KR900009918A - 웨이퍼 파인 연마용 조성물 - Google Patents

웨이퍼 파인 연마용 조성물

Info

Publication number
KR900009918A
KR900009918A KR1019890018234A KR890018234A KR900009918A KR 900009918 A KR900009918 A KR 900009918A KR 1019890018234 A KR1019890018234 A KR 1019890018234A KR 890018234 A KR890018234 A KR 890018234A KR 900009918 A KR900009918 A KR 900009918A
Authority
KR
South Korea
Prior art keywords
polishing composition
fine polishing
wafer fine
wafer
composition
Prior art date
Application number
KR1019890018234A
Other languages
English (en)
Other versions
KR0151844B1 (ko
Inventor
시게오 사사키
Original Assignee
이.아이.듀폰 드 네모스 앤드 컴퍼니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18041813&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR900009918(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 이.아이.듀폰 드 네모스 앤드 컴퍼니 filed Critical 이.아이.듀폰 드 네모스 앤드 컴퍼니
Publication of KR900009918A publication Critical patent/KR900009918A/ko
Application granted granted Critical
Publication of KR0151844B1 publication Critical patent/KR0151844B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1019890018234A 1988-12-12 1989-12-09 웨이퍼 파인 연마용 조성물 KR0151844B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63313480A JP2714411B2 (ja) 1988-12-12 1988-12-12 ウェハーのファイン研摩用組成物
JP313480 1988-12-12

Publications (2)

Publication Number Publication Date
KR900009918A true KR900009918A (ko) 1990-07-05
KR0151844B1 KR0151844B1 (ko) 1998-10-01

Family

ID=18041813

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018234A KR0151844B1 (ko) 1988-12-12 1989-12-09 웨이퍼 파인 연마용 조성물

Country Status (5)

Country Link
EP (1) EP0373501B1 (ko)
JP (1) JP2714411B2 (ko)
KR (1) KR0151844B1 (ko)
DE (1) DE68921570T2 (ko)
MY (1) MY105865A (ko)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
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JPH04355920A (ja) * 1991-01-31 1992-12-09 Shin Etsu Handotai Co Ltd 半導体素子形成用基板およびその製造方法
EP0520109B1 (en) * 1991-05-28 1995-03-29 Rodel, Inc. Low sodium, low metals silica polishing slurries
JP2894208B2 (ja) * 1994-06-02 1999-05-24 信越半導体株式会社 シリコンウェーハ研磨用研磨剤及び研磨方法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US6110396A (en) * 1996-11-27 2000-08-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
US5876490A (en) * 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
EP1102821A4 (en) * 1998-06-10 2004-05-19 Rodel Inc COMPOSITION AND METHOD FOR CMP POLISHING METAL
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP2000080350A (ja) * 1998-09-07 2000-03-21 Speedfam-Ipec Co Ltd 研磨用組成物及びそれによるポリッシング加工方法
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
EP1068928A3 (en) * 1999-02-11 2003-08-13 Applied Materials, Inc. Chemical mechanical polishing processes and components
EP1691401B1 (en) 1999-06-18 2012-06-13 Hitachi Chemical Co., Ltd. Method for polishing a substrate using CMP abrasive
JP4491857B2 (ja) * 1999-06-18 2010-06-30 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
JP4759779B2 (ja) * 1999-09-09 2011-08-31 日立化成工業株式会社 基板の研磨方法
US6350393B2 (en) * 1999-11-04 2002-02-26 Cabot Microelectronics Corporation Use of CsOH in a dielectric CMP slurry
US7070485B2 (en) 2000-02-02 2006-07-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition
KR20020086949A (ko) 2000-04-11 2002-11-20 캐보트 마이크로일렉트로닉스 코포레이션 실리콘 옥사이드의 선택적 제거를 위한 시스템
KR20030020977A (ko) 2000-08-11 2003-03-10 로델 홀딩스 인코포레이티드 금속 기판의 화학적 기계적 평탄화
US6676718B2 (en) * 2001-01-12 2004-01-13 Rodel Holdings, Inc. Polishing of semiconductor substrates
WO2004001386A2 (en) * 2002-06-25 2003-12-31 Rhodia, Inc. Grafting polymerization of guar and other polysaccharides by electron beams
JP4212861B2 (ja) * 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
JP4593064B2 (ja) 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US7553345B2 (en) 2002-12-26 2009-06-30 Kao Corporation Polishing composition
JP5204960B2 (ja) 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US20080085412A1 (en) * 2006-10-04 2008-04-10 Ortiz C Yolanda Silica-coated metal oxide sols having variable metal oxide to silica ratio
DE102006061891A1 (de) 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
US7696095B2 (en) 2007-02-23 2010-04-13 Ferro Corporation Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
JP2010028079A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333741B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333739B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333743B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010041027A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333742B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028078A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333740B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224771A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333744B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
JP2010028077A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016344A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224767A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
KR20100123678A (ko) * 2008-02-18 2010-11-24 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
JP2010034497A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5071678B2 (ja) * 2008-06-11 2012-11-14 信越化学工業株式会社 合成石英ガラス基板用研磨剤
US20100243950A1 (en) * 2008-06-11 2010-09-30 Harada Daijitsu Polishing agent for synthetic quartz glass substrate
KR20130029441A (ko) * 2009-08-19 2013-03-22 히타치가세이가부시끼가이샤 Ｃｍｐ 연마액 및 연마 방법
CN102477260B (zh) * 2010-11-26 2014-12-03 安集微电子（上海）有限公司 一种化学机械抛光液
JP6357296B2 (ja) 2012-02-10 2018-07-11 株式会社フジミインコーポレーテッド 研磨用組成物、及び半導体基板の製造方法
CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子（上海）有限公司 一种碱性化学机械抛光液
JP5460827B2 (ja) * 2012-11-14 2014-04-02 株式会社フジミインコーポレーテッド シリコンウエハの製造方法
JP5656960B2 (ja) * 2012-11-14 2015-01-21 株式会社フジミインコーポレーテッド Ｌｐｄ低減剤及びそれを用いたシリコンウエハの欠陥低減方法
JP6086725B2 (ja) * 2012-12-28 2017-03-01 花王株式会社 シリコンウェーハ用研磨液組成物
JP6423279B2 (ja) * 2015-02-10 2018-11-14 株式会社フジミインコーポレーテッド 研磨用組成物
JP6722026B2 (ja) * 2016-04-01 2020-07-15 デンカ株式会社 研磨用シリカ及びそれを用いた方法
CN105819559B (zh) * 2016-04-22 2018-07-31 日照澳可生生物科技有限公司 一种用于废水处理的絮凝剂及其制备方法
KR20210031454A (ko) 2018-07-04 2021-03-19 스미토모 세이카 가부시키가이샤 연마용 조성물
EP3819353A4 (en) 2018-07-04 2022-03-30 Sumitomo Seika Chemicals Co., Ltd. POLISHING COMPOSITION
EP3929155A4 (en) * 2019-02-21 2022-04-06 Mitsubishi Chemical Corporation SILICA PARTICLES AND METHOD FOR PRODUCTION THEREOF, SILICA SOL, POLISHING COMPOSITION, POLISHING METHOD, SEMICONDUCTOR WAFER PRODUCTION METHOD AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
CN115466573B (zh) * 2022-09-05 2024-02-20 广州飞雪芯材有限公司 一种用于单晶硅晶圆片的抛光液及其应用

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US4260396A (en) * 1978-01-16 1981-04-07 W. R. Grace & Co. Compositions for polishing silicon and germanium
US4581042A (en) * 1984-06-22 1986-04-08 Pro-Strength, Inc. Composition for removing hard-water build-up
EP0322721B1 (en) * 1987-12-29 1993-10-06 E.I. Du Pont De Nemours And Company Fine polishing composition for wafers

Also Published As

Publication number Publication date
KR0151844B1 (ko) 1998-10-01
MY105865A (en) 1995-02-28
EP0373501A2 (en) 1990-06-20
EP0373501B1 (en) 1995-03-08
DE68921570D1 (de) 1995-04-13
JPH02158684A (ja) 1990-06-19
DE68921570T2 (de) 1995-10-12
EP0373501A3 (en) 1992-01-22
JP2714411B2 (ja) 1998-02-16

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