DE68917971D1 - Halbleitervorrichtung. - Google Patents

Halbleitervorrichtung.

Info

Publication number
DE68917971D1
DE68917971D1 DE68917971T DE68917971T DE68917971D1 DE 68917971 D1 DE68917971 D1 DE 68917971D1 DE 68917971 T DE68917971 T DE 68917971T DE 68917971 T DE68917971 T DE 68917971T DE 68917971 D1 DE68917971 D1 DE 68917971D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917971T
Other languages
English (en)
Other versions
DE68917971T2 (de
Inventor
Masaaki C O Intellect Kinugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68917971D1 publication Critical patent/DE68917971D1/de
Application granted granted Critical
Publication of DE68917971T2 publication Critical patent/DE68917971T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE68917971T 1988-04-15 1989-04-14 Halbleitervorrichtung. Expired - Fee Related DE68917971T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63093111A JPH01265542A (ja) 1988-04-15 1988-04-15 半導体装置

Publications (2)

Publication Number Publication Date
DE68917971D1 true DE68917971D1 (de) 1994-10-13
DE68917971T2 DE68917971T2 (de) 1995-03-09

Family

ID=14073414

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917971T Expired - Fee Related DE68917971T2 (de) 1988-04-15 1989-04-14 Halbleitervorrichtung.

Country Status (4)

Country Link
EP (1) EP0337481B1 (de)
JP (1) JPH01265542A (de)
KR (1) KR930002283B1 (de)
DE (1) DE68917971T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355010A (en) * 1991-06-21 1994-10-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide
JP2833291B2 (ja) * 1991-10-09 1998-12-09 日本電気株式会社 Ｃｍｏｓ型半導体集積回路装置
US5468669A (en) * 1993-10-29 1995-11-21 At&T Corp. Integrated circuit fabrication
US5652183A (en) * 1994-01-18 1997-07-29 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device containing excessive silicon in metal silicide film
JP3249292B2 (ja) * 1994-04-28 2002-01-21 株式会社リコー デュアルゲート構造の相補形ｍｉｓ半導体装置
US5543362A (en) * 1995-03-28 1996-08-06 Motorola, Inc. Process for fabricating refractory-metal silicide layers in a semiconductor device
US5550079A (en) * 1995-06-15 1996-08-27 Top Team/Microelectronics Corp. Method for fabricating silicide shunt of dual-gate CMOS device
DE19525069C1 (de) * 1995-07-10 1996-10-24 Siemens Ag Verfahren zur Herstellung einer integrierten CMOS-Schaltung
US6034401A (en) * 1998-02-06 2000-03-07 Lsi Logic Corporation Local interconnection process for preventing dopant cross diffusion in shared gate electrodes
KR100399073B1 (ko) * 2001-11-21 2003-09-26 주식회사 하이닉스반도체 반도체 소자의 캐패시터 및 그 제조방법
JP2017028219A (ja) * 2015-07-28 2017-02-02 三菱電機株式会社 炭化珪素半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111466A (ja) * 1985-11-09 1987-05-22 Toshiba Corp 半導体装置
JPH0194664A (ja) * 1987-10-05 1989-04-13 Nec Corp 電界効果トランジスタ
JPH01196142A (ja) * 1988-02-01 1989-08-07 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPH01265542A (ja) 1989-10-23
KR930002283B1 (ko) 1993-03-29
EP0337481A2 (de) 1989-10-18
EP0337481A3 (de) 1991-05-29
DE68917971T2 (de) 1995-03-09
EP0337481B1 (de) 1994-09-07
KR890016626A (ko) 1989-11-29

Similar Documents

Publication Publication Date Title
DE68917848D1 (de) Halbleiteranordnung.
DE3850855D1 (de) Halbleitervorrichtung.
KR900011017A (ko) 반도체장치
NL191814C (nl) Halfgeleidergeheugeninrichting.
DE68915673D1 (de) Halbleiterlaser-Vorrichtung.
DE68918884D1 (de) Halbleiterlaser-Vorrichtung.
DE68923505D1 (de) Halbleiterspeicheranordnung.
DE3889097D1 (de) Halbleiterspeicheranordnung.
KR900007100A (ko) 반도체장치
DE68921421D1 (de) Halbleitervorrichtung.
DE68910985D1 (de) Absteigevorrichtung.
DE68918367D1 (de) Halbleiterspeicheranordnung.
DE3773957D1 (de) Halbleitervorrichtung.
DE68923588D1 (de) Halbleiterspeicheranordnung.
DE68912512D1 (de) Halbleiterlaser-Vorrichtung.
DE68920946D1 (de) Halbleiter-Speichereinrichtung.
KR900008703A (ko) 반도체 장치
DE3889354D1 (de) Halbleiteranordnung.
DE68914794D1 (de) Lichtempfindliche Halbleitervorrichtung.
DE68910492D1 (de) Halbleiterlaservorrichtung.
DE68924080D1 (de) Halbleiterspeichervorrichtung.
KR900001037A (ko) 반도체 장치
DE68910415D1 (de) Halbleiter-Speichereinrichtung.
DE68917971D1 (de) Halbleitervorrichtung.
DE68905491D1 (de) Bahnwickelvorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee