DE68920946D1 - Halbleiter-Speichereinrichtung. - Google Patents

Halbleiter-Speichereinrichtung.

Info

Publication number
DE68920946D1
DE68920946D1 DE68920946T DE68920946T DE68920946D1 DE 68920946 D1 DE68920946 D1 DE 68920946D1 DE 68920946 T DE68920946 T DE 68920946T DE 68920946 T DE68920946 T DE 68920946T DE 68920946 D1 DE68920946 D1 DE 68920946D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920946T
Other languages
English (en)
Other versions
DE68920946T2 (de
Inventor
Masanobu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE68920946D1 publication Critical patent/DE68920946D1/de
Publication of DE68920946T2 publication Critical patent/DE68920946T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
DE68920946T 1988-10-25 1989-10-24 Halbleiter-Speichereinrichtung. Expired - Fee Related DE68920946T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26707988A JPH0821849B2 (ja) 1988-10-25 1988-10-25 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE68920946D1 true DE68920946D1 (de) 1995-03-16
DE68920946T2 DE68920946T2 (de) 1995-05-24

Family

ID=17439739

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920946T Expired - Fee Related DE68920946T2 (de) 1988-10-25 1989-10-24 Halbleiter-Speichereinrichtung.

Country Status (5)

Country Link
US (1) US5018107A (de)
EP (1) EP0366403B1 (de)
JP (1) JPH0821849B2 (de)
KR (1) KR930009462B1 (de)
DE (1) DE68920946T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900015148A (ko) * 1989-03-09 1990-10-26 미다 가쓰시게 반도체장치
JPH0793026B2 (ja) * 1989-09-20 1995-10-09 富士通株式会社 デコーダ回路
JPH0810728B2 (ja) * 1990-02-01 1996-01-31 株式会社東芝 半導体記憶装置
GB9007790D0 (en) * 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
GB9007791D0 (en) 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
US5283481A (en) * 1990-12-26 1994-02-01 International Business Machines Corporation Bipolar element bifet array decoder
JPH05210992A (ja) * 1992-01-30 1993-08-20 Fujitsu Ltd 不揮発性半導体記憶装置
KR960006373B1 (ko) * 1992-10-31 1996-05-15 삼성전자주식회사 반도체 메모리 장치의 워드라인 구동회로
JPH07254275A (ja) * 1994-01-31 1995-10-03 Toshiba Corp 半導体記憶装置
US5534797A (en) * 1994-12-23 1996-07-09 At&T Corp. Compact and fast row driver/decoder for semiconductor memory
US5719818A (en) * 1996-04-18 1998-02-17 Waferscale Integration Inc. Row decoder having triple transistor word line drivers
JP3602294B2 (ja) 1997-05-28 2004-12-15 株式会社ルネサステクノロジ 半導体メモリおよび情報記憶装置
US5903170A (en) * 1997-06-03 1999-05-11 The Regents Of The University Of Michigan Digital logic design using negative differential resistance diodes and field-effect transistors
US6055203A (en) * 1997-11-19 2000-04-25 Waferscale Integration Row decoder
EP0933784A1 (de) * 1997-12-31 1999-08-04 STMicroelectronics S.r.l. Hochspannungstreiberschaltung für die Dekodierungsphase in nichtflüchtigen mehrpegel Speicheranordnungen
JP2000048563A (ja) * 1998-07-30 2000-02-18 Nec Corp 半導体メモリ
JP3457209B2 (ja) * 1999-03-23 2003-10-14 富士通株式会社 電圧検出回路
US6366134B1 (en) * 1999-09-16 2002-04-02 Texas Instruments Incorporated CMOS dynamic logic circuitry using quantum mechanical tunneling structures
CN101313365B (zh) * 2005-11-25 2011-11-09 株式会社半导体能源研究所 半导体器件及其操作方法
US8913436B2 (en) * 2013-03-14 2014-12-16 Freescale Semiconductor, Inc. Non-volatile memory (NVM) with word line driver/decoder using a charge pump voltage
US10658026B2 (en) 2017-05-26 2020-05-19 Taiwan Semiconductor Manufacturing Company Limited Word line pulse width control circuit in static random access memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522238A (en) * 1978-07-31 1980-02-16 Fujitsu Ltd Decoder circuit
JPS58137192A (ja) * 1981-12-29 1983-08-15 Fujitsu Ltd 半導体記憶装置
US4623989A (en) * 1983-08-31 1986-11-18 Texas Instruments Incorporated Memory with p-channel cell access transistors
JPS6061996A (ja) * 1983-09-14 1985-04-09 Toshiba Corp 不揮発性メモリのアドレスデコ−ダ回路
JPS60113397A (ja) * 1983-11-24 1985-06-19 Fujitsu Ltd プログラマブルリ−ドオンリメモリ装置
JPS60143020A (ja) * 1983-12-29 1985-07-29 Matsushita Electric Ind Co Ltd カウンタ・デコ−ダ
US4782247A (en) * 1984-08-08 1988-11-01 Fujitsu Limited Decoder circuit having a variable power supply
JPS6145496A (ja) * 1984-08-08 1986-03-05 Fujitsu Ltd デコ−ダ回路
JPH0746515B2 (ja) * 1984-12-28 1995-05-17 日本電気株式会社 デコ−ダ回路
JPS61196498A (ja) * 1985-02-26 1986-08-30 Mitsubishi Electric Corp 半導体記憶装置
US4645952A (en) * 1985-11-14 1987-02-24 Thomson Components-Mostek Corporation High speed NOR gate

Also Published As

Publication number Publication date
JPH0821849B2 (ja) 1996-03-04
EP0366403A2 (de) 1990-05-02
KR930009462B1 (ko) 1993-10-04
JPH02114717A (ja) 1990-04-26
DE68920946T2 (de) 1995-05-24
EP0366403B1 (de) 1995-02-01
US5018107A (en) 1991-05-21
KR900006979A (ko) 1990-05-09
EP0366403A3 (de) 1991-04-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee