KR900008521A - 반도체 기억장치 - Google Patents
반도체 기억장치Info
- Publication number
- KR900008521A KR900008521A KR1019890016607A KR890016607A KR900008521A KR 900008521 A KR900008521 A KR 900008521A KR 1019890016607 A KR1019890016607 A KR 1019890016607A KR 890016607 A KR890016607 A KR 890016607A KR 900008521 A KR900008521 A KR 900008521A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63289259A JPH07109878B2 (ja) | 1988-11-16 | 1988-11-16 | 半導体記憶装置 |
JP63-289259 | 1988-11-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900008521A true KR900008521A (ko) | 1990-06-03 |
KR930000766B1 KR930000766B1 (ko) | 1993-02-01 |
Family
ID=17740841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890016607A KR930000766B1 (ko) | 1988-11-16 | 1989-11-16 | 반도체 기억장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4941031A (ko) |
EP (1) | EP0369183B1 (ko) |
JP (1) | JPH07109878B2 (ko) |
KR (1) | KR930000766B1 (ko) |
DE (1) | DE68915395T2 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5194752A (en) * | 1989-05-23 | 1993-03-16 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
JP2953708B2 (ja) * | 1989-07-31 | 1999-09-27 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
JPH0713864B2 (ja) * | 1989-09-27 | 1995-02-15 | 東芝マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
EP0496406B1 (en) * | 1991-01-25 | 1999-05-06 | Nec Corporation | Semiconductor memory apparatus |
US5639690A (en) * | 1991-03-12 | 1997-06-17 | Oki Electric Industry Co., Ltd. | Method for manufacturing a conductive pattern structure for a semiconductor device |
JPH0669208A (ja) * | 1991-03-12 | 1994-03-11 | Oki Electric Ind Co Ltd | 半導体装置 |
US5170243A (en) * | 1991-11-04 | 1992-12-08 | International Business Machines Corporation | Bit line configuration for semiconductor memory |
EP0713251B1 (en) * | 1992-11-18 | 1999-01-07 | Fuji Electric Co. Ltd. | Semiconductor conversion device |
KR100298871B1 (ko) * | 1993-06-02 | 2001-11-22 | 김영환 | 반도체 메모리 장치의 비트라인 구조 |
US5485419A (en) * | 1994-05-23 | 1996-01-16 | Campbell; John P. | Memory device column address selection lead layout |
US5670815A (en) * | 1994-07-05 | 1997-09-23 | Motorola, Inc. | Layout for noise reduction on a reference voltage |
US5636158A (en) * | 1995-03-13 | 1997-06-03 | Kabushiki Kaisha Toshiba | Irregular pitch layout for a semiconductor memory device |
US5899706A (en) * | 1997-06-30 | 1999-05-04 | Siemens Aktiengesellschaft | Method of reducing loading variation during etch processing |
JP2000216264A (ja) * | 1999-01-22 | 2000-08-04 | Mitsubishi Electric Corp | Cmos論理回路素子、半導体装置とその製造方法およびその製造方法において用いる半導体回路設計方法 |
JP2002190532A (ja) * | 2000-12-19 | 2002-07-05 | Hitachi Ltd | 半導体記憶装置 |
JP2008004889A (ja) * | 2006-06-26 | 2008-01-10 | Samsung Electronics Co Ltd | 半導体記憶装置 |
JP2008227171A (ja) * | 2007-03-13 | 2008-09-25 | Toshiba Corp | 不揮発性半導体メモリ |
US7948094B2 (en) * | 2007-10-22 | 2011-05-24 | Rohm Co., Ltd. | Semiconductor device |
KR102635666B1 (ko) * | 2018-08-16 | 2024-02-14 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5349969A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Semiconductor memory unit |
US4319342A (en) * | 1979-12-26 | 1982-03-09 | International Business Machines Corporation | One device field effect transistor (FET) AC stable random access memory (RAM) array |
JPS5772348A (en) * | 1980-10-24 | 1982-05-06 | Nec Corp | Wiring structure in integrated circuit |
JPS59231852A (ja) * | 1983-06-15 | 1984-12-26 | Hitachi Ltd | 半導体装置 |
JPH0714006B2 (ja) * | 1985-05-29 | 1995-02-15 | 株式会社東芝 | ダイナミツク型メモリ |
JPS6211262A (ja) * | 1985-07-08 | 1987-01-20 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JPS6265300A (ja) * | 1985-09-18 | 1987-03-24 | Toshiba Corp | 半導体記憶装置 |
JPS6276761A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 半導体装置 |
JPH0766659B2 (ja) * | 1986-01-30 | 1995-07-19 | 三菱電機株式会社 | 半導体記憶装置 |
JPS6367771A (ja) * | 1986-09-09 | 1988-03-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS63183691A (ja) * | 1987-01-26 | 1988-07-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
1988
- 1988-11-16 JP JP63289259A patent/JPH07109878B2/ja not_active Expired - Fee Related
-
1989
- 1989-10-03 US US07/416,604 patent/US4941031A/en not_active Expired - Lifetime
- 1989-10-19 DE DE68915395T patent/DE68915395T2/de not_active Expired - Fee Related
- 1989-10-19 EP EP89119421A patent/EP0369183B1/en not_active Expired - Lifetime
- 1989-11-16 KR KR1019890016607A patent/KR930000766B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0369183B1 (en) | 1994-05-18 |
US4941031A (en) | 1990-07-10 |
KR930000766B1 (ko) | 1993-02-01 |
DE68915395T2 (de) | 1994-10-06 |
DE68915395D1 (de) | 1994-06-23 |
JPH07109878B2 (ja) | 1995-11-22 |
JPH02134868A (ja) | 1990-05-23 |
EP0369183A3 (en) | 1991-01-23 |
EP0369183A2 (en) | 1990-05-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030130 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |