31 |
DE2828605B2 (de) | 1981-04-30 |
DE2828605C3 (de) | 1982-01-14 |
GB2000639A (en) | 1979-01-10 |
DE2828605A1 (de) | 1979-01-04 |
US4236832A (en) | 1980-12-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2396417A1 (fr) | Composant semi-conducteur comprenant une resistance | |
DE68910243D1 (de) | Messen des Betriebsverhaltens von integrierten Schaltungen in Chipform. | |
KR900009918A (ko) | 웨이퍼 파인 연마용 조성물 | |
DE3776931D1 (de) | Brueckenschaltkreis mit halbleiterdehnungsmessstreifen. | |
JPS5297687A (en) | Method of forming low resistance interconnection in mos nnchannel silicon gate ic | |
EP0304824A3 (en) | Thin film mos transistor having pair of gate electrodes opposing across semiconductor layer | |
FR2379134A1 (fr) | Memoire a semi-conducteurs | |
FR2373162A1 (fr) | Dispositif a semi-conducteurs | |
EP0391708A3 (fr) | Configuration de métallisation de face arrière pour dispositifs à semiconducteur | |
IT1129028B (it) | Perfezionamento nelle lappatrici adatte in particolare per la lavorazione di lastrine di semiconduttori e simili | |
JPS567479A (en) | Field-effect type semiconductor device | |
JPS56103448A (en) | Semiconductor ic device | |
FR2386224A1 (fr) | Matrice de commutation de signaux bilateraux | |
FR2396413A1 (fr) | Composant semi-conducteur a couche de resistance de conductibilite du type p | |
KR950020965A (ko) | 반도체 장치 | |
FR2363895A1 (fr) | Dispositif composite a semi-conducteurs | |
JPS5681966A (en) | Input protecting circuit for semiconductor device | |
DE69111096D1 (de) | MOS-Transistor für hohe Spannungen und dessen Herstellungsverfahren und Halbleiterbauelement mit MOS-Transistor für hohe Spannungen und dessen Herstellungsverfahren. | |
FR2389968A1 (fr) | ||
JPS5294782A (en) | Insulation gate type ic | |
IT7831187A0 (it) | Semiconduttore avente due superfici principali opposte e poli associati. | |
KR920003532A (ko) | 마스터 슬라이스 방식에 있어서의 반도체집적회로의 제조방법 | |
JPS5336184A (en) | Semiconductor integrated circuit | |
FR2382768A1 (fr) | Procede de preparation d'une surface de substrat d'un dispositif semiconducteur isoplanar | |
DE69324981D1 (de) | Erregerkreise und Methoden mit Schutzmassnahmen für Halbleiterschalter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |