DE3575501D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE3575501D1
DE3575501D1 DE8585301613T DE3575501T DE3575501D1 DE 3575501 D1 DE3575501 D1 DE 3575501D1 DE 8585301613 T DE8585301613 T DE 8585301613T DE 3575501 T DE3575501 T DE 3575501T DE 3575501 D1 DE3575501 D1 DE 3575501D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585301613T
Other languages
English (en)
Inventor
Yutaka Mihashi
Yutaka Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3575501D1 publication Critical patent/DE3575501D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8585301613T 1984-03-13 1985-03-08 Halbleiterlaser. Expired - Fee Related DE3575501D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59049734A JPS60192380A (ja) 1984-03-13 1984-03-13 半導体レ−ザ装置

Publications (1)

Publication Number Publication Date
DE3575501D1 true DE3575501D1 (de) 1990-02-22

Family

ID=12839417

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585301613T Expired - Fee Related DE3575501D1 (de) 1984-03-13 1985-03-08 Halbleiterlaser.

Country Status (4)

Country Link
US (2) US4667332A (de)
EP (1) EP0155152B1 (de)
JP (1) JPS60192380A (de)
DE (1) DE3575501D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783425A (en) * 1985-11-06 1988-11-08 Hitachi, Ltd. Fabrication process of semiconductor lasers
JPS62281488A (ja) * 1986-05-30 1987-12-07 Nec Corp 半導体レ−ザ
JPS6373685A (ja) * 1986-09-17 1988-04-04 Mitsubishi Electric Corp 半導体レ−ザアレイおよびその製造方法
JPS6373688A (ja) * 1986-09-17 1988-04-04 Mitsubishi Electric Corp 半導体発光装置
US4788159A (en) * 1986-09-18 1988-11-29 Eastman Kodak Company Process for forming a positive index waveguide
JPH0821755B2 (ja) * 1986-10-07 1996-03-04 ソニー株式会社 半導体レーザの製造方法
JPS63140591A (ja) * 1986-12-02 1988-06-13 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
JPS63166285A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体発光装置の製造方法
JP2553580B2 (ja) * 1987-08-19 1996-11-13 三菱電機株式会社 半導体レ−ザ装置
DE68909632T2 (de) * 1988-02-09 1994-03-10 Toshiba Kawasaki Kk Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
JPH01235397A (ja) * 1988-03-16 1989-09-20 Mitsubishi Electric Corp 半導体レーザ
JPH01293690A (ja) * 1988-05-23 1989-11-27 Mitsubishi Electric Corp 半導体レーザ
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JPH02253682A (ja) * 1989-03-27 1990-10-12 Mitsubishi Electric Corp 半導体レーザ
JPH0719931B2 (ja) * 1989-04-06 1995-03-06 三菱電機株式会社 半導体レーザ装置およびその製造方法
JPH03127891A (ja) * 1989-10-13 1991-05-30 Mitsubishi Electric Corp 半導体レーザ装置
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
EP0456485B1 (de) * 1990-05-09 1996-07-17 Sharp Kabushiki Kaisha Verfahren zur Herstellung eines Halbleiterbauelements
JPH06302908A (ja) * 1993-04-15 1994-10-28 Fujitsu Ltd 半導体レーザ
JPH0750445A (ja) * 1993-06-02 1995-02-21 Rohm Co Ltd 半導体レーザの製法
US5889913A (en) * 1995-03-15 1999-03-30 Kabushiki Kaisha Toshiba Optical semiconductor device and method of fabricating the same
US7233088B2 (en) * 2003-01-17 2007-06-19 Magnetic Torque International, Ltd. Torque converter and system using the same
US7268454B2 (en) * 2003-01-17 2007-09-11 Magnetic Torque International, Ltd. Power generating systems
US20060111191A1 (en) * 2004-11-19 2006-05-25 Magnetic Torque International Torque transfer system and method of using the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541741A (en) * 1978-09-20 1980-03-24 Hitachi Ltd Semiconductor laser device
CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser
US4366568A (en) * 1979-12-20 1982-12-28 Matsushita Electric Industrial Co. Ltd. Semiconductor laser
JPS56164590A (en) * 1980-05-23 1981-12-17 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
GB2105099B (en) * 1981-07-02 1985-06-12 Standard Telephones Cables Ltd Injection laser
US4613387A (en) * 1983-02-28 1986-09-23 Itt Industries Inc. Injection laser manufacture
JPS6031288A (ja) * 1983-07-29 1985-02-18 Sharp Corp 半導体レ−ザ素子
JPS6080292A (ja) * 1983-10-07 1985-05-08 Matsushita Electric Ind Co Ltd 半導体レ−ザ
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPS60150682A (ja) * 1984-01-17 1985-08-08 Sharp Corp 半導体レ−ザ素子
US4660208A (en) * 1984-06-15 1987-04-21 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
JPS6184827A (ja) * 1984-10-02 1986-04-30 Sharp Corp 半導体装置の製造方法
US4647320A (en) * 1985-05-22 1987-03-03 Trw Inc. Method of making a surface emitting light emitting diode

Also Published As

Publication number Publication date
JPS60192380A (ja) 1985-09-30
EP0155152A2 (de) 1985-09-18
US4734385A (en) 1988-03-29
EP0155152A3 (en) 1987-04-15
EP0155152B1 (de) 1990-01-17
US4667332A (en) 1987-05-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee