DE69314816D1 - Lichtemittierende Halbleitervorrichtung - Google Patents

Lichtemittierende Halbleitervorrichtung

Info

Publication number
DE69314816D1
DE69314816D1 DE69314816T DE69314816T DE69314816D1 DE 69314816 D1 DE69314816 D1 DE 69314816D1 DE 69314816 T DE69314816 T DE 69314816T DE 69314816 T DE69314816 T DE 69314816T DE 69314816 D1 DE69314816 D1 DE 69314816D1
Authority
DE
Germany
Prior art keywords
light emitting
emitting device
semiconductor light
semiconductor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69314816T
Other languages
English (en)
Other versions
DE69314816T2 (de
Inventor
Kazuhiko Itaya
Koichi Nitta
Genichi Hatakoshi
Yukie Nishikawa
Hideto Sugawara
Mariko Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69314816D1 publication Critical patent/DE69314816D1/de
Publication of DE69314816T2 publication Critical patent/DE69314816T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
DE69314816T 1992-01-31 1993-01-28 Lichtemittierende Halbleitervorrichtung Expired - Lifetime DE69314816T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1693292A JP3242967B2 (ja) 1992-01-31 1992-01-31 半導体発光素子

Publications (2)

Publication Number Publication Date
DE69314816D1 true DE69314816D1 (de) 1997-12-04
DE69314816T2 DE69314816T2 (de) 1998-03-12

Family

ID=11929898

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69314816T Expired - Lifetime DE69314816T2 (de) 1992-01-31 1993-01-28 Lichtemittierende Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5321712A (de)
EP (1) EP0554089B1 (de)
JP (1) JP3242967B2 (de)
DE (1) DE69314816T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2112319C (en) * 1992-12-28 1999-01-05 Ichiro Yoshida Semiconductor laser having an algainp cladding layer
BE1007251A3 (nl) * 1993-06-28 1995-05-02 Philips Electronics Nv Straling-emitterende halfgeleiderdiode en werkwijze ter vervaardiging daarvan.
US5646953A (en) * 1994-04-06 1997-07-08 Matsushita Electronics Corporation Semiconductor laser device
JPH08288544A (ja) * 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
JPH0964452A (ja) * 1995-08-18 1997-03-07 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
US5663976A (en) * 1995-10-16 1997-09-02 Northwestern University Buried-ridge laser device
US5727012A (en) * 1996-03-07 1998-03-10 Lucent Technologies Inc. Heterostructure laser
US7050472B2 (en) * 2000-03-01 2006-05-23 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for manufacturing the same
EP1195864A3 (de) 2000-10-04 2004-11-10 Matsushita Electric Industrial Co., Ltd. Halbleiterlaservorrichtung
JP4886947B2 (ja) * 2000-10-04 2012-02-29 パナソニック株式会社 半導体レーザ装置
JP4050887B2 (ja) * 2001-09-20 2008-02-20 シャープ株式会社 半導体発光素子およびその製造方法
JP2004349286A (ja) 2003-05-20 2004-12-09 Matsushita Electric Ind Co Ltd 半導体レーザ素子、半導体レーザ装置、光ピックアップ装置及び半導体レーザ装置の製造方法
US7244630B2 (en) * 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
JP2006332623A (ja) * 2005-04-27 2006-12-07 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US7391798B2 (en) 2005-04-27 2008-06-24 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
JP2007129270A (ja) * 2007-02-09 2007-05-24 Sharp Corp 半導体レーザ素子及びその製造方法
JP4771997B2 (ja) * 2007-06-20 2011-09-14 シャープ株式会社 半導体発光素子およびその製造方法
JP4903643B2 (ja) * 2007-07-12 2012-03-28 株式会社東芝 半導体発光素子
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
JP5323802B2 (ja) * 2010-12-13 2013-10-23 ローム株式会社 半導体レーザ素子
US8599895B2 (en) 2011-01-27 2013-12-03 Rohm Co., Ltd. Semiconductor laser device and manufacturing method thereof
JP5323879B2 (ja) * 2011-01-27 2013-10-23 ローム株式会社 半導体レーザ素子
US8446927B2 (en) 2011-01-27 2013-05-21 Rohm Co., Ltd. Semiconductor laser device and manufacturing method thereof
JP6178990B2 (ja) 2012-10-31 2017-08-16 パナソニックＩｐマネジメント株式会社 半導体発光装置およびその製造方法
TWI780167B (zh) * 2018-06-26 2022-10-11 晶元光電股份有限公司 半導體基底以及半導體元件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050983A (ja) * 1983-08-30 1985-03-22 Sharp Corp 半導体レ−ザ素子の製造方法
JPH0821748B2 (ja) * 1985-09-04 1996-03-04 株式会社日立製作所 半導体レ−ザ装置
DE3789695T2 (de) * 1986-08-08 1994-08-25 Toshiba Kawasaki Kk Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter.
DE68909632T2 (de) * 1988-02-09 1994-03-10 Toshiba Kawasaki Kk Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
FR2628575A1 (fr) * 1988-03-11 1989-09-15 Thomson Csf Laser de puissance a 0,808 micrometres de longueur d'onde pour pompage du laser yag
JP2807250B2 (ja) * 1989-02-22 1998-10-08 株式会社東芝 半導体レーザ装置
JPH0319718A (ja) * 1989-06-16 1991-01-28 Sumitomo Metal Ind Ltd サイドトリム装置
DE69033518T2 (de) * 1989-07-12 2000-12-21 Toshiba Kawasaki Kk Im transversalen Mode schwingender Halbleiterlaser

Also Published As

Publication number Publication date
DE69314816T2 (de) 1998-03-12
EP0554089B1 (de) 1997-10-29
JP3242967B2 (ja) 2001-12-25
EP0554089A1 (de) 1993-08-04
US5321712A (en) 1994-06-14
JPH05218582A (ja) 1993-08-27

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