KR900008615A - 반도체장치 - Google Patents

반도체장치

Info

Publication number
KR900008615A
KR900008615A KR1019890016289A KR890016289A KR900008615A KR 900008615 A KR900008615 A KR 900008615A KR 1019890016289 A KR1019890016289 A KR 1019890016289A KR 890016289 A KR890016289 A KR 890016289A KR 900008615 A KR900008615 A KR 900008615A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
KR1019890016289A
Other languages
English (en)
Other versions
KR930002511B1 (ko
Inventor
다카히로 이토
분시로 야마키
요시오 야마모토
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900008615A publication Critical patent/KR900008615A/ko
Application granted granted Critical
Publication of KR930002511B1 publication Critical patent/KR930002511B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
KR1019890016289A 1988-11-10 1989-11-10 반도체장치 KR930002511B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63284772A JPH07112024B2 (ja) 1988-11-10 1988-11-10 半導体装置
JP88-284772 1988-11-10

Publications (2)

Publication Number Publication Date
KR900008615A true KR900008615A (ko) 1990-06-03
KR930002511B1 KR930002511B1 (ko) 1993-04-03

Family

ID=17682816

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016289A KR930002511B1 (ko) 1988-11-10 1989-11-10 반도체장치

Country Status (3)

Country Link
US (1) US5021859A (ko)
JP (1) JPH07112024B2 (ko)
KR (1) KR930002511B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930008018B1 (ko) * 1991-06-27 1993-08-25 삼성전자 주식회사 바이씨모스장치 및 그 제조방법
US5268316A (en) * 1991-12-06 1993-12-07 National Semiconductor Corporation Fabrication process for Schottky diode with localized diode well
US5405790A (en) * 1993-11-23 1995-04-11 Motorola, Inc. Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
US5578860A (en) * 1995-05-01 1996-11-26 Motorola, Inc. Monolithic high frequency integrated circuit structure having a grounded source configuration
DE19821726C1 (de) * 1998-05-14 1999-09-09 Texas Instruments Deutschland Ingegrierte CMOS-Schaltung für die Verwendung bei hohen Frequenzen
US7449389B2 (en) * 2006-10-27 2008-11-11 Infineon Technologies Ag Method for fabricating a semiconductor structure
US9171838B2 (en) 2012-08-14 2015-10-27 Sony Corporation Integrated semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3018848A1 (de) * 1980-05-16 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verfahren zur herstellung monolithisch intetgrierter mos- und bipolar-halbleiteranordnungen fuer den vhf- und den uhf-bereich
JPS61154063A (ja) * 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
JPS62122307A (ja) * 1985-08-28 1987-06-03 Toshiba Corp 利得制御増幅回路

Also Published As

Publication number Publication date
JPH02130868A (ja) 1990-05-18
US5021859A (en) 1991-06-04
KR930002511B1 (ko) 1993-04-03
JPH07112024B2 (ja) 1995-11-29

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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Payment date: 20060331

Year of fee payment: 14

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