DE68909632T2 - Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren. - Google Patents
Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.Info
- Publication number
- DE68909632T2 DE68909632T2 DE89301262T DE68909632T DE68909632T2 DE 68909632 T2 DE68909632 T2 DE 68909632T2 DE 89301262 T DE89301262 T DE 89301262T DE 68909632 T DE68909632 T DE 68909632T DE 68909632 T2 DE68909632 T2 DE 68909632T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor laser
- laser device
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/095—Laser devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/157—Special diffusion and profiles
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63026490A JP2685776B2 (ja) | 1988-02-09 | 1988-02-09 | 半導体発光素子及びその製造方法 |
JP11670488A JP2642403B2 (ja) | 1988-05-13 | 1988-05-13 | 半導体レーザの製造方法 |
JP63172312A JP2685818B2 (ja) | 1988-07-11 | 1988-07-11 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68909632D1 DE68909632D1 (de) | 1993-11-11 |
DE68909632T2 true DE68909632T2 (de) | 1994-03-10 |
Family
ID=27285427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89301262T Expired - Fee Related DE68909632T2 (de) | 1988-02-09 | 1989-02-09 | Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren. |
Country Status (3)
Country | Link |
---|---|
US (2) | US4922499A (de) |
EP (1) | EP0328393B1 (de) |
DE (1) | DE68909632T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5145792A (en) * | 1988-05-23 | 1992-09-08 | Optical Measurement Technology Development Co., Ltd. | Method of fabricating a semiconductor optical device |
US5181218A (en) * | 1988-12-14 | 1993-01-19 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor laser with non-absorbing mirror structure |
JP2831667B2 (ja) * | 1988-12-14 | 1998-12-02 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
CA2008379C (en) * | 1989-01-24 | 1993-08-31 | Hajime Sakiyama | Semiconductor lasers |
US5563094A (en) * | 1989-03-24 | 1996-10-08 | Xerox Corporation | Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same |
JP2752423B2 (ja) * | 1989-03-31 | 1998-05-18 | 三菱電機株式会社 | 化合物半導体へのZn拡散方法 |
US5048035A (en) * | 1989-05-31 | 1991-09-10 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US5153889A (en) * | 1989-05-31 | 1992-10-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US5065404A (en) * | 1989-07-12 | 1991-11-12 | Kabushiki Kaisha Toshiba | Transverse-mode oscillation semiconductor laser device |
EP0450255B1 (de) * | 1990-04-06 | 1994-07-06 | International Business Machines Corporation | Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers |
JP2566661B2 (ja) * | 1990-04-18 | 1996-12-25 | 三菱電機株式会社 | 不純物拡散方法 |
US5202895A (en) * | 1990-05-07 | 1993-04-13 | Kabushiki Kaisha Toshiba | Semiconductor device having an active layer made of ingaalp material |
US5190891A (en) * | 1990-06-05 | 1993-03-02 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating a semiconductor laser device in which the p-type clad layer and the active layer are grown at different rates |
JPH0449691A (ja) * | 1990-06-18 | 1992-02-19 | Mitsubishi Electric Corp | 可視光レーザダイオード |
US5161167A (en) * | 1990-06-21 | 1992-11-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
JP2971218B2 (ja) * | 1991-12-04 | 1999-11-02 | 協和醗酵工業株式会社 | ウリカーゼ遺伝子およびウリカーゼの製造法 |
JP3242967B2 (ja) * | 1992-01-31 | 2001-12-25 | 株式会社東芝 | 半導体発光素子 |
US5246878A (en) * | 1992-03-27 | 1993-09-21 | Bell Communications Research, Inc. | Capping layer preventing deleterious effects of As--P exchange |
US5625201A (en) * | 1994-12-12 | 1997-04-29 | Motorola | Multiwavelength LED devices and methods of fabrication |
US6346720B1 (en) * | 1995-02-03 | 2002-02-12 | Sumitomo Chemical Company, Limited | Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element |
JPH11163458A (ja) * | 1997-11-26 | 1999-06-18 | Mitsui Chem Inc | 半導体レーザ装置 |
JP2000031600A (ja) * | 1998-07-14 | 2000-01-28 | Nec Corp | 半導体レーザの製造方法 |
US6649942B2 (en) * | 2001-05-23 | 2003-11-18 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
US7741654B2 (en) * | 2004-09-16 | 2010-06-22 | Nec Corporation | Group III nitride semiconductor optical device |
KR20060034456A (ko) * | 2004-10-19 | 2006-04-24 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 그 제조방법 |
JP2010199520A (ja) * | 2009-02-27 | 2010-09-09 | Renesas Electronics Corp | 半導体レーザ及び半導体レーザの製造方法 |
DE102018123019A1 (de) * | 2018-09-19 | 2020-03-19 | Osram Opto Semiconductors Gmbh | Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1569369A (en) * | 1977-04-01 | 1980-06-11 | Standard Telephones Cables Ltd | Injection lasers |
JPS55154793A (en) * | 1979-05-22 | 1980-12-02 | Sharp Corp | Semiconductor laser element |
JPS5873178A (ja) * | 1981-10-27 | 1983-05-02 | Fujitsu Ltd | 半導体発光装置 |
US4517674A (en) * | 1982-08-31 | 1985-05-14 | The United States Of America As Represented By The Secretary Of The Navy | Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser |
JPS6014482A (ja) * | 1983-07-04 | 1985-01-25 | Toshiba Corp | 半導体レ−ザ装置 |
JPS6066891A (ja) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | 半導体レ−ザ装置 |
JPS60137088A (ja) * | 1983-12-26 | 1985-07-20 | Toshiba Corp | 半導体レ−ザ装置 |
JPS60192380A (ja) * | 1984-03-13 | 1985-09-30 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
CA1247947A (en) * | 1984-07-31 | 1989-01-03 | Masaru Wada | Method of manufacturing semiconductor device |
JPH0766992B2 (ja) * | 1984-12-21 | 1995-07-19 | ソニー株式会社 | AlGaInP系半導体レーザとその製造方法 |
JPS6216592A (ja) * | 1985-07-15 | 1987-01-24 | Nec Corp | 半導体発光素子 |
US4799228A (en) * | 1985-08-23 | 1989-01-17 | Kabushiki Kaisha Toshiba | Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide |
JPH0732285B2 (ja) * | 1986-02-28 | 1995-04-10 | 株式会社東芝 | 半導体レ−ザ装置 |
US4792958A (en) * | 1986-02-28 | 1988-12-20 | Kabushiki Kaisha Toshiba | Semiconductor laser with mesa stripe waveguide structure |
US4839307A (en) * | 1986-05-14 | 1989-06-13 | Omron Tateisi Electronics Co. | Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement |
DE3789695T2 (de) * | 1986-08-08 | 1994-08-25 | Toshiba Kawasaki Kk | Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter. |
JPH06216592A (ja) * | 1993-01-18 | 1994-08-05 | Toshiba Corp | 電子部品のリード矯正装置 |
-
1989
- 1989-02-09 DE DE89301262T patent/DE68909632T2/de not_active Expired - Fee Related
- 1989-02-09 US US07/307,927 patent/US4922499A/en not_active Expired - Lifetime
- 1989-02-09 EP EP89301262A patent/EP0328393B1/de not_active Expired - Lifetime
-
1990
- 1990-02-28 US US07/486,397 patent/US4987097A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4987097A (en) | 1991-01-22 |
DE68909632D1 (de) | 1993-11-11 |
EP0328393B1 (de) | 1993-10-06 |
US4922499A (en) | 1990-05-01 |
EP0328393A3 (en) | 1989-11-15 |
EP0328393A2 (de) | 1989-08-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |