DE68914794D1 - Lichtempfindliche Halbleitervorrichtung. - Google Patents

Lichtempfindliche Halbleitervorrichtung.

Info

Publication number
DE68914794D1
DE68914794D1 DE68914794T DE68914794T DE68914794D1 DE 68914794 D1 DE68914794 D1 DE 68914794D1 DE 68914794 T DE68914794 T DE 68914794T DE 68914794 T DE68914794 T DE 68914794T DE 68914794 D1 DE68914794 D1 DE 68914794D1
Authority
DE
Germany
Prior art keywords
semiconductor device
photosensitive semiconductor
photosensitive
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE68914794T
Other languages
English (en)
Other versions
DE68914794T2 (de
Inventor
Toshiaki Miyajima
Shinji Toyoyama
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17937670&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE68914794(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE68914794D1 publication Critical patent/DE68914794D1/de
Publication of DE68914794T2 publication Critical patent/DE68914794T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE68914794T 1988-11-30 1989-11-30 Lichtempfindliche Halbleitervorrichtung. Revoked DE68914794T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30482288A JPH0748559B2 (ja) 1988-11-30 1988-11-30 半導体装置

Publications (2)

Publication Number Publication Date
DE68914794D1 true DE68914794D1 (de) 1994-05-26
DE68914794T2 DE68914794T2 (de) 1994-10-20

Family

ID=17937670

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68914794T Revoked DE68914794T2 (de) 1988-11-30 1989-11-30 Lichtempfindliche Halbleitervorrichtung.

Country Status (4)

Country Link
US (1) US5105090A (de)
EP (1) EP0371814B1 (de)
JP (1) JPH0748559B2 (de)
DE (1) DE68914794T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198656A (en) * 1991-06-06 1993-03-30 At&T Bell Laboratories Dynamic optical logic using voltage pull up
US5278422A (en) * 1991-09-02 1994-01-11 Matsushita Electric Works, Ltd. Normally open solid state relay with minimized response time of relay action upon being turned off
US5223728A (en) * 1992-04-02 1993-06-29 Motorola, Inc. Optical switch integrated circuit
US5221847A (en) * 1992-06-26 1993-06-22 At&T Bell Laboratories Break-before-make control for form C solid-state relays with current limiter bypass
JP2801825B2 (ja) * 1993-01-14 1998-09-21 株式会社東芝 フォトカプラ装置
US5592033A (en) * 1993-12-16 1997-01-07 Cooper Industries, Inc. Photocell switching circuit
US5549762A (en) * 1995-01-13 1996-08-27 International Rectifier Corporation Photovoltaic generator with dielectric isolation and bonded, insulated wafer layers
US5693952A (en) * 1995-12-18 1997-12-02 Sulzer Intermedics Inc. Optically controlled high-voltage switch for an implantable defibrillator
US20010048140A1 (en) * 1997-04-10 2001-12-06 Inao Toyoda Photo sensing integrated circuit device and related circuit adjustment
JP3013894B2 (ja) * 1997-10-17 2000-02-28 日本電気株式会社 Ｆｅｔ装置
US6037602A (en) * 1998-02-13 2000-03-14 C.P. Clare Corporation Photovoltaic generator circuit and method of making same
US6559488B1 (en) 2000-10-02 2003-05-06 Stmicroelectronics, Inc. Integrated photodetector
US6580109B1 (en) 2002-02-01 2003-06-17 Stmicroelectronics, Inc. Integrated circuit device including two types of photodiodes
US6743652B2 (en) * 2002-02-01 2004-06-01 Stmicroelectronics, Inc. Method for making an integrated circuit device including photodiodes
US8961421B2 (en) * 2007-04-19 2015-02-24 General Electric Company Transmit/receive circuitry for ultrasound systems
JP2009117528A (ja) * 2007-11-05 2009-05-28 Nec Electronics Corp 光半導体リレー装置
JP5938725B2 (ja) * 2012-09-07 2016-06-22 パナソニックＩｐマネジメント株式会社 半導体装置
JP6038745B2 (ja) * 2013-08-22 2016-12-07 株式会社東芝 ダイオード回路およびｄｃ−ｄｃコンバータ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
US4419586A (en) * 1981-08-27 1983-12-06 Motorola, Inc. Solid-state relay and regulator
US4777387A (en) * 1984-02-21 1988-10-11 International Rectifier Corporation Fast turn-off circuit for photovoltaic driven MOSFET
JPS60250719A (ja) * 1984-05-25 1985-12-11 Matsushita Electric Works Ltd モス型電界効果トランジスタ利用リレ−
US4665316A (en) * 1984-11-21 1987-05-12 Telmos Incorporated Photovoltaic relay switch
US4755697A (en) * 1985-07-17 1988-07-05 International Rectifier Corporation Bidirectional output semiconductor field effect transistor
JPS62106660A (ja) * 1985-11-01 1987-05-18 Agency Of Ind Science & Technol 半導体装置
US4691129A (en) * 1986-03-19 1987-09-01 Siemens Aktiengesellschaft Drive circuit for a power MOSFET with source-side load
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
JP2521663B2 (ja) * 1986-04-23 1996-08-07 松下電工株式会社 半導体リレ−回路
IT1213384B (it) * 1986-11-24 1989-12-20 Lab Derivati Organici Mediolan Processo per la preparazione controllata di gilcosaminoglicani a basso peso molecolare.
JPH0734482B2 (ja) * 1987-04-30 1995-04-12 シャープ株式会社 光結合型半導体リレ−装置
US4859875A (en) * 1987-08-28 1989-08-22 Siemens Aktiengesellschaft Optocoupler for power FET
JPS6481522A (en) * 1987-09-24 1989-03-27 Agency Ind Science Techn Optical control circuit and semiconductor device constituting said circuit
US4931656A (en) * 1988-03-07 1990-06-05 Dionics Inc. Means to dynamically discharge a capacitively charged electrical device

Also Published As

Publication number Publication date
EP0371814A2 (de) 1990-06-06
EP0371814A3 (de) 1991-01-30
JPH0748559B2 (ja) 1995-05-24
EP0371814B1 (de) 1994-04-20
JPH02150076A (ja) 1990-06-08
US5105090A (en) 1992-04-14
DE68914794T2 (de) 1994-10-20

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8331 Complete revocation