JP6554614B1 - ワイドギャップ半導体装置 - Google Patents
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- JP6554614B1 JP6554614B1 JP2018541241A JP2018541241A JP6554614B1 JP 6554614 B1 JP6554614 B1 JP 6554614B1 JP 2018541241 A JP2018541241 A JP 2018541241A JP 2018541241 A JP2018541241 A JP 2018541241A JP 6554614 B1 JP6554614 B1 JP 6554614B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 215
- 229920005591 polysilicon Polymers 0.000 claims abstract description 215
- 239000010410 layer Substances 0.000 claims abstract description 198
- 239000011229 interlayer Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 239000000758 substrate Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
Description
本発明によるワイドギャップ半導体装置は、
第1導電型のワイドギャップ半導体材料を用いたドリフト層と、
前記ドリフト層に設けられた第2導電型からなるウェル領域と、
前記ウェル領域に設けられたポリシリコン層と、
前記ポリシリコン層に設けられた層間絶縁膜と、
前記層間絶縁膜に設けられたゲートパッドと、
前記ポリシリコン層に電気的に接続されたソースパッドと、
を備えてもよい。
本発明の概念1によるワイドギャップ半導体装置において、
前記ポリシリコン層と前記ウェル領域はショットキー接触してもよい。
本発明の概念1によるワイドギャップ半導体装置において、
前記ポリシリコン層と前記ウェル領域はオーミック接触してもよい。
本発明の概念1乃至3のいずれか1つによるワイドギャップ半導体装置において、
前記ポリシリコン層は、前記ウェル領域に設けられた低ドープドポリシリコン層と、前記低ドープドポリシリコン層に設けられ、前記低ドープドポリシリコンにおける不純物濃度よりも高い不純物濃度を有する高ドープドポリシリコン層とを有してもよい。
本発明の概念1乃至3のいずれか1つによるワイドギャップ半導体装置において、
前記ポリシリコン層は、前記ウェル領域に設けられたアンドープドポリシリコン層と、前記アンドープドポリシリコン層に設けられたドープドポリシリコン層とを有してもよい。
本発明の概念1乃至5のいずれか1つによるワイドギャップ半導体装置において、
前記ウェル領域と前記ポリシリコン層との間に設けられたフィールド絶縁膜をさらに備えてもよい。
本発明の概念1乃至6のいずれか1つによるワイドギャップ半導体装置は、
前記ポリシリコン層を構成するポリシリコンからなるゲート電極をさらに備えてもよい。
本発明の概念1乃至7のいずれか1つによるワイドギャップ半導体装置において、
前記ウェル領域にソース領域が設けられ、
前記ウェル領域のうち、前記ソース領域に隣接して前記ソースパッドに電気的に接続される領域は、超高濃度第2導電型領域からなってもよい。
《構成》
本実施の形態では、一例として縦型のMOSFETを用いて説明する。本実施の形態では、第1導電型をn型、第2導電型をp型として説明するが、このような態様に限られることはなく、第1導電型をp型、第2導電型をn型としてもよい。また、本実施の形態では、ワイドギャップ半導体として炭化ケイ素を用いて説明するが、このような態様に限られることはなく、ワイドギャップ半導体として窒化ガリウム等を用いてもよい。本実施の形態では、図1の上下方向(ワイドギャップ半導体装置の厚み方向)を上下方向と呼び、上下方向に直交する方向を面方向と呼ぶ。
次に、上述した構成からなる本実施の形態による作用・効果の一例について説明する。なお、「作用・効果」で説明するあらゆる態様を、上記構成で採用することができる。
次に、本発明の第2の実施の形態について説明する。
次に、本発明の第3の実施の形態について説明する。
次に、本発明の第4の実施の形態について説明する。
20 ウェル領域
62 フィールド絶縁膜
65 層間絶縁
110 ソースパッド
120 ゲートパッド
150 ポリシリコン層
151 アンドープドポリシリコン層
152 ドープドポリシリコン層
153 低ドープドポリシリコン層
154 高ドープドポリシリコン層
Claims (7)
- 第1導電型のワイドギャップ半導体材料を用いたドリフト層と、
前記ドリフト層に設けられた第2導電型からなるウェル領域と、
前記ウェル領域に設けられたポリシリコン層と、
前記ポリシリコン層に設けられた層間絶縁膜と、
前記層間絶縁膜に設けられたゲートパッドと、
前記ポリシリコン層に電気的に接続されたソースパッドと、
を備え、
前記ポリシリコン層と前記ウェル領域はオーミック接触することを特徴とするワイドギャップ半導体装置。 - 第1導電型のワイドギャップ半導体材料を用いたドリフト層と、
前記ドリフト層に設けられた第2導電型からなるウェル領域と、
前記ウェル領域に設けられたポリシリコン層と、
前記ポリシリコン層に設けられた層間絶縁膜と、
前記層間絶縁膜に設けられたゲートパッドと、
前記ポリシリコン層に電気的に接続されたソースパッドと、
前記ウェル領域と前記ポリシリコン層との間に設けられたフィールド絶縁膜と、
を備えたことを特徴とするワイドギャップ半導体装置。 - 第1導電型のワイドギャップ半導体材料を用いたドリフト層と、
前記ドリフト層に設けられた第2導電型からなるウェル領域と、
前記ウェル領域に設けられたポリシリコン層と、
前記ポリシリコン層に設けられた層間絶縁膜と、
前記層間絶縁膜に設けられたゲートパッドと、
前記ポリシリコン層に電気的に接続されたソースパッドと、
前記ポリシリコン層を構成するポリシリコンからなるゲート電極と、
を備えたことを特徴とするワイドギャップ半導体装置。 - 前記ポリシリコン層と前記ウェル領域はショットキー接触することを特徴とする請求項2又は3のいずれかに記載のワイドギャップ半導体装置。
- 前記ポリシリコン層は、前記ウェル領域に設けられた低ドープドポリシリコン層と、前記低ドープドポリシリコン層に設けられ、前記低ドープドポリシリコンにおける不純物濃度よりも高い不純物濃度を有する高ドープドポリシリコン層とを有していることを特徴とする請求項1乃至3のいずれか1項に記載のワイドギャップ半導体装置。
- 前記ポリシリコン層は、前記ウェル領域に設けられたアンドープドポリシリコン層と、前記アンドープドポリシリコン層に設けられたドープドポリシリコン層とを有していることを特徴とする請求項1乃至3のいずれか1項に記載のワイドギャップ半導体装置。
- 前記ウェル領域にソース領域が設けられ、
前記ウェル領域のうち、前記ソース領域に隣接して前記ソースパッドに電気的に接続される領域は、超高濃度第2導電型領域からなることを特徴とする請求項1乃至3のいずれか1項に記載のワイドギャップ半導体装置。
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PCT/JP2017/044820 WO2019116481A1 (ja) | 2017-12-14 | 2017-12-14 | ワイドギャップ半導体装置 |
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JP2010109221A (ja) * | 2008-10-31 | 2010-05-13 | Rohm Co Ltd | 半導体装置 |
JP2015056543A (ja) * | 2013-09-12 | 2015-03-23 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
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JP2001085705A (ja) * | 1999-09-16 | 2001-03-30 | Fuji Electric Co Ltd | ショットキーバリアダイオードの製造方法 |
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JP5560519B2 (ja) * | 2006-04-11 | 2014-07-30 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
JP2008112897A (ja) * | 2006-10-31 | 2008-05-15 | Matsushita Electric Ind Co Ltd | 半導体集積回路及びその製造方法 |
JP4365894B2 (ja) | 2007-08-07 | 2009-11-18 | パナソニック株式会社 | 炭化珪素半導体素子の製造方法 |
JP5588670B2 (ja) * | 2008-12-25 | 2014-09-10 | ローム株式会社 | 半導体装置 |
DE112009005320B4 (de) | 2009-10-14 | 2024-02-22 | Mitsubishi Electric Corporation | Leistungshalbleiterbauteil und zugehöriges Verfahren |
DE112011101254B4 (de) * | 2010-04-06 | 2017-04-06 | Mitsubishi Electric Corporation | Leistungshalbleiterbauteile und Verfahren zu deren Herstellung |
WO2012001837A1 (ja) | 2010-06-30 | 2012-01-05 | 三菱電機株式会社 | 電力用半導体装置 |
JP5858933B2 (ja) | 2011-02-02 | 2016-02-10 | ローム株式会社 | 半導体装置 |
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CN105122457B (zh) * | 2013-03-31 | 2017-11-17 | 新电元工业株式会社 | 半导体装置 |
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JP2015211159A (ja) | 2014-04-28 | 2015-11-24 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP6424524B2 (ja) * | 2014-09-08 | 2018-11-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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JP2003318413A (ja) * | 2002-02-19 | 2003-11-07 | Nissan Motor Co Ltd | 高耐圧炭化珪素ダイオードおよびその製造方法 |
JP2010109221A (ja) * | 2008-10-31 | 2010-05-13 | Rohm Co Ltd | 半導体装置 |
JP2015056543A (ja) * | 2013-09-12 | 2015-03-23 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
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US11342435B2 (en) | 2022-05-24 |
CN111406323A (zh) | 2020-07-10 |
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TW201929230A (zh) | 2019-07-16 |
EP3726586A4 (en) | 2021-07-21 |
CN111406323B (zh) | 2024-03-01 |
US20210074827A1 (en) | 2021-03-11 |
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WO2019116481A1 (ja) | 2019-06-20 |
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