DE68927357D1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE68927357D1
DE68927357D1 DE68927357T DE68927357T DE68927357D1 DE 68927357 D1 DE68927357 D1 DE 68927357D1 DE 68927357 T DE68927357 T DE 68927357T DE 68927357 T DE68927357 T DE 68927357T DE 68927357 D1 DE68927357 D1 DE 68927357D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68927357T
Other languages
English (en)
Other versions
DE68927357T2 (de
Inventor
Toshitaka Senuma
Futao Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE68927357D1 publication Critical patent/DE68927357D1/de
Application granted granted Critical
Publication of DE68927357T2 publication Critical patent/DE68927357T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Processing Of Color Television Signals (AREA)
  • Amplifiers (AREA)
  • Filters That Use Time-Delay Elements (AREA)
DE68927357T 1988-01-22 1989-01-20 Halbleiteranordnung Expired - Lifetime DE68927357T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1210788 1988-01-22
JP63132103A JP2623692B2 (ja) 1988-01-22 1988-05-30 半導体回路装置
PCT/JP1989/000050 WO1989006862A1 (fr) 1988-01-22 1989-01-20 Dispositif a semi-conducteur

Publications (2)

Publication Number Publication Date
DE68927357D1 true DE68927357D1 (de) 1996-11-28
DE68927357T2 DE68927357T2 (de) 1997-02-27

Family

ID=26347674

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68927357T Expired - Lifetime DE68927357T2 (de) 1988-01-22 1989-01-20 Halbleiteranordnung

Country Status (6)

Country Link
US (1) US5124761A (de)
EP (1) EP0353308B1 (de)
JP (1) JP2623692B2 (de)
KR (1) KR0132717B1 (de)
DE (1) DE68927357T2 (de)
WO (1) WO1989006862A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1252623B (it) * 1991-12-05 1995-06-19 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente almeno un transistor di potenza e almeno un circuito di comando, con circuito di isolamento dinamico,integrati in maniera monolitica nella stessa piastrina
JPH08139273A (ja) * 1994-11-14 1996-05-31 Sony Corp 半導体集積回路および半導体装置
US6324558B1 (en) * 1995-02-14 2001-11-27 Scott A. Wilber Random number generator and generation method
KR100232222B1 (ko) * 1996-12-26 1999-12-01 김영환 반도체 소자의 커패시터
US20140110777A1 (en) 2012-10-18 2014-04-24 United Microelectronics Corp. Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof
KR101868063B1 (ko) * 2017-10-17 2018-07-19 주식회사 퍼스트전자 엘이디 소자의 서지에 의한 파손을 방지하는 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524264B2 (de) * 1972-02-08 1980-06-27
GB1521955A (en) * 1976-03-16 1978-08-23 Tokyo Shibaura Electric Co Semiconductor memory device
US4214252A (en) * 1977-08-06 1980-07-22 U.S. Philips Corporation Semiconductor device having a MOS-capacitor
US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
JPS5543812A (en) * 1978-09-22 1980-03-27 Hitachi Ltd Capacitor
JPS60170964A (ja) * 1984-02-15 1985-09-04 Rohm Co Ltd 容量素子
JPS6124824A (ja) * 1984-07-16 1986-02-03 Honda Motor Co Ltd シヤフトドライブ機構のシ−ル構造
US4672403A (en) * 1985-09-23 1987-06-09 National Semiconductor Corporation Lateral subsurface zener diode
JPS6292458A (ja) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd 半導体容量結合素子
JPS6292459A (ja) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd 半導体容量結合素子
JPS62142342A (ja) * 1985-12-17 1987-06-25 Mitsubishi Electric Corp 半導体装置の製造方法
JPS63155680A (ja) * 1986-12-18 1988-06-28 Nec Corp 半導体装置
JP3282280B2 (ja) * 1993-04-08 2002-05-13 井関農機株式会社 接木ロボット

Also Published As

Publication number Publication date
KR0132717B1 (ko) 1998-04-16
DE68927357T2 (de) 1997-02-27
EP0353308B1 (de) 1996-10-23
EP0353308A1 (de) 1990-02-07
US5124761A (en) 1992-06-23
EP0353308A4 (en) 1992-06-10
JPH01309363A (ja) 1989-12-13
WO1989006862A1 (fr) 1989-07-27
JP2623692B2 (ja) 1997-06-25
KR900701044A (ko) 1990-08-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition