DE3579826D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE3579826D1
DE3579826D1 DE8585300322T DE3579826T DE3579826D1 DE 3579826 D1 DE3579826 D1 DE 3579826D1 DE 8585300322 T DE8585300322 T DE 8585300322T DE 3579826 T DE3579826 T DE 3579826T DE 3579826 D1 DE3579826 D1 DE 3579826D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585300322T
Other languages
English (en)
Inventor
Sadayoshi Matsui
Mototaka Taneya
Haruhisa Takiguchi
Shinji Kaneiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3579826D1 publication Critical patent/DE3579826D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H01S2301/185—Semiconductor lasers with special structural design for influencing the near- or far-field for reduction of Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8585300322T 1984-01-17 1985-01-17 Halbleiterlaser. Expired - Lifetime DE3579826D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59006922A JPS60150682A (ja) 1984-01-17 1984-01-17 半導体レ−ザ素子

Publications (1)

Publication Number Publication Date
DE3579826D1 true DE3579826D1 (de) 1990-10-31

Family

ID=11651735

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585300322T Expired - Lifetime DE3579826D1 (de) 1984-01-17 1985-01-17 Halbleiterlaser.

Country Status (4)

Country Link
US (1) US4679200A (de)
EP (1) EP0149563B1 (de)
JP (1) JPS60150682A (de)
DE (1) DE3579826D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS60201687A (ja) * 1984-03-27 1985-10-12 Sony Corp 半導体レ−ザ−
JPH0682884B2 (ja) * 1984-03-28 1994-10-19 株式会社東芝 半導体レーザ
JPS61289689A (ja) * 1985-06-18 1986-12-19 Mitsubishi Electric Corp 半導体発光装置
JPS621296A (ja) * 1985-06-26 1987-01-07 Sharp Corp 多端子型半導体レ−ザ素子
JPS6218783A (ja) * 1985-07-17 1987-01-27 Sharp Corp 半導体レ−ザ素子
JPS62130586A (ja) * 1985-12-03 1987-06-12 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
US4946802A (en) * 1986-05-31 1990-08-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device fabricating method
JPS62283685A (ja) * 1986-05-31 1987-12-09 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
JP2538258B2 (ja) * 1987-06-20 1996-09-25 三洋電機株式会社 半導体レ―ザ
GB2318211B (en) * 1996-10-09 1999-03-31 Toshiba Cambridge Res Center Optical waveguide structure
JP5261857B2 (ja) * 2001-09-21 2013-08-14 日本電気株式会社 端面発光型半導体レーザおよび半導体レーザ・モジュール
US7469862B2 (en) 2005-04-22 2008-12-30 Goodrich Corporation Aircraft engine nacelle inlet having access opening for electrical ice protection system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4280106A (en) * 1979-05-15 1981-07-21 Xerox Corporation Striped substrate planar laser
JPS58197787A (ja) * 1982-05-12 1983-11-17 Nec Corp 半導体レ−ザ
JPS5961982A (ja) * 1982-09-30 1984-04-09 Sony Corp 半導体レ−ザ−
US4594718A (en) * 1983-02-01 1986-06-10 Xerox Corporation Combination index/gain guided semiconductor lasers

Also Published As

Publication number Publication date
EP0149563A3 (en) 1986-08-27
US4679200A (en) 1987-07-07
JPS60150682A (ja) 1985-08-08
EP0149563A2 (de) 1985-07-24
EP0149563B1 (de) 1990-09-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition