DE68910415T2 - Halbleiter-Speichereinrichtung. - Google Patents

Halbleiter-Speichereinrichtung.

Info

Publication number
DE68910415T2
DE68910415T2 DE68910415T DE68910415T DE68910415T2 DE 68910415 T2 DE68910415 T2 DE 68910415T2 DE 68910415 T DE68910415 T DE 68910415T DE 68910415 T DE68910415 T DE 68910415T DE 68910415 T2 DE68910415 T2 DE 68910415T2
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68910415T
Other languages
English (en)
Other versions
DE68910415D1 (de
Inventor
Shooji Oki Electric I Kitazawa
Teruhiro Oki Electric I Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE68910415D1 publication Critical patent/DE68910415D1/de
Publication of DE68910415T2 publication Critical patent/DE68910415T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE68910415T 1988-07-22 1989-07-20 Halbleiter-Speichereinrichtung. Expired - Fee Related DE68910415T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18332488A JP2513795B2 (ja) 1988-07-22 1988-07-22 Ｍｏｓ型半導体記憶装置

Publications (2)

Publication Number Publication Date
DE68910415D1 DE68910415D1 (de) 1993-12-09
DE68910415T2 true DE68910415T2 (de) 1994-06-01

Family

ID=16133714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68910415T Expired - Fee Related DE68910415T2 (de) 1988-07-22 1989-07-20 Halbleiter-Speichereinrichtung.

Country Status (4)

Country Link
US (1) US5031148A (de)
EP (1) EP0352111B1 (de)
JP (1) JP2513795B2 (de)
DE (1) DE68910415T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2790495B2 (ja) * 1989-11-02 1998-08-27 沖電気工業株式会社 不揮発性半導体記憶装置
JPH04206965A (ja) * 1990-11-30 1992-07-28 Sony Corp 不揮発性半導体メモリ
US5719806A (en) * 1991-02-18 1998-02-17 Yamane; Masatoshi Memory cell array
JP3313383B2 (ja) * 1991-06-27 2002-08-12 日本電気株式会社 読み出し専用記憶装置
FR2682802B1 (fr) * 1991-10-18 1993-12-03 Sgs Thomson Microelectronics Sa Dispositif pour generer une tension de programmation d'une memoire permanente programmable, notamment de type eprom, procede et memoire s'y rapportant.
WO1993012525A1 (en) * 1991-12-09 1993-06-24 Fujitsu Limited Flash memory improved in erasing characteristic, and circuit therefor
JPH06324753A (ja) * 1993-05-13 1994-11-25 Fujitsu Ltd 定電圧発生回路及び半導体記憶装置
US5557569A (en) * 1993-10-12 1996-09-17 Texas Instruments Incorporated Low voltage flash EEPROM C-cell using fowler-nordheim tunneling
US6137720A (en) * 1997-11-26 2000-10-24 Cypress Semiconductor Corporation Semiconductor reference voltage generator having a non-volatile memory structure
US7407480B2 (en) * 2001-07-27 2008-08-05 Ams Research Corporation Method and apparatus for correction of urinary and gynecological pathologies, including treatment of incontinence cystocele
US7706185B2 (en) * 2007-04-09 2010-04-27 Macronix International Co., Ltd. Reading circuitry in memory
JP5117950B2 (ja) 2008-07-18 2013-01-16 ラピスセミコンダクタ株式会社 データ読出回路及び半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387447A (en) * 1980-02-04 1983-06-07 Texas Instruments Incorporated Column and ground select sequence in electrically programmable memory
US4709352A (en) * 1984-11-19 1987-11-24 Oki Electric Industry Co., Ltd. MOS read-only memory systems
US4722075A (en) * 1985-10-15 1988-01-26 Texas Instruments Incorporated Equalized biased array for PROMS and EPROMS
DE3689475T2 (de) * 1986-06-27 1994-04-28 Nec Corp Halbleiterspeichersystem.

Also Published As

Publication number Publication date
EP0352111B1 (de) 1993-11-03
EP0352111A3 (en) 1990-09-12
EP0352111A2 (de) 1990-01-24
US5031148A (en) 1991-07-09
DE68910415D1 (de) 1993-12-09
JPH0233800A (ja) 1990-02-02
JP2513795B2 (ja) 1996-07-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee