DE69031660D1 - Lichtemittierende Halbleiteranordnung und deren Herstellungsverfahren - Google Patents

Lichtemittierende Halbleiteranordnung und deren Herstellungsverfahren

Info

Publication number
DE69031660D1
DE69031660D1 DE69031660T DE69031660T DE69031660D1 DE 69031660 D1 DE69031660 D1 DE 69031660D1 DE 69031660 T DE69031660 T DE 69031660T DE 69031660 T DE69031660 T DE 69031660T DE 69031660 D1 DE69031660 D1 DE 69031660D1
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69031660T
Other languages
English (en)
Other versions
DE69031660T2 (de
Inventor
Masahito Migita
Akira Taike
Masatoshi Shiiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1496289A external-priority patent/JPH02196485A/ja
Priority claimed from JP1057797A external-priority patent/JPH02238637A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69031660D1 publication Critical patent/DE69031660D1/de
Publication of DE69031660T2 publication Critical patent/DE69031660T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
DE69031660T 1989-01-26 1990-01-25 Lichtemittierende Halbleiteranordnung und deren Herstellungsverfahren Expired - Lifetime DE69031660T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1496289A JPH02196485A (ja) 1989-01-26 1989-01-26 半導体発光装置
JP1057797A JPH02238637A (ja) 1989-03-13 1989-03-13 ｐ型半導体膜及び半導体装置並びにそれらの製造方法

Publications (2)

Publication Number Publication Date
DE69031660D1 true DE69031660D1 (de) 1997-12-11
DE69031660T2 DE69031660T2 (de) 1998-06-10

Family

ID=26351012

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031660T Expired - Lifetime DE69031660T2 (de) 1989-01-26 1990-01-25 Lichtemittierende Halbleiteranordnung und deren Herstellungsverfahren

Country Status (3)

Country Link
US (2) US5081632A (de)
EP (1) EP0380106B1 (de)
DE (1) DE69031660T2 (de)

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US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
US5299217A (en) * 1990-10-11 1994-03-29 Hitachi, Ltd. Semiconductor light-emitting device with cadmium zinc selenide layer
US5375134A (en) * 1991-02-21 1994-12-20 Sony Corporation Semiconductor light emitting device
JP2784093B2 (ja) * 1991-02-21 1998-08-06 星和電機株式会社 半導体装置
US5274269A (en) * 1991-05-15 1993-12-28 Minnesota Mining And Manufacturing Company Ohmic contact for p-type group II-IV compound semiconductors
CN1119358A (zh) * 1991-05-15 1996-03-27 明尼苏达州采矿制造公司 蓝-绿激光二极管
BR9205993A (pt) * 1991-05-15 1994-08-02 Minnesota Mining & Mfg Diodo laser semicondutor, processo para produzir um contato ôhmico com um corpo semicondutor e contato ôhmico
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
US5291507A (en) * 1991-05-15 1994-03-01 Minnesota Mining And Manufacturing Company Blue-green laser diode
US5274248A (en) * 1991-06-05 1993-12-28 Matsushita Electric Industrial Co., Ltd. Light-emitting device with II-VI compounds
DE69218683T2 (de) * 1991-07-15 1997-11-13 Sony Corp Halbleiterlaser
US6001669A (en) * 1991-09-09 1999-12-14 Philips Electronics North America Corporation Method for producing II-VI compound semiconductor epitaxial layers having low defects
US5317583A (en) * 1991-12-26 1994-05-31 Principia Optics Incorporated Semiconductor laser screen of a cathode-ray tube
KR950007490B1 (ko) * 1991-12-28 1995-07-11 엘지전자주식회사 반도체 레이저
US5260958A (en) * 1991-12-31 1993-11-09 North American Philips Corporation Materials for II-VI lasers
US5351255A (en) * 1992-05-12 1994-09-27 North Carolina State University Of Raleigh Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
WO1993023882A1 (en) * 1992-05-19 1993-11-25 California Institute Of Technology Wide band-gap semiconductor light emitters
US5319219A (en) * 1992-05-22 1994-06-07 Minnesota Mining And Manufacturing Company Single quantum well II-VI laser diode without cladding
US5354708A (en) * 1992-06-04 1994-10-11 Taskar Nikhil R Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine
JP3278951B2 (ja) * 1992-10-23 2002-04-30 ソニー株式会社 オーミック電極の形成方法
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
JPH0773140B2 (ja) * 1993-02-09 1995-08-02 日本電気株式会社 半導体レーザ
US5547897A (en) * 1993-07-14 1996-08-20 Philips Electronics North America Corporation Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
US5379313A (en) * 1993-08-31 1995-01-03 Nec Research Institute, Inc. Semiconductive devices utilizing MgTe, MgSe, ZnSe, ZnTe and alloys thereof
KR950010253A (ko) * 1993-09-07 1995-04-26 오가 노리오 반도체발광장치
JPH08115877A (ja) * 1994-10-17 1996-05-07 Sony Corp 半導体エピタキシャル成長方法
US5544190A (en) * 1994-11-17 1996-08-06 Phillips Electronics North America Corporation II-VI Semiconductor diode laser with lateral current confinement
US5540786A (en) * 1995-03-21 1996-07-30 The Hong Kong University Of Science & Technology Light emitting material
US5742629A (en) * 1995-07-21 1998-04-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and production method thereof
JPH0997803A (ja) * 1995-09-29 1997-04-08 Sony Corp カドミウムを含むｉｉ−ｖｉ族化合物半導体層およびその成長方法
US5677923A (en) * 1996-01-11 1997-10-14 Mcdonnell Douglas Corporation Vertical cavity electron beam pumped semiconductor lasers and methods
US5946542A (en) * 1996-02-26 1999-08-31 Micron Technology, Inc. Method of depositing passivation layers on semiconductor device arrays
JP2803722B2 (ja) * 1996-05-10 1998-09-24 日本電気株式会社 半導体装置及びその製造方法
US5776793A (en) * 1996-06-27 1998-07-07 National Science Council Method of fabricating opto-electronic device
US6362483B1 (en) * 1998-12-29 2002-03-26 The Hong Kong University Of Science & Technology Visible-blind UV detectors
US20050041433A1 (en) * 2003-08-18 2005-02-24 Visteon Global Technologies, Inc. Automotive lighting system
JP4920221B2 (ja) * 2005-09-05 2012-04-18 学校法人上智学院 ＩｎＰ基板を有する光半導体装置
CN102602984B (zh) * 2012-03-22 2013-07-31 合肥工业大学 一种P型掺杂ZnSxSe1-x纳米材料及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4735910A (en) * 1985-09-19 1988-04-05 Matsushita Electric Industrial Co., Ltd. In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate
JPS62101089A (ja) * 1985-10-28 1987-05-11 Seiko Epson Corp 青色発光素子
JPH0697704B2 (ja) * 1986-01-27 1994-11-30 シャープ株式会社 ＭＩＳ型ＺｎＳ青色発光素子
JPS62211971A (ja) * 1986-03-12 1987-09-17 Seiko Epson Corp 半導体発光装置
JPS637692A (ja) * 1986-06-27 1988-01-13 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2723227B2 (ja) * 1986-09-26 1998-03-09 株式会社東芝 半導体発光素子の製造方法
JPS63205920A (ja) * 1987-02-23 1988-08-25 Toshiba Corp 分子線エピタキシヤル成長法
JPS63237590A (ja) * 1987-03-26 1988-10-04 Toshiba Corp 半導体発光素子
DE3810245A1 (de) * 1987-03-27 1988-10-06 Japan Incubator Inc Lichtemittierendes element und verfahren zu seiner herstellung
US4955031A (en) * 1988-07-12 1990-09-04 University Of Connecticut Metal insulator semiconductor heterostructure lasers
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device

Also Published As

Publication number Publication date
EP0380106B1 (de) 1997-11-05
EP0380106A2 (de) 1990-08-01
EP0380106A3 (de) 1991-09-18
DE69031660T2 (de) 1998-06-10
US5081632A (en) 1992-01-14
US5278856A (en) 1994-01-11

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