DE68914885D1 - Halbleitervorrichtung. - Google Patents

Halbleitervorrichtung.

Info

Publication number
DE68914885D1
DE68914885D1 DE68914885T DE68914885T DE68914885D1 DE 68914885 D1 DE68914885 D1 DE 68914885D1 DE 68914885 T DE68914885 T DE 68914885T DE 68914885 T DE68914885 T DE 68914885T DE 68914885 D1 DE68914885 D1 DE 68914885D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68914885T
Other languages
English (en)
Other versions
DE68914885T2 (de
Inventor
Toru C O Yokohama La Fukushima
Tsunehisa C O Yoko Takabayashi
Mikio C O Yokohama Lab Ogai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Application granted granted Critical
Publication of DE68914885D1 publication Critical patent/DE68914885D1/de
Publication of DE68914885T2 publication Critical patent/DE68914885T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE68914885T 1988-06-08 1989-06-08 Halbleitervorrichtung. Expired - Fee Related DE68914885T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14083288 1988-06-08
JP1035784A JPH02229484A (ja) 1988-06-08 1989-02-15 半導体素子

Publications (2)

Publication Number Publication Date
DE68914885D1 true DE68914885D1 (de) 1994-06-01
DE68914885T2 DE68914885T2 (de) 1994-08-11

Family

ID=26374786

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68914885T Expired - Fee Related DE68914885T2 (de) 1988-06-08 1989-06-08 Halbleitervorrichtung.

Country Status (6)

Country Link
US (1) US5005179A (de)
EP (1) EP0346120B1 (de)
JP (1) JPH02229484A (de)
KR (1) KR930009600B1 (de)
CA (1) CA1304832C (de)
DE (1) DE68914885T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
CN1036822C (zh) * 1993-09-28 1997-12-24 吉林大学 钨丝做掩膜二次质子轰击垂直腔面发射激光器
US5544190A (en) * 1994-11-17 1996-08-06 Phillips Electronics North America Corporation II-VI Semiconductor diode laser with lateral current confinement
JP4423699B2 (ja) * 1999-05-27 2010-03-03 ソニー株式会社 半導体レーザ素子及びその作製方法
JP2005191209A (ja) * 2003-12-25 2005-07-14 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
JP2010267735A (ja) * 2009-05-13 2010-11-25 Sharp Corp 窒化物半導体レーザ素子、光ディスク装置および画像表示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142160A (en) * 1972-03-13 1979-02-27 Hitachi, Ltd. Hetero-structure injection laser
JPS51142991A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Semiconductor laser devices
JPS5286093A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Striped semiconductor laser
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4355396A (en) * 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
JPS5931086A (ja) * 1982-08-14 1984-02-18 Nippon Telegr & Teleph Corp <Ntt> 電流狭窄型半導体レ−ザ
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
DE3406361A1 (de) * 1984-02-22 1985-08-29 Telefunken electronic GmbH, 7100 Heilbronn Doppel-heterostruktur-laser und verfahren zu seiner herstellung
JPH01140789A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 半導体レーザ

Also Published As

Publication number Publication date
CA1304832C (en) 1992-07-07
KR930009600B1 (ko) 1993-10-07
DE68914885T2 (de) 1994-08-11
EP0346120A2 (de) 1989-12-13
JPH02229484A (ja) 1990-09-12
EP0346120B1 (de) 1994-04-27
US5005179A (en) 1991-04-02
KR900001019A (ko) 1990-01-31
EP0346120A3 (en) 1990-07-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee