DE69412946D1 - Lichtemittierende Halbleiterdiode und Herstellungsverfahren - Google Patents

Lichtemittierende Halbleiterdiode und Herstellungsverfahren

Info

Publication number
DE69412946D1
DE69412946D1 DE69412946T DE69412946T DE69412946D1 DE 69412946 D1 DE69412946 D1 DE 69412946D1 DE 69412946 T DE69412946 T DE 69412946T DE 69412946 T DE69412946 T DE 69412946T DE 69412946 D1 DE69412946 D1 DE 69412946D1
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting diode
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69412946T
Other languages
English (en)
Other versions
DE69412946T2 (de
Inventor
Der Poel Carolus Johannes Van
Adriaan Valster
Hubertus Petrus Mech Ambrosius
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69412946D1 publication Critical patent/DE69412946D1/de
Publication of DE69412946T2 publication Critical patent/DE69412946T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE69412946T 1993-06-28 1994-06-22 Lichtemittierende Halbleiterdiode und Herstellungsverfahren Expired - Fee Related DE69412946T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE9300664A BE1007251A3 (nl) 1993-06-28 1993-06-28 Straling-emitterende halfgeleiderdiode en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
DE69412946D1 true DE69412946D1 (de) 1998-10-08
DE69412946T2 DE69412946T2 (de) 2000-02-24

Family

ID=3887135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69412946T Expired - Fee Related DE69412946T2 (de) 1993-06-28 1994-06-22 Lichtemittierende Halbleiterdiode und Herstellungsverfahren

Country Status (8)

Country Link
US (1) US5545903A (de)
EP (1) EP0637112B1 (de)
JP (1) JPH0722713A (de)
CN (1) CN1099906A (de)
AU (1) AU675531B2 (de)
BE (1) BE1007251A3 (de)
DE (1) DE69412946T2 (de)
TW (1) TW299516B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288544A (ja) 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
KR100357979B1 (ko) * 1996-01-08 2003-01-15 삼성전자 주식회사 반도체 레이저 다이오드 및 그 제조 방법
JP2002075880A (ja) * 2000-09-01 2002-03-15 Sanyo Electric Co Ltd 窒化物系半導体層の形成方法および窒化物系半導体素子の製造方法
US6944197B2 (en) * 2001-06-26 2005-09-13 University Of Maryland, Baltimore County Low crosstalk optical gain medium and method for forming same
JP2003273467A (ja) * 2002-03-15 2003-09-26 Toshiba Corp 半導体レーザおよびその製造方法
JP2007129270A (ja) * 2007-02-09 2007-05-24 Sharp Corp 半導体レーザ素子及びその製造方法
KR100962898B1 (ko) 2008-11-14 2010-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
USRE48774E1 (en) 2008-11-14 2021-10-12 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor light emitting device
JP5586371B2 (ja) * 2009-09-15 2014-09-10 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
TWI447954B (zh) 2009-09-15 2014-08-01 Showa Denko Kk 發光二極體、發光二極體燈及照明裝置
JP2011222950A (ja) * 2010-03-24 2011-11-04 Showa Denko Kk 発光ダイオード
JP5586372B2 (ja) * 2010-08-10 2014-09-10 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
JP2012119585A (ja) 2010-12-02 2012-06-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
JP2012186194A (ja) * 2011-03-03 2012-09-27 Showa Denko Kk 発光ダイオード
DE102011114380A1 (de) * 2011-09-23 2013-03-28 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
JP5842520B2 (ja) * 2011-09-30 2016-01-13 三菱電機株式会社 半導体レーザ及びその製造方法
CN102610472B (zh) * 2012-04-01 2014-12-24 南京理工大学 峰值响应在532 nm敏感的反射式GaAlAs光电阴极及其制备方法
JP6101303B2 (ja) * 2015-04-30 2017-03-22 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
WO2019022960A1 (en) * 2017-07-28 2019-01-31 Lumileds Llc CONSTRAINTS OF ALGAINP FOR EFFICIENT BLOCKING OF ELECTRON AND HOLES IN LIGHT EMITTING DEVICES
US11552217B2 (en) * 2018-11-12 2023-01-10 Epistar Corporation Semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61100991A (ja) * 1984-10-22 1986-05-19 Sharp Corp 半導体レ−ザ素子
JPH0821748B2 (ja) * 1985-09-04 1996-03-04 株式会社日立製作所 半導体レ−ザ装置
JPS63197391A (ja) * 1987-02-12 1988-08-16 Hitachi Ltd 半導体レ−ザ装置
JP2703784B2 (ja) * 1988-11-08 1998-01-26 シャープ株式会社 半導体レーザ素子
JPH02134887A (ja) * 1988-11-16 1990-05-23 Hitachi Ltd 半導体レーザ素子及びその製造方法
JP3242967B2 (ja) * 1992-01-31 2001-12-25 株式会社東芝 半導体発光素子
US5222090A (en) * 1992-03-05 1993-06-22 Mcdonnell Douglas Corporation 700-850 nanometer semiconductor diode laser

Also Published As

Publication number Publication date
JPH0722713A (ja) 1995-01-24
EP0637112A1 (de) 1995-02-01
DE69412946T2 (de) 2000-02-24
CN1099906A (zh) 1995-03-08
AU6590194A (en) 1995-01-05
BE1007251A3 (nl) 1995-05-02
EP0637112B1 (de) 1998-09-02
AU675531B2 (en) 1997-02-06
TW299516B (de) 1997-03-01
US5545903A (en) 1996-08-13

Similar Documents

Publication Publication Date Title
DE69412946D1 (de) Lichtemittierende Halbleiterdiode und Herstellungsverfahren
DE69408374D1 (de) Lichtemittierende Halbleitervorrichtung
DE69533276D1 (de) Lichtemittierende Halbleitervorrichtungen
DE69031660D1 (de) Lichtemittierende Halbleiteranordnung und deren Herstellungsverfahren
DE69127677D1 (de) Lichtemittierende Halbleiterdioden
GB2293919B (en) Semiconductor light emitting diode
DE69601477D1 (de) Halbleiterlaserdiode und deren Herstellungsverfahren
DE69331554D1 (de) Lichtemittierende Diode
IT1277977B1 (it) Dispositivi organici di emissione di luce multicolore
DE69517614D1 (de) Halbleiterdiodenlaser und dessen Herstellungsverfahren
DE69428578D1 (de) Herstellungsverfahren für lichtemittierenden Halbleitervorrichtungen
DE69314816D1 (de) Lichtemittierende Halbleitervorrichtung
KR900011086A (ko) 반도체 다이오드 레이저 및 그 제조방법
DE69708247D1 (de) Laserdiodenanordnung und Herstellungsverfahren
DE69525128D1 (de) Lichtemittierende Halbleiteranordnung und Herstellungsverfahren
DE69432345D1 (de) Halbleiterdiodenlaser
DE69308045D1 (de) Lichtemittierende Halbleitervorrichtung
DE69506043D1 (de) Lichtemittierende Halbleitervorrichtung
DE69625384D1 (de) Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
DE69428556D1 (de) Lichtemittierende II-VI-Halbleitervorrichtung und deren Herstellungsmethode
DE69510529D1 (de) Strahlungsemittierende halbleiter-diode und herstellungsverfahren
KR970004181A (ko) 면발광 반도체 레이저 다이오드 및 그 제조방법
EP0617470A3 (de) Licht emittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung.
DE69428835D1 (de) Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
DE69420202D1 (de) Lichtemittierende Halbleitervorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Free format text: E. TERGAU UND KOLLEGEN, 90482 NUERNBERG

8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee