DE3789695T2 - Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter. - Google Patents

Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter.

Info

Publication number
DE3789695T2
DE3789695T2 DE3789695T DE3789695T DE3789695T2 DE 3789695 T2 DE3789695 T2 DE 3789695T2 DE 3789695 T DE3789695 T DE 3789695T DE 3789695 T DE3789695 T DE 3789695T DE 3789695 T2 DE3789695 T2 DE 3789695T2
Authority
DE
Germany
Prior art keywords
stripe
semiconductor laser
double heterostructure
mesa waveguide
shaped mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3789695T
Other languages
English (en)
Other versions
DE3789695D1 (de
Inventor
Yasuo C O Patent Division Ohba
Miyoko C O Patent Div Watanabe
Hideto C O Patent Div Sugawara
Masayuki C O Patent D Ishikawa
Yukio C O Patent Divi Watanabe
Motoyuki C O Patent D Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18650586A external-priority patent/JP2555282B2/ja
Priority claimed from JP61225842A external-priority patent/JP2659937B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3789695D1 publication Critical patent/DE3789695D1/de
Application granted granted Critical
Publication of DE3789695T2 publication Critical patent/DE3789695T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
DE3789695T 1986-08-08 1987-08-07 Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter. Expired - Lifetime DE3789695T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18650586A JP2555282B2 (ja) 1986-08-08 1986-08-08 半導体レ−ザ装置及びその製造方法
JP61225842A JP2659937B2 (ja) 1986-09-26 1986-09-26 半導体発光装置

Publications (2)

Publication Number Publication Date
DE3789695D1 DE3789695D1 (de) 1994-06-01
DE3789695T2 true DE3789695T2 (de) 1994-08-25

Family

ID=26503811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789695T Expired - Lifetime DE3789695T2 (de) 1986-08-08 1987-08-07 Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter.

Country Status (3)

Country Link
US (2) US4809287A (de)
EP (1) EP0259026B1 (de)
DE (1) DE3789695T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0328393B1 (de) * 1988-02-09 1993-10-06 Kabushiki Kaisha Toshiba Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren
EP0333418B1 (de) * 1988-03-14 1994-10-19 Kabushiki Kaisha Toshiba Halbleiterlaser-Vorrichtung
JP2685209B2 (ja) * 1988-03-25 1997-12-03 株式会社東芝 半導体装置及び半導体発光装置
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
JP2831667B2 (ja) * 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法
JP2807250B2 (ja) * 1989-02-22 1998-10-08 株式会社東芝 半導体レーザ装置
JP2809691B2 (ja) * 1989-04-28 1998-10-15 株式会社東芝 半導体レーザ
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5192711A (en) * 1989-09-18 1993-03-09 Mitsubishi Denki Kabushiki Kaisha Method for producing a semiconductor laser device
US5065200A (en) * 1989-12-21 1991-11-12 Bell Communications Research, Inc. Geometry dependent doping and electronic devices produced thereby
EP0456429B1 (de) * 1990-05-07 1995-12-20 Kabushiki Kaisha Toshiba Halbleiterlaser
JPH07120838B2 (ja) * 1990-06-05 1995-12-20 松下電器産業株式会社 半導体発光装置
JP2965668B2 (ja) * 1990-11-13 1999-10-18 株式会社東芝 半導体レーザ素子及びその製造方法
JP3242967B2 (ja) * 1992-01-31 2001-12-25 株式会社東芝 半導体発光素子
DE69308977T2 (de) * 1992-09-25 1997-10-09 Furukawa Electric Co Ltd Halbleiterlaservorrichtung
JPH06296060A (ja) * 1993-04-08 1994-10-21 Mitsubishi Electric Corp 半導体可視光レーザダイオードの製造方法
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
US5721751A (en) * 1993-10-28 1998-02-24 Nippon Telegraph & Telephone Corporation Semiconductor laser
JP2870632B2 (ja) * 1995-07-13 1999-03-17 日本電気株式会社 半導体光集積回路およびその製造方法
TW336358B (en) 1997-10-14 1998-07-11 Ind Tech Res Inst Laser diode for digital versatile disk (DVD) and process for producing the same
JP3481458B2 (ja) * 1998-05-14 2003-12-22 アンリツ株式会社 半導体レーザ
US6613679B2 (en) * 1999-12-22 2003-09-02 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor device
JP3726252B2 (ja) * 2000-02-23 2005-12-14 独立行政法人理化学研究所 紫外発光素子およびＩｎＡｌＧａＮ発光層の製造方法
JP3763459B2 (ja) * 2001-06-26 2006-04-05 シャープ株式会社 半導体レーザ素子及びその製造方法
JP3866540B2 (ja) 2001-07-06 2007-01-10 株式会社東芝 窒化物半導体素子およびその製造方法
US8402589B2 (en) 2001-07-25 2013-03-26 The Libman Company Cleaning implement
US7520018B2 (en) * 2001-07-25 2009-04-21 The Libman Company Mop with attached wringer
MX2012002552A (es) 2011-03-04 2012-11-30 Libman Co Instrumento de limpieza.
JP2012252139A (ja) * 2011-06-02 2012-12-20 Sumitomo Electric Ind Ltd 半導体光変調器の製造方法及び半導体光変調器
US11158995B2 (en) * 2018-06-01 2021-10-26 Visual Photonics Epitaxy Co., Ltd. Laser diode with defect blocking layer
US11419472B2 (en) 2020-03-13 2022-08-23 The Libman Company Cleaning implement

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4366568A (en) * 1979-12-20 1982-12-28 Matsushita Electric Industrial Co. Ltd. Semiconductor laser
JPS59129486A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 半導体レーザ装置の製造方法
JPS6045085A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6174382A (ja) * 1984-09-20 1986-04-16 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置およびその製造方法
JPS61125184A (ja) * 1984-11-22 1986-06-12 Toshiba Corp 半導体レ−ザ装置
JPH0710015B2 (ja) * 1985-01-30 1995-02-01 株式会社日立製作所 半導体レ−ザ装置及びその作製方法
US4821278A (en) * 1987-04-02 1989-04-11 Trw Inc. Inverted channel substrate planar semiconductor laser

Also Published As

Publication number Publication date
US4809287A (en) 1989-02-28
DE3789695D1 (de) 1994-06-01
EP0259026A2 (de) 1988-03-09
EP0259026A3 (en) 1988-10-05
US4949349A (en) 1990-08-14
EP0259026B1 (de) 1994-04-27

Similar Documents

Publication Publication Date Title
DE3789695D1 (de) Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter.
DE3585741D1 (de) Halbleiterlaser mit verteilter rueckkopplung.
DE3681052D1 (de) Halbleiterlaser mit verteilter rueckkopplung.
DE68915338D1 (de) Gitter-Koppler mit monolithisch integriertem Quantum-Well-Index-Modulator.
DE3750130D1 (de) Halbleiter-Heterostruktur mit einem Bereich mit veränderlicher SnSi Verbindung.
DE69111197D1 (de) Abstimmbarer Halbleiterlaser mit verteilter Rückkopplung.
NL7900756A (nl) Heterostructuur laser.
DE3579991D1 (de) Halbleiterlaser.
NL194219B (nl) Gedistribueerd teruggekoppelde halfgeleiderlaser.
DE3873398D1 (de) Phasenverschobener halbleiterlaser mit verteilter rueckkopplung.
DE3686785D1 (de) Halbleiterlaservorrichtung mit verteilter rueckkopplung.
DE68909929T2 (de) Photodetektor mit mehrfacher heterostruktur.
DE3850139D1 (de) Halbleiterlaser mit variabler Oszillationswellenlänge.
DE69109141D1 (de) Laserdiode mit stabilisiertem Transversal-Mode.
DE3689809D1 (de) Eingebetteter Heterostrukturhalbleiterlaser.
DE3581557D1 (de) Halbleiterlaser.
DE3782462T2 (de) Laserdiode mit verteilter rueckkopplung.
DE3581304D1 (de) Doppelheterostruktur-halbleiterlaser fuer sichtbare strahlung.
DE3579826D1 (de) Halbleiterlaser.
DE3875768T2 (de) Halbleiterlaser mit verteilter rueckkopplung.
DE3870996D1 (de) Halbleiter-laser mit verteilter rueckkopplung.
DE3575243D1 (de) Halbleiterlaser.
DE3689756D1 (de) Halbleiterlaser mit verteilter Rückkopplung.
DE3780444D1 (de) Quantum-well-laser mit erhoehter ladungstraegerdichte.
DE68918022D1 (de) Halbleiterlaser mit Stegwellenleiter.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)