DE68918884T2 - Halbleiterlaser-Vorrichtung. - Google Patents

Halbleiterlaser-Vorrichtung.

Info

Publication number
DE68918884T2
DE68918884T2 DE68918884T DE68918884T DE68918884T2 DE 68918884 T2 DE68918884 T2 DE 68918884T2 DE 68918884 T DE68918884 T DE 68918884T DE 68918884 T DE68918884 T DE 68918884T DE 68918884 T2 DE68918884 T2 DE 68918884T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68918884T
Other languages
English (en)
Other versions
DE68918884D1 (de
Inventor
Genichi C O Patent D Hatakoshi
Kazuhiko C O Patent Divi Itaya
Shigeya C O Patent D Naritsuka
Masayuki C O Patent D Ishikawa
Hajime C O Patent Divisi Okuda
Hideo C O Patent Divi Shiozawa
Yukio C O Patent Divi Watanabe
Yasuo C O Patent Division Ohba
Yoshihiro C O Patent D Kokubun
Yutaka C O Patent Divi Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5990888A external-priority patent/JP2653457B2/ja
Priority claimed from JP63114751A external-priority patent/JP2685801B2/ja
Priority claimed from JP11474788A external-priority patent/JPH01286479A/ja
Priority claimed from JP63114750A external-priority patent/JP2685800B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68918884D1 publication Critical patent/DE68918884D1/de
Publication of DE68918884T2 publication Critical patent/DE68918884T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
DE68918884T 1988-03-14 1989-03-14 Halbleiterlaser-Vorrichtung. Expired - Lifetime DE68918884T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP5990888A JP2653457B2 (ja) 1988-03-14 1988-03-14 半導体レーザ装置
JP63114751A JP2685801B2 (ja) 1988-05-13 1988-05-13 半導体レーザ装置
JP11474788A JPH01286479A (ja) 1988-05-13 1988-05-13 半導体レーザ装置
JP63114750A JP2685800B2 (ja) 1988-05-13 1988-05-13 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE68918884D1 DE68918884D1 (de) 1994-11-24
DE68918884T2 true DE68918884T2 (de) 1995-03-16

Family

ID=27463830

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918884T Expired - Lifetime DE68918884T2 (de) 1988-03-14 1989-03-14 Halbleiterlaser-Vorrichtung.

Country Status (3)

Country Link
US (2) US4893313A (de)
EP (1) EP0333418B1 (de)
DE (1) DE68918884T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5146466A (en) * 1988-09-29 1992-09-08 Sanyo Electric Co., Ltd. Semiconductor laser device
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
JP2831667B2 (ja) * 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法
JPH06105796B2 (ja) * 1989-05-30 1994-12-21 信越半導体株式会社 発光ダイオードおよびその製造方法
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JPH0327578A (ja) * 1989-06-23 1991-02-05 Eastman Kodatsuku Japan Kk 発光ダイオ―ドアレイ
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors
JP2778178B2 (ja) * 1990-01-31 1998-07-23 日本電気株式会社 半導体レーザ
US5124995A (en) * 1990-03-15 1992-06-23 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device
EP0456429B1 (de) * 1990-05-07 1995-12-20 Kabushiki Kaisha Toshiba Halbleiterlaser
EP0458409B1 (de) * 1990-05-23 2002-02-20 Uniphase Opto Holdings, Inc. Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben
US5144633A (en) * 1990-05-24 1992-09-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and manufacturing method thereof
US5625483A (en) * 1990-05-29 1997-04-29 Symbol Technologies, Inc. Integrated light source and scanning element implemented on a semiconductor or electro-optical substrate
JPH0461292A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体レーザ
US5268328A (en) * 1990-09-07 1993-12-07 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor laser
JPH04116993A (ja) * 1990-09-07 1992-04-17 Matsushita Electric Ind Co Ltd 半導体レーザ及びその製造方法
JP2863648B2 (ja) * 1991-04-16 1999-03-03 三菱電機株式会社 可視光半導体レーザ
JP3129779B2 (ja) * 1991-08-30 2001-01-31 株式会社東芝 半導体レーザ装置
US5294808A (en) * 1992-10-23 1994-03-15 Cornell Research Foundation, Inc. Pseudomorphic and dislocation free heteroepitaxial structures
US5596591A (en) * 1993-03-03 1997-01-21 Nec Corporation Gain-guided type laser diode
JP2914847B2 (ja) * 1993-07-09 1999-07-05 株式会社東芝 半導体レーザ装置
US5631918A (en) * 1993-11-22 1997-05-20 Xerox Corporation Laser diode arrays with close beam offsets
JPH07162089A (ja) * 1993-12-13 1995-06-23 Mitsubishi Electric Corp 可視光レーザダイオード及びその製造方法
JP2982619B2 (ja) * 1994-06-29 1999-11-29 日本電気株式会社 半導体光導波路集積型受光素子
US5974069A (en) * 1994-09-16 1999-10-26 Rohm Co., Ltd Semiconductor laser and manufacturing method thereof
GB2308732A (en) * 1995-12-29 1997-07-02 Sharp Kk A semiconductor laser device
TW342545B (en) * 1996-03-28 1998-10-11 Sanyo Electric Co Semiconductor laser element and method for designing same
JPH10150244A (ja) * 1996-11-20 1998-06-02 Mitsubishi Electric Corp 半導体装置のシミュレーション方法
JP4076671B2 (ja) * 1999-04-14 2008-04-16 ローム株式会社 レーザビームプリンタ用光源装置
JP3974852B2 (ja) * 2000-09-08 2007-09-12 三井化学株式会社 半導体レーザ素子
US6798798B2 (en) * 2000-12-12 2004-09-28 The Furukawa Electric Co., Ltd. Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module
JP3866540B2 (ja) 2001-07-06 2007-01-10 株式会社東芝 窒化物半導体素子およびその製造方法
US7215691B2 (en) * 2002-09-19 2007-05-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP4751024B2 (ja) * 2004-01-16 2011-08-17 シャープ株式会社 半導体レーザおよびその製造方法
TWI540753B (zh) * 2013-07-30 2016-07-01 隆達電子股份有限公司 發光二極體結構

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799228A (en) * 1985-08-23 1989-01-17 Kabushiki Kaisha Toshiba Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide
JP2647076B2 (ja) * 1986-02-28 1997-08-27 株式会社東芝 半導体レーザ装置及びその製造方法
JPH0815228B2 (ja) * 1986-02-28 1996-02-14 株式会社東芝 半導体レ−ザ装置及びその製造方法
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
JP2555282B2 (ja) * 1986-08-08 1996-11-20 株式会社東芝 半導体レ−ザ装置及びその製造方法
DE3789695T2 (de) * 1986-08-08 1994-08-25 Toshiba Kawasaki Kk Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter.
JPH06343387A (ja) * 1993-06-11 1994-12-20 Masayoshi Kaniyoshi 野菜の容器詰めと冷凍物

Also Published As

Publication number Publication date
EP0333418A2 (de) 1989-09-20
EP0333418B1 (de) 1994-10-19
US4893313A (en) 1990-01-09
EP0333418A3 (en) 1989-11-29
DE68918884D1 (de) 1994-11-24
US5036521A (en) 1991-07-30

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8320 Willingness to grant licences declared (paragraph 23)