DE69308045D1 - Lichtemittierende Halbleitervorrichtung - Google Patents
Lichtemittierende HalbleitervorrichtungInfo
- Publication number
- DE69308045D1 DE69308045D1 DE69308045T DE69308045T DE69308045D1 DE 69308045 D1 DE69308045 D1 DE 69308045D1 DE 69308045 T DE69308045 T DE 69308045T DE 69308045 T DE69308045 T DE 69308045T DE 69308045 D1 DE69308045 D1 DE 69308045D1
- Authority
- DE
- Germany
- Prior art keywords
- light emitting
- emitting device
- semiconductor light
- semiconductor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4580892A JP2798545B2 (ja) | 1992-03-03 | 1992-03-03 | 半導体発光素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69308045D1 true DE69308045D1 (de) | 1997-03-27 |
DE69308045T2 DE69308045T2 (de) | 1997-08-07 |
Family
ID=12729562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69308045T Expired - Fee Related DE69308045T2 (de) | 1992-03-03 | 1993-03-03 | Lichtemittierende Halbleitervorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5404031A (de) |
EP (1) | EP0559455B1 (de) |
JP (1) | JP2798545B2 (de) |
DE (1) | DE69308045T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0832110A (ja) * | 1994-07-19 | 1996-02-02 | Oki Electric Ind Co Ltd | 端面発光型led、端面発光型発光素子の製造方法、端面発光型発光素子の発光特性測定方法 |
US5814839A (en) * | 1995-02-16 | 1998-09-29 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same |
KR100264424B1 (ko) * | 1995-06-21 | 2000-08-16 | 사토 게니치로 | 발광 다이오드칩 및 이를 사용한 발광 다이오드 |
JPH0945993A (ja) * | 1995-07-28 | 1997-02-14 | Sony Corp | 半導体発光素子 |
US6633120B2 (en) | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
US8587020B2 (en) | 1997-11-19 | 2013-11-19 | Epistar Corporation | LED lamps |
JPH11224960A (ja) | 1997-11-19 | 1999-08-17 | Unisplay Sa | Ledランプ並びにledチップ |
US6441393B2 (en) * | 1999-11-17 | 2002-08-27 | Lumileds Lighting U.S., Llc | Semiconductor devices with selectively doped III-V nitride layers |
JP4670183B2 (ja) * | 2000-09-18 | 2011-04-13 | 株式会社デンソー | 発光素子の駆動方法 |
US7211833B2 (en) | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
DE10162914B4 (de) * | 2001-12-20 | 2010-06-24 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiterbauelement |
US7795623B2 (en) * | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
US7557380B2 (en) | 2004-07-27 | 2009-07-07 | Cree, Inc. | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US8174037B2 (en) * | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
JP2006108187A (ja) * | 2004-09-30 | 2006-04-20 | Dowa Mining Co Ltd | 発光ダイオード及びその製造方法 |
US7335920B2 (en) * | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
DE102007046519A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung |
US9472719B2 (en) * | 2015-02-18 | 2016-10-18 | Epistar Corporation | Light-emitting diode |
CN107546303B (zh) * | 2017-08-25 | 2019-06-21 | 扬州乾照光电有限公司 | 一种AlGaInP基发光二极管及其制造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55158691A (en) * | 1979-05-30 | 1980-12-10 | Sumitomo Electric Ind Ltd | Semiconductor light emitting device manufacture thereof |
JPS57162382A (en) * | 1981-03-30 | 1982-10-06 | Sumitomo Electric Ind Ltd | Semiconductor laser |
US4831630A (en) * | 1983-04-14 | 1989-05-16 | Xerox Corporation | Phased-locked window lasers |
JPS59219976A (ja) * | 1983-05-30 | 1984-12-11 | Mitsubishi Electric Corp | 半導体レ−ザ装置およびその製造方法 |
JPS60235486A (ja) * | 1984-05-08 | 1985-11-22 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置およびその製造方法 |
JPS61281562A (ja) * | 1985-06-06 | 1986-12-11 | Oki Electric Ind Co Ltd | 半導体発光素子 |
JPS61287289A (ja) * | 1985-06-14 | 1986-12-17 | Sharp Corp | 光メモリ用半導体レ−ザ装置 |
JPS6393188A (ja) * | 1986-10-07 | 1988-04-23 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
JP2766311B2 (ja) * | 1989-05-31 | 1998-06-18 | 株式会社東芝 | 半導体発光装置 |
JP3117203B2 (ja) * | 1989-08-31 | 2000-12-11 | 株式会社東芝 | 発光ダイオードおよびその製造方法 |
US5048035A (en) * | 1989-05-31 | 1991-09-10 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
JPH0770757B2 (ja) * | 1989-10-17 | 1995-07-31 | 株式会社東芝 | 半導体発光素子 |
US5132750A (en) * | 1989-11-22 | 1992-07-21 | Daido Tokushuko Kabushiki Kaisha | Light-emitting diode having light reflecting layer |
US5208821A (en) * | 1992-01-24 | 1993-05-04 | At&T Bell Laboratories | Buried heterostructure lasers using MOCVD growth over patterned substrates |
-
1992
- 1992-03-03 JP JP4580892A patent/JP2798545B2/ja not_active Expired - Fee Related
-
1993
- 1993-03-03 DE DE69308045T patent/DE69308045T2/de not_active Expired - Fee Related
- 1993-03-03 EP EP93301623A patent/EP0559455B1/de not_active Expired - Lifetime
-
1994
- 1994-07-01 US US08/270,115 patent/US5404031A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0559455B1 (de) | 1997-02-12 |
US5404031A (en) | 1995-04-04 |
JP2798545B2 (ja) | 1998-09-17 |
EP0559455A1 (de) | 1993-09-08 |
DE69308045T2 (de) | 1997-08-07 |
JPH05243606A (ja) | 1993-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |