JP4396724B2 - ショットキーバリアダイオードを備えた炭化珪素半導体装置 - Google Patents
ショットキーバリアダイオードを備えた炭化珪素半導体装置 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 41
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 41
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 230000004888 barrier function Effects 0.000 title claims description 9
- 239000010410 layer Substances 0.000 claims description 148
- 230000002093 peripheral effect Effects 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- 239000002344 surface layer Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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Description
本発明の第1実施形態について説明する。図1に、本実施形態にかかるSiC半導体装置の断面図を示す。また、図2に、図1に示すSiC半導体装置の上面レイアウト図を示す。図1は、図2のA−A断面に相当する断面図である。以下、これらを参照して、本実施形態のSiC半導体装置について説明する。
本発明の第2実施形態について説明する。図4は、本実施形態にかかるSBD10を備えたSiC半導体装置の上面レイアウト図である。この図のB−B断面が図1に相当する。本実施形態のSiC半導体装置は、第1実施形態に対してSBDおよび終端構造のレイアウト構成を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。図5は、本実施形態にかかるSBD10を備えたSiC半導体装置の上面レイアウト図である。この図のC−C断面がほぼ図1と一致する。本実施形態のSiC半導体装置は、第1実施形態に対してSBDおよび終端構造のレイアウト構成を変更したものであり、その他に関しては第1実施形態と同様であるため、異なる部分についてのみ説明する。
上記各実施形態では、各図においてp型層8の数の一例を示したが、これに限るものではない。また、第2実施形態において、p型リサーフ層6の内側の端部の形状やp型層8の形状として、角の丸めた正方形を例に挙げて説明したが、その他の角を丸めた正多角形としても構わない。
Claims (4)
- 主表面(1a)および裏面(1b)を有し、第1導電型の炭化珪素からなる基板(1)と、
前記基板(1)の前記主表面(1a)上に形成され、前記基板(1)よりも低不純物濃度とされた第1導電型の炭化珪素からなるドリフト層(2)と、
前記ドリフト層(2)の上に配置され、該ドリフト層(2)におけるセル部に開口部(3a)が形成された絶縁膜(3)と、
前記セル部に形成され、前記絶縁膜(3)の開口部(3a)を通じて、前記ドリフト層(2)の表面とショットキー接触するように形成されたショットキー電極(4)と、前記基板(1)の裏面(1b)に形成されたオーミック電極(5)とを備えてなるショットキーバリアダイオード(10)と、
前記セル部の外周領域に形成され、前記ドリフト層(2)の表層部において、前記セル部を囲むように形成された第2導電型のリサーフ層(6)を含む終端構造と、
前記リサーフ層(6)の内側となる前記ショットキー電極(4)のうち前記ドリフト層(2)と接する領域の下方に、前記ドリフト層(2)の表面において前記ショットキー電極(4)と接続されるように形成され、かつ、互いに離間して配置された複数の第2導電型層(8)とを備え、
前記複数の第2導電型層(8)は、前記ショットキー電極(4)のうち前記ドリフト層(2)と接する領域の中心に位置する中心部(8a)と、該中心部(8a)を中心として囲むように配置されていると共に該中心部(8a)を中心として点対称とされた複数の環状部(8b〜8e)とを有し、前記複数の環状部(8b〜8e)の最も前記中心部(8a)の外周側に配置されるものを外周部(8e)とすると、前記中心部(8a)を中心として径方向に切断した断面において、前記複数の環状部(8b〜8e)のうち前記中心部(8a)と前記外周部(8e)の間に位置する内周部(8b〜8d)が、前記中心部(8a)と前記外周部(8e)の間で対称となる形状とされ、
前記複数の第2導電型層(8)は、前記中心部(8a)を中心とした同心円状に並べられていて、互いに等しい間隔(W1)空けて配置されていると共に、前記複数の環状部(8b〜8e)が前記中心部(8a)を中心として径方向の幅(W2)が等しくされており、前記間隔(W1)が2.0±0.5μm、前記幅(W2)が1.5±0.5μmとされ、
前記外周部(8e)を含めた前記複数の第2導電型層(8)と前記リサーフ層(6)とは第2導電型不純物の濃度が異なっており、前記外周部(8e)は前記リサーフ層(6)の内側の端部と接触もしくは前記リサーフ層(6)の内部に含まれることを特徴とするショットキーバリアダイオードを備えた炭化珪素半導体装置。 - 前記外周部(8e)を含めた前記複数の第2導電型層(8)は、第2導電型不純物の濃度が5×10 17 〜1×10 20 cm -3 とされ、
前記リサーフ層(6)は、第2導電型不純物の濃度が5×1016〜1×1018cm-3とされていることを特徴とする請求項1に記載のショットキーバリアダイオードを備えた炭化珪素半導体装置。 - 前記複数の第2導電型層(8)は、第2導電型不純物の濃度が5×1017〜1×1020cm-3とされていることを特徴とする請求項1または2に記載のショットキーバリアダイオードを備えた炭化珪素半導体装置。
- 前記複数の第2導電型層(8)は、前記ドリフト層(2)の表面側に近づくほど高濃度とされていることを特徴とする請求項1ないし3のいずれか1つに記載のショットキーバリアダイオードを備えた炭化珪素半導体装置。
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JP2007109224A JP4396724B2 (ja) | 2007-04-18 | 2007-04-18 | ショットキーバリアダイオードを備えた炭化珪素半導体装置 |
US12/076,874 US7838888B2 (en) | 2007-04-18 | 2008-03-25 | Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same |
DE102008019370.4A DE102008019370B4 (de) | 2007-04-18 | 2008-04-17 | SiC-Halbleitervorrichtung mit Schottky-Sperrschichtdiode |
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JP2007109224A JP4396724B2 (ja) | 2007-04-18 | 2007-04-18 | ショットキーバリアダイオードを備えた炭化珪素半導体装置 |
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JP4396724B2 true JP4396724B2 (ja) | 2010-01-13 |
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JP4356767B2 (ja) * | 2007-05-10 | 2009-11-04 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
JP4420062B2 (ja) | 2007-05-10 | 2010-02-24 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
JP4333782B2 (ja) * | 2007-07-05 | 2009-09-16 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
JP5056658B2 (ja) * | 2008-08-04 | 2012-10-24 | 住友電気工業株式会社 | ガードリング構造,その形成方法および半導体デバイス |
JP5546759B2 (ja) * | 2008-08-05 | 2014-07-09 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
JP4844605B2 (ja) * | 2008-09-10 | 2011-12-28 | ソニー株式会社 | 半導体装置 |
JP5224289B2 (ja) | 2009-05-12 | 2013-07-03 | 三菱電機株式会社 | 半導体装置 |
US8319309B2 (en) * | 2009-08-28 | 2012-11-27 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor device and method for manufacturing of the same |
JP5598015B2 (ja) * | 2010-02-23 | 2014-10-01 | 株式会社デンソー | ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 |
US8890293B2 (en) * | 2011-12-16 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Guard ring for through vias |
US20130277711A1 (en) * | 2012-04-18 | 2013-10-24 | International Rectifier Corporation | Oscillation Free Fast-Recovery Diode |
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JP6029397B2 (ja) | 2012-09-14 | 2016-11-24 | 三菱電機株式会社 | 炭化珪素半導体装置 |
CN103681317A (zh) * | 2012-09-18 | 2014-03-26 | 桂林斯壮微电子有限责任公司 | 制作掩埋pn结势垒肖特基二极管的方法 |
CN103887327A (zh) * | 2013-11-29 | 2014-06-25 | 杭州恩能科技有限公司 | 一种半导体装置终端可靠性加固技术 |
CN104009099B (zh) * | 2014-05-13 | 2018-01-09 | 株洲南车时代电气股份有限公司 | 结势垒肖特基二极管及其制造方法 |
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JP2667477B2 (ja) * | 1988-12-02 | 1997-10-27 | 株式会社東芝 | ショットキーバリアダイオード |
DE19723176C1 (de) * | 1997-06-03 | 1998-08-27 | Daimler Benz Ag | Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung |
JP4006879B2 (ja) | 1999-04-07 | 2007-11-14 | 富士電機ホールディングス株式会社 | ショットキーバリアダイオードおよびその製造方法 |
JP2003158259A (ja) | 2001-09-07 | 2003-05-30 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4314277B2 (ja) * | 2007-01-11 | 2009-08-12 | 株式会社東芝 | SiCショットキー障壁半導体装置 |
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2007
- 2007-04-18 JP JP2007109224A patent/JP4396724B2/ja not_active Expired - Fee Related
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2008
- 2008-03-25 US US12/076,874 patent/US7838888B2/en not_active Expired - Fee Related
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US20080258153A1 (en) | 2008-10-23 |
US7838888B2 (en) | 2010-11-23 |
DE102008019370A1 (de) | 2008-10-23 |
DE102008019370B4 (de) | 2020-02-06 |
JP2008270413A (ja) | 2008-11-06 |
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