DE69026194D1 - Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren - Google Patents
Lichtemittierende Halbleitervorrichtung und HerstellungsverfahrenInfo
- Publication number
- DE69026194D1 DE69026194D1 DE69026194T DE69026194T DE69026194D1 DE 69026194 D1 DE69026194 D1 DE 69026194D1 DE 69026194 T DE69026194 T DE 69026194T DE 69026194 T DE69026194 T DE 69026194T DE 69026194 D1 DE69026194 D1 DE 69026194D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- light emitting
- emitting device
- semiconductor light
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1268782A JPH03129892A (ja) | 1989-10-16 | 1989-10-16 | 半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69026194D1 true DE69026194D1 (de) | 1996-05-02 |
DE69026194T2 DE69026194T2 (de) | 1996-09-05 |
Family
ID=17463210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69026194T Expired - Lifetime DE69026194T2 (de) | 1989-10-16 | 1990-10-15 | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0427003B1 (de) |
JP (1) | JPH03129892A (de) |
KR (1) | KR930010127B1 (de) |
DE (1) | DE69026194T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3124694B2 (ja) * | 1995-02-15 | 2001-01-15 | 三菱電線工業株式会社 | 半導体発光素子 |
JP2008008530A (ja) * | 2006-06-28 | 2008-01-17 | Hokuetsu Denken Kk | 遠赤外線乾燥装置 |
DE102007062050B4 (de) | 2007-09-28 | 2019-06-27 | Osram Opto Semiconductors Gmbh | Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers |
DE102012110836A1 (de) * | 2012-11-12 | 2014-02-27 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6381886A (ja) * | 1986-09-25 | 1988-04-12 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
JPS63124592A (ja) * | 1986-11-14 | 1988-05-28 | Nec Corp | 半導体レ−ザ装置 |
US5034957A (en) * | 1988-02-10 | 1991-07-23 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
JP2685209B2 (ja) * | 1988-03-25 | 1997-12-03 | 株式会社東芝 | 半導体装置及び半導体発光装置 |
-
1989
- 1989-10-16 JP JP1268782A patent/JPH03129892A/ja active Granted
-
1990
- 1990-10-15 KR KR1019900016339A patent/KR930010127B1/ko not_active IP Right Cessation
- 1990-10-15 DE DE69026194T patent/DE69026194T2/de not_active Expired - Lifetime
- 1990-10-15 EP EP90119687A patent/EP0427003B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0427003B1 (de) | 1996-03-27 |
KR930010127B1 (ko) | 1993-10-14 |
DE69026194T2 (de) | 1996-09-05 |
JPH0572118B2 (de) | 1993-10-08 |
EP0427003A1 (de) | 1991-05-15 |
JPH03129892A (ja) | 1991-06-03 |
KR910008873A (ko) | 1991-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |