DE69023468T2 - Halbleiter-Speichereinrichtung. - Google Patents

Halbleiter-Speichereinrichtung.

Info

Publication number
DE69023468T2
DE69023468T2 DE69023468T DE69023468T DE69023468T2 DE 69023468 T2 DE69023468 T2 DE 69023468T2 DE 69023468 T DE69023468 T DE 69023468T DE 69023468 T DE69023468 T DE 69023468T DE 69023468 T2 DE69023468 T2 DE 69023468T2
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023468T
Other languages
English (en)
Other versions
DE69023468D1 (de
Inventor
Mitsuhiro Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69023468D1 publication Critical patent/DE69023468D1/de
Publication of DE69023468T2 publication Critical patent/DE69023468T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/835—Masking faults in memories by using spares or by reconfiguring using programmable devices with roll call arrangements for redundant substitutions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
DE69023468T 1989-12-25 1990-12-27 Halbleiter-Speichereinrichtung. Expired - Fee Related DE69023468T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1337436A JP2734705B2 (ja) 1989-12-25 1989-12-25 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69023468D1 DE69023468D1 (de) 1995-12-14
DE69023468T2 true DE69023468T2 (de) 1996-06-27

Family

ID=18308614

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023468T Expired - Fee Related DE69023468T2 (de) 1989-12-25 1990-12-27 Halbleiter-Speichereinrichtung.

Country Status (4)

Country Link
US (1) US5267205A (de)
EP (1) EP0435287B1 (de)
JP (1) JP2734705B2 (de)
DE (1) DE69023468T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2687785B2 (ja) * 1991-09-27 1997-12-08 日本電気株式会社 半導体記憶装置
US5381370A (en) * 1993-08-24 1995-01-10 Cypress Semiconductor Corporation Memory with minimized redundancy access delay
JPH07111100A (ja) * 1993-10-08 1995-04-25 Nec Corp テスト回路
US5493241A (en) * 1994-11-16 1996-02-20 Cypress Semiconductor, Inc. Memory having a decoder with improved address hold time
JP3281203B2 (ja) * 1994-12-07 2002-05-13 株式会社東芝 半導体記憶装置
JPH09306198A (ja) * 1996-02-07 1997-11-28 Lsi Logic Corp 冗長列及び入／出力線を備えたａｓｉｃメモリを修復するための方法
US5764878A (en) * 1996-02-07 1998-06-09 Lsi Logic Corporation Built-in self repair system for embedded memories
US5768196A (en) * 1996-03-01 1998-06-16 Cypress Semiconductor Corp. Shift-register based row select circuit with redundancy for a FIFO memory
KR0177406B1 (ko) * 1996-04-12 1999-04-15 문정환 스페어 디코더 회로
US5737511A (en) * 1996-06-13 1998-04-07 United Microelectronics Corporation Method of reducing chip size by modifying main wordline repair structure
JPH10334694A (ja) * 1997-05-30 1998-12-18 Toshiba Corp 半導体記憶装置
JP3360035B2 (ja) * 1998-12-10 2002-12-24 エヌイーシーマイクロシステム株式会社 半導体記憶装置
US7888962B1 (en) 2004-07-07 2011-02-15 Cypress Semiconductor Corporation Impedance matching circuit
WO2006127600A2 (en) 2005-05-23 2006-11-30 Cadbury Adams Usa Llc Confectionery composition including an elastomeric component, a cooked saccharide component, and a flavor
MX2007014630A (es) 2005-05-23 2008-02-25 Cadbury Adams Usa Llc Composicion de goma de mascar rellena con liquido.
US8268371B2 (en) 2005-08-22 2012-09-18 Kraft Foods Global Brands Llc Degradable chewing gum
US8036846B1 (en) 2005-10-20 2011-10-11 Cypress Semiconductor Corporation Variable impedance sense architecture and method
US20080166449A1 (en) 2006-11-29 2008-07-10 Cadbury Adams Usa Llc Confectionery compositions including an elastomeric component and a saccharide component
US7656727B2 (en) * 2007-04-25 2010-02-02 Hewlett-Packard Development Company, L.P. Semiconductor memory device and system providing spare memory locations
US7821866B1 (en) 2007-11-14 2010-10-26 Cypress Semiconductor Corporation Low impedance column multiplexer circuit and method
MX2011008435A (es) 2009-02-10 2012-06-19 Cadbury Adams Mexico S De R L De C V Composiciones de recubrimiento, composiciones y metodos para confituras y gomas de mascar.
WO2015195534A2 (en) 2014-06-16 2015-12-23 Intercontinental Great Brands Llc Degradable chewing gum

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4573146A (en) * 1982-04-20 1986-02-25 Mostek Corporation Testing and evaluation of a semiconductor memory containing redundant memory elements
US4567580A (en) * 1983-06-29 1986-01-28 Fairchild Camera & Instrument Corporation Redundancy roll call technique
JPS62202399A (ja) * 1985-10-04 1987-09-07 Mitsubishi Electric Corp 半導体メモリ
JPH01130388A (ja) * 1987-11-16 1989-05-23 Nec Corp 半導体記憶装置
JPH01245497A (ja) * 1988-03-28 1989-09-29 Nec Corp 半導体メモリ
US5022006A (en) * 1988-04-01 1991-06-04 International Business Machines Corporation Semiconductor memory having bit lines with isolation circuits connected between redundant and normal memory cells
JPH0235697A (ja) * 1988-07-26 1990-02-06 Nec Corp メモリ回路
JPH03160695A (ja) * 1989-11-17 1991-07-10 Nec Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH03198298A (ja) 1991-08-29
DE69023468D1 (de) 1995-12-14
EP0435287A1 (de) 1991-07-03
EP0435287B1 (de) 1995-11-08
US5267205A (en) 1993-11-30
JP2734705B2 (ja) 1998-04-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee