DE3584702D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3584702D1
DE3584702D1 DE8585110645T DE3584702T DE3584702D1 DE 3584702 D1 DE3584702 D1 DE 3584702D1 DE 8585110645 T DE8585110645 T DE 8585110645T DE 3584702 T DE3584702 T DE 3584702T DE 3584702 D1 DE3584702 D1 DE 3584702D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585110645T
Other languages
English (en)
Inventor
Masayuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3584702D1 publication Critical patent/DE3584702D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8585110645T 1984-08-24 1985-08-23 Halbleiterlaservorrichtung. Expired - Fee Related DE3584702D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59176220A JPH0632332B2 (ja) 1984-08-24 1984-08-24 半導体レ−ザ装置

Publications (1)

Publication Number Publication Date
DE3584702D1 true DE3584702D1 (de) 1992-01-02

Family

ID=16009723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585110645T Expired - Fee Related DE3584702D1 (de) 1984-08-24 1985-08-23 Halbleiterlaservorrichtung.

Country Status (5)

Country Link
US (1) US4719636A (de)
EP (1) EP0173269B1 (de)
JP (1) JPH0632332B2 (de)
CA (1) CA1284371C (de)
DE (1) DE3584702D1 (de)

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GB8612956D0 (en) * 1986-05-28 1986-07-02 British Telecomm Optical signal regenerator
GB2197531B (en) * 1986-11-08 1991-02-06 Stc Plc Distributed feedback laser
JPH0719928B2 (ja) * 1986-11-26 1995-03-06 日本電気株式会社 光フイルタ素子
DE3809440C2 (de) * 1987-03-20 1995-10-26 Mitsubishi Electric Corp Bistabiler Halbleiterlaser
JPH0656908B2 (ja) * 1987-03-31 1994-07-27 日本電信電話株式会社 波長変換素子
JPH0831653B2 (ja) * 1987-07-21 1996-03-27 国際電信電話株式会社 半導体レ−ザ
JP2749038B2 (ja) * 1987-07-31 1998-05-13 株式会社日立製作所 波長可変半導体レーザ
JPH073909B2 (ja) * 1987-09-08 1995-01-18 三菱電機株式会社 半導体レーザの製造方法
JP2666297B2 (ja) * 1987-09-11 1997-10-22 富士通株式会社 波長可変型半導体レーザ
EP0309744A3 (de) * 1987-09-29 1989-06-28 Siemens Aktiengesellschaft Anordnung mit einem flächig sich erstreckenden Dünnfilmwellenleiter
JP2825508B2 (ja) * 1987-10-09 1998-11-18 株式会社日立製作所 半導体レーザ装置および光通信システム
JPH084186B2 (ja) * 1987-10-28 1996-01-17 国際電信電話株式会社 半導体レーザ
JP2659199B2 (ja) * 1987-11-11 1997-09-30 日本電気株式会社 可変波長フィルタ
US4878222A (en) * 1988-08-05 1989-10-31 Eastman Kodak Company Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot
US4972352A (en) * 1988-08-10 1990-11-20 Shildon Limited Semiconductors lasers
FR2636177B1 (fr) * 1988-09-08 1990-11-16 Comp Generale Electricite Source laser a semi-conducteur modulee a frequence elevee
DE58906978D1 (de) * 1988-09-22 1994-03-24 Siemens Ag Abstimmbarer DFB-Laser.
FR2639773B1 (fr) * 1988-11-25 1994-05-13 Alcatel Nv Laser a semi-conducteur accordable
US4987576A (en) * 1988-11-30 1991-01-22 Siemens Aktiengesellschaft Electrically tunable semiconductor laser with ridge waveguide
NL8803080A (nl) * 1988-12-16 1990-07-16 Philips Nv Verstembare halfgeleiderdiodelaser met verdeelde reflectie en vervaardigingswijze van een dergelijke halfgeleiderdiodelaser.
US4905253A (en) * 1989-01-27 1990-02-27 American Telephone And Telegraph Company Distributed Bragg reflector laser for frequency modulated communication systems
US4908833A (en) * 1989-01-27 1990-03-13 American Telephone And Telegraph Company Distributed feedback laser for frequency modulated communication systems
US5020153A (en) * 1989-02-08 1991-05-28 At&T Bell Laboratories Tunable narrowband receiver utilizing distributed Bragg reflector laser structure
ES2042819T3 (es) * 1989-02-15 1993-12-16 Siemens Ag Laser semiconductor sintonizable.
DE69011921T2 (de) * 1989-04-04 1995-03-02 Canon Kk Halbleiterlaser mit veränderbarer Emissionswellenlänge und selektives Wellenlängenfitter und Verfahren zum Betrieb derselben.
US4914666A (en) * 1989-05-04 1990-04-03 At&T Bell Laboratories Random-access digitally -tuned optical frequency synthesizer
US4916705A (en) * 1989-05-04 1990-04-10 At&T Bell Laboratories Random-access digitally-tuned coherent optical receiver
DE3915625A1 (de) * 1989-05-12 1990-11-15 Standard Elektrik Lorenz Ag Halbleiterlaser
US5177758A (en) * 1989-06-14 1993-01-05 Hitachi, Ltd. Semiconductor laser device with plural active layers and changing optical properties
JPH0357288A (ja) * 1989-07-17 1991-03-12 Siemens Ag 半導体レーザーを有するデバイスおよびその使用方法
US5023878A (en) * 1989-09-15 1991-06-11 At&T Bell Laboratories Apparatus comprising a quantum well device and method of operating the apparatus
JPH0457384A (ja) * 1990-06-27 1992-02-25 Mitsubishi Electric Corp 半導体レーザ
US5070509A (en) * 1990-08-09 1991-12-03 Eastman Kodak Company Surface emitting, low threshold (SELTH) laser diode
US5091916A (en) * 1990-09-28 1992-02-25 At&T Bell Laboratories Distributed reflector laser having improved side mode suppression
NL9100103A (nl) * 1991-01-23 1992-08-17 Philips Nv Halfgeleiderdiodelaser met monitordiode.
US5319659A (en) * 1992-05-14 1994-06-07 The United States Of America As Represented By The United States Department Of Energy Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching
JPH06204454A (ja) * 1992-12-28 1994-07-22 Mitsubishi Electric Corp 光変調器付半導体レーザ及びその製造方法
FR2700643B1 (fr) * 1993-01-19 1995-02-24 Alcatel Nv Source semi-conductrice d'impulsions optiques à commutation de gain et système de transmission à solitons.
EP0692853B1 (de) * 1994-07-15 1998-09-30 Nec Corporation Wellenlängenabstimmbarer Halbleiterlaser
US5835650A (en) * 1995-11-16 1998-11-10 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
US5832014A (en) * 1997-02-11 1998-11-03 Lucent Technologies Inc. Wavelength stabilization in tunable semiconductor lasers
JP3404242B2 (ja) * 1997-02-14 2003-05-06 日本電気株式会社 波長可変半導体レーザの駆動方法及び波長可変光源装置
JP2001036192A (ja) * 1999-07-22 2001-02-09 Nec Corp 分布帰還型半導体レーザおよびその製造方法
JP2002043698A (ja) * 1999-12-22 2002-02-08 Yokogawa Electric Corp Ｓｈｇレーザ光源及びｓｈｇレーザ光源の変調方法
US6697388B1 (en) * 2000-05-05 2004-02-24 Agere Systems, Inc. Control system for use with DBR lasers
US6678301B1 (en) * 2000-07-14 2004-01-13 Triquint Technology Holding Co. Apparatus and method for minimizing wavelength chirp of laser devices
US6829262B1 (en) * 2000-09-22 2004-12-07 Tri Quint Technology Holding Co. Aging in tunable semiconductor lasers
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
US6891870B2 (en) 2001-11-09 2005-05-10 Corning Lasertron, Inc. Distributed feedback laser for isolator-free operation
US6650675B2 (en) 2001-11-09 2003-11-18 Corning Lasertron, Incorporated Tunable laser device for avoiding optical mode hops
JP3801073B2 (ja) * 2002-03-11 2006-07-26 日本電気株式会社 外部共振器型波長可変パルス光源
JP4104925B2 (ja) * 2002-07-10 2008-06-18 三菱電機株式会社 波長可変半導体レーザの波長制御装置
CN100424946C (zh) * 2004-02-27 2008-10-08 松下电器产业株式会社 相干光源及其控制方法,以及使用了相干光源的显示装置及激光显示器
US7436871B2 (en) * 2004-12-03 2008-10-14 Corning Incorporated Method and device for performing wavelength modulation with Distributed Bragg Reflector (DBR) laser
KR100620391B1 (ko) * 2004-12-14 2006-09-12 한국전자통신연구원 집적형 반도체 광원
JP5303124B2 (ja) * 2007-07-19 2013-10-02 住友電工デバイス・イノベーション株式会社 半導体レーザ装置の制御方法
JP2009231316A (ja) * 2008-03-19 2009-10-08 Nec Corp Ｌｄモジュール
KR101190862B1 (ko) * 2008-12-18 2012-10-15 한국전자통신연구원 단일 종모드 발진 광원 기반의 씨앗광 모듈
FR2986379B1 (fr) * 2012-01-30 2017-03-17 Agilent Tech Inc (A Delaware Corporation) "laser accordable en phase continue"
JP6730868B2 (ja) * 2016-07-15 2020-07-29 日本電信電話株式会社 波長可変半導体レーザ
US10320152B2 (en) 2017-03-28 2019-06-11 Freedom Photonics Llc Tunable laser
US10355451B2 (en) 2017-03-28 2019-07-16 Freedom Photonics Llc Laser with sampled grating distributed bragg reflector

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1543405A (en) * 1975-03-29 1979-04-04 Licentia Gmbh Method of and arrangement for producing coherent mode radiation
JPS5844785A (ja) * 1981-08-27 1983-03-15 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
JPS5878488A (ja) * 1981-11-05 1983-05-12 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レーザの駆動方法
JPS5885585A (ja) * 1981-11-16 1983-05-21 Nec Corp 半導体レ−ザ素子
US4608697A (en) * 1983-04-11 1986-08-26 At&T Bell Laboratories Spectral control arrangement for coupled cavity laser
US4558449A (en) * 1983-07-08 1985-12-10 At&T Bell Laboratories Semiconductor laser with coupled loss modulator for optical telecommunications

Also Published As

Publication number Publication date
JPS6154690A (ja) 1986-03-18
EP0173269B1 (de) 1991-11-21
JPH0632332B2 (ja) 1994-04-27
EP0173269A2 (de) 1986-03-05
US4719636A (en) 1988-01-12
CA1284371C (en) 1991-05-21
EP0173269A3 (en) 1987-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee