KR900011017A - 반도체장치 - Google Patents

반도체장치

Info

Publication number
KR900011017A
KR900011017A KR1019890017748A KR890017748A KR900011017A KR 900011017 A KR900011017 A KR 900011017A KR 1019890017748 A KR1019890017748 A KR 1019890017748A KR 890017748 A KR890017748 A KR 890017748A KR 900011017 A KR900011017 A KR 900011017A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
KR1019890017748A
Other languages
English (en)
Other versions
KR920010677B1 (ko
Inventor
나오마사 스기타
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900011017A publication Critical patent/KR900011017A/ko
Application granted granted Critical
Publication of KR920010677B1 publication Critical patent/KR920010677B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
KR1019890017748A 1988-12-02 1989-12-01 반도체장치 KR920010677B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-305767 1988-12-02
JP63305767A JP2667477B2 (ja) 1988-12-02 1988-12-02 ショットキーバリアダイオード

Publications (2)

Publication Number Publication Date
KR900011017A true KR900011017A (ko) 1990-07-11
KR920010677B1 KR920010677B1 (ko) 1992-12-12

Family

ID=17949103

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890017748A KR920010677B1 (ko) 1988-12-02 1989-12-01 반도체장치

Country Status (5)

Country Link
US (1) US5017976A (ko)
EP (1) EP0372428B1 (ko)
JP (1) JP2667477B2 (ko)
KR (1) KR920010677B1 (ko)
DE (1) DE68918062T2 (ko)

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JPH065736B2 (ja) * 1989-12-15 1994-01-19 株式会社東芝 ショットキー・ダイオード
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US5345100A (en) * 1991-03-29 1994-09-06 Shindengen Electric Manufacturing Co., Ltd. Semiconductor rectifier having high breakdown voltage and high speed operation
US5262669A (en) * 1991-04-19 1993-11-16 Shindengen Electric Manufacturing Co., Ltd. Semiconductor rectifier having high breakdown voltage and high speed operation
JPH058952U (ja) * 1991-07-15 1993-02-05 日本インター株式会社 シヨツトキバリアダイオード
JP2809253B2 (ja) * 1992-10-02 1998-10-08 富士電機株式会社 注入制御型ショットキーバリア整流素子
JP3602242B2 (ja) * 1996-02-14 2004-12-15 株式会社ルネサステクノロジ 半導体装置
JP3779366B2 (ja) * 1996-02-21 2006-05-24 株式会社東芝 半導体装置及びその製造方法
DE19723176C1 (de) * 1997-06-03 1998-08-27 Daimler Benz Ag Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
US6362495B1 (en) 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes
WO2000074130A1 (en) * 1999-05-28 2000-12-07 Advanced Power Devices, Inc. Discrete schottky diode device with reduced leakage current
US6717229B2 (en) 2000-01-19 2004-04-06 Fabtech, Inc. Distributed reverse surge guard
WO2001054197A1 (en) * 2000-01-19 2001-07-26 Fabtech, Inc. Distributed reverse surge guard
EP1119055A1 (en) * 2000-01-19 2001-07-25 Fabtech, Inc. Distributed reverse surge guard
US6486524B1 (en) * 2000-02-22 2002-11-26 International Rectifier Corporation Ultra low Irr fast recovery diode
US6699775B2 (en) * 2000-02-22 2004-03-02 International Rectifier Corporation Manufacturing process for fast recovery diode
US6525389B1 (en) * 2000-02-22 2003-02-25 International Rectifier Corporation High voltage termination with amorphous silicon layer below the field plate
DE10015884A1 (de) * 2000-03-30 2001-10-11 Philips Corp Intellectual Pty Schottky-Diode
JP3860705B2 (ja) 2000-03-31 2006-12-20 新電元工業株式会社 半導体装置
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
SE0101848D0 (sv) * 2001-05-25 2001-05-25 Abb Research Ltd A method concerning a junction barrier Schottky diode, such a diode and use thereof
JP4810776B2 (ja) * 2001-08-03 2011-11-09 富士電機株式会社 半導体装置
GB0120595D0 (en) * 2001-08-24 2001-10-17 Koninkl Philips Electronics Nv A semiconductor rectifier
JP2003068760A (ja) * 2001-08-29 2003-03-07 Denso Corp 炭化珪素半導体装置およびその製造方法
EP1341238B1 (en) * 2002-02-20 2012-09-05 Shindengen Electric Manufacturing Co., Ltd. Diode device and transistor device
JP2005191227A (ja) * 2003-12-25 2005-07-14 Sanyo Electric Co Ltd 半導体装置
JP4610207B2 (ja) * 2004-02-24 2011-01-12 三洋電機株式会社 半導体装置およびその製造方法
KR100621370B1 (ko) * 2004-06-08 2006-09-08 삼성전자주식회사 쇼트키 다이오드를 포함한 집적회로구조물 및 그 제조방법
US7436022B2 (en) * 2005-02-11 2008-10-14 Alpha & Omega Semiconductors, Ltd. Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
JP4902996B2 (ja) * 2006-01-12 2012-03-21 新電元工業株式会社 樹脂封止型ダイオード及び倍電圧整流回路
JP2007281231A (ja) * 2006-04-07 2007-10-25 Shindengen Electric Mfg Co Ltd 半導体装置
GB0611594D0 (en) * 2006-06-13 2006-07-19 Taylor Gareth A Electrical switching device and method of embedding catalytic material in a diamond substrate
US8384181B2 (en) 2007-02-09 2013-02-26 Cree, Inc. Schottky diode structure with silicon mesa and junction barrier Schottky wells
JP4396724B2 (ja) * 2007-04-18 2010-01-13 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置
US8368166B2 (en) * 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
TW200847448A (en) * 2007-05-30 2008-12-01 Intersil Inc Junction barrier schottky diode
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
JP4333782B2 (ja) * 2007-07-05 2009-09-16 株式会社デンソー ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置
JP5368722B2 (ja) * 2008-03-28 2013-12-18 新電元工業株式会社 半導体装置
JP5169428B2 (ja) * 2008-04-17 2013-03-27 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US7897471B2 (en) * 2008-06-19 2011-03-01 Fairchild Semiconductor Corporation Method and apparatus to improve the reliability of the breakdown voltage in high voltage devices
US7750412B2 (en) * 2008-08-06 2010-07-06 Fairchild Semiconductor Corporation Rectifier with PN clamp regions under trenches
JP5358141B2 (ja) * 2008-08-12 2013-12-04 新電元工業株式会社 半導体装置
TW201034205A (en) * 2009-03-04 2010-09-16 Actron Technology Corp Rectifier used in high temperature application
DE102009018971A1 (de) * 2009-04-25 2010-11-04 Secos Halbleitertechnologie Gmbh Konstruktion einer Schottkydiode mit verbessertem Hochstromverhalten und Verfahren zu deren Herstellung
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
JP5269015B2 (ja) * 2010-09-08 2013-08-21 株式会社東芝 半導体装置及び半導体装置の製造方法
WO2012081664A1 (ja) * 2010-12-17 2012-06-21 富士電機株式会社 半導体装置およびその製造方法
JP5306392B2 (ja) * 2011-03-03 2013-10-02 株式会社東芝 半導体整流装置
US8937319B2 (en) * 2011-03-07 2015-01-20 Shindengen Electric Manufacturing Co., Ltd. Schottky barrier diode
JP5512581B2 (ja) 2011-03-24 2014-06-04 株式会社東芝 半導体装置
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
JP6028676B2 (ja) 2013-05-21 2016-11-16 住友電気工業株式会社 炭化珪素半導体装置
US9029974B2 (en) * 2013-09-11 2015-05-12 Infineon Technologies Ag Semiconductor device, junction field effect transistor and vertical field effect transistor
JP2015216200A (ja) * 2014-05-09 2015-12-03 株式会社豊田中央研究所 半導体装置
US20160035899A1 (en) * 2014-07-30 2016-02-04 Qualcomm Incorporated Biasing a silicon-on-insulator (soi) substrate to enhance a depletion region
EP3067935A1 (en) * 2015-03-10 2016-09-14 ABB Technology AG Power semiconductor rectifier with controllable on-state voltage
DE102016013542A1 (de) * 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH Stapelförmige Schottky-Diode
US10147785B2 (en) 2017-01-26 2018-12-04 Semiconductor Components Industries, Llc High-voltage superjunction field effect transistor

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US3982264A (en) * 1973-04-25 1976-09-21 Sony Corporation Junction gated field effect transistor
JPS5935183B2 (ja) * 1975-08-20 1984-08-27 サンケイ電気 （株） シヨツトキバリア半導体装置
GB1558506A (en) * 1976-08-09 1980-01-03 Mullard Ltd Semiconductor devices having a rectifying metalto-semicondductor junction
JPS5637683A (en) * 1979-09-04 1981-04-11 Nippon Telegr & Teleph Corp <Ntt> Semiconductor rectifying device
JPS5635473A (en) * 1979-08-29 1981-04-08 Nippon Telegr & Teleph Corp <Ntt> P-n junction type rectifying diode
US4796069A (en) * 1981-05-13 1989-01-03 International Business Machines Corporation Schottky diode having limited area self-aligned guard ring and method for making same
JPS5929469A (ja) * 1982-08-11 1984-02-16 Hitachi Ltd 半導体装置
JPS5936264A (ja) * 1982-08-25 1984-02-28 Canon Inc 複写機
JPS59143370A (ja) * 1983-02-04 1984-08-16 Hitachi Ltd 半導体整流装置
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
USH40H (en) * 1984-07-18 1986-04-01 At&T Bell Laboratories Field shields for Schottky barrier devices
GB2176339A (en) * 1985-06-10 1986-12-17 Philips Electronic Associated Semiconductor device with schottky junctions

Also Published As

Publication number Publication date
KR920010677B1 (ko) 1992-12-12
DE68918062D1 (de) 1994-10-13
JP2667477B2 (ja) 1997-10-27
JPH02151067A (ja) 1990-06-11
DE68918062T2 (de) 1995-03-02
US5017976A (en) 1991-05-21
EP0372428B1 (en) 1994-09-07
EP0372428A1 (en) 1990-06-13

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Legal Events

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A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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Payment date: 20051130

Year of fee payment: 14

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