DE69533276D1 - Lichtemittierende Halbleitervorrichtungen - Google Patents

Lichtemittierende Halbleitervorrichtungen

Info

Publication number
DE69533276D1
DE69533276D1 DE69533276T DE69533276T DE69533276D1 DE 69533276 D1 DE69533276 D1 DE 69533276D1 DE 69533276 T DE69533276 T DE 69533276T DE 69533276 T DE69533276 T DE 69533276T DE 69533276 D1 DE69533276 D1 DE 69533276D1
Authority
DE
Germany
Prior art keywords
light emitting
semiconductor light
emitting devices
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69533276T
Other languages
English (en)
Other versions
DE69533276T2 (de
Inventor
Kenji Shimoyama
Nobuyuki Hosoi
Katsushi Fujii
Atsunori Yamauchi
Hideki Gotoh
Yoshihito Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of DE69533276D1 publication Critical patent/DE69533276D1/de
Application granted granted Critical
Publication of DE69533276T2 publication Critical patent/DE69533276T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
DE69533276T 1994-09-01 1995-09-01 Lichtemittierende Halbleitervorrichtungen Expired - Fee Related DE69533276T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP20867194 1994-09-01
JP20867294 1994-09-01
JP20867294 1994-09-01
JP20867194 1994-09-01
JP25828094 1994-10-24
JP25828094 1994-10-24

Publications (2)

Publication Number Publication Date
DE69533276D1 true DE69533276D1 (de) 2004-08-26
DE69533276T2 DE69533276T2 (de) 2005-09-01

Family

ID=27328914

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69533276T Expired - Fee Related DE69533276T2 (de) 1994-09-01 1995-09-01 Lichtemittierende Halbleitervorrichtungen

Country Status (4)

Country Link
US (2) US5811839A (de)
EP (2) EP1263101A3 (de)
DE (1) DE69533276T2 (de)
TW (2) TW381350B (de)

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EP0844674A4 (de) * 1996-05-30 1999-09-22 Rohm Co Ltd Lichtemittierende halbleitervorrichtung und herstellungsverfahren
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JP3763667B2 (ja) * 1998-04-23 2006-04-05 株式会社東芝 半導体発光素子
US20010020703A1 (en) * 1998-07-24 2001-09-13 Nathan F. Gardner Algainp light emitting devices with thin active layers
JP3881470B2 (ja) * 1999-01-05 2007-02-14 ローム株式会社 半導体発光素子の製法
JP3472714B2 (ja) * 1999-01-25 2003-12-02 シャープ株式会社 半導体発光素子の製造方法
US6133589A (en) 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6346719B1 (en) * 1999-06-24 2002-02-12 Showa Denko Kabushiki Kaisha AlGaInP light-emitting diode
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6885035B2 (en) 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6903376B2 (en) 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
JP3685977B2 (ja) 2000-04-21 2005-08-24 シャープ株式会社 半導体発光素子およびその製造方法
US6420732B1 (en) 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
JP4102554B2 (ja) * 2000-10-31 2008-06-18 シャープ株式会社 半導体レーザ素子及びその製造方法
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6563142B2 (en) * 2001-07-11 2003-05-13 Lumileds Lighting, U.S., Llc Reducing the variation of far-field radiation patterns of flipchip light emitting diodes
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
TW554601B (en) * 2001-07-26 2003-09-21 Matsushita Electric Ind Co Ltd Semiconductor laser device and method for fabricating the same
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6777257B2 (en) * 2002-05-17 2004-08-17 Shin-Etsu Handotai Co., Ltd. Method of fabricating a light emitting device and light emitting device
JP4262549B2 (ja) * 2003-07-22 2009-05-13 シャープ株式会社 半導体レーザ素子およびその製造方法
JP4092658B2 (ja) * 2004-04-27 2008-05-28 信越半導体株式会社 発光素子の製造方法
KR20050110902A (ko) * 2004-05-20 2005-11-24 삼성전기주식회사 반도체 레이저 다이오드
JP2006108405A (ja) * 2004-10-06 2006-04-20 Sharp Corp 半導体レーザ素子およびモノリシック２波長半導体レーザ装置
JP2007049088A (ja) * 2005-08-12 2007-02-22 Rohm Co Ltd 高出力赤色半導体レーザ
GB2451456B (en) * 2007-07-31 2011-03-02 Filtronic Compound Semiconductors Ltd An optical waveguide structure and method of manufacture thereof
JP5125433B2 (ja) * 2007-11-09 2013-01-23 サンケン電気株式会社 半導体発光装置及びその製造方法
JP5608589B2 (ja) * 2011-03-10 2014-10-15 スタンレー電気株式会社 半導体発光素子および半導体発光素子の製造方法
JP5978669B2 (ja) * 2012-03-15 2016-08-24 富士ゼロックス株式会社 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置

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JPS6191991A (ja) * 1984-10-12 1986-05-10 Nec Corp 半導体レ−ザ
JPH0654821B2 (ja) * 1985-06-05 1994-07-20 日本電気株式会社 半導体発光素子
JPH0722214B2 (ja) * 1985-07-18 1995-03-08 シャープ株式会社 半導体レーザ素子の製造方法
JPH0728084B2 (ja) * 1985-07-26 1995-03-29 ソニー株式会社 半導体レーザー
JPS63233587A (ja) * 1987-03-23 1988-09-29 Mitsubishi Electric Corp 半導体レ−ザ装置
US4764934A (en) * 1987-07-27 1988-08-16 Ortel Corporation Superluminescent diode and single mode laser
JPH01268179A (ja) * 1988-04-20 1989-10-25 Toshiba Corp 半導体レーザ素子
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
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JPH03112186A (ja) * 1989-09-26 1991-05-13 Nec Corp ＡｌＧａＩｎＰ可視光半導体レーザ
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JPH0448669A (ja) * 1990-06-14 1992-02-18 Fujitsu Ltd 半導体レーザ装置及びその製造方法
JPH04212497A (ja) * 1990-06-20 1992-08-04 Mitsubishi Electric Corp 電子部材収納筺体
US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
JP2997573B2 (ja) * 1991-02-19 2000-01-11 株式会社東芝 半導体レーザ装置
JP3129779B2 (ja) * 1991-08-30 2001-01-31 株式会社東芝 半導体レーザ装置
EP0540799A1 (de) * 1991-11-04 1993-05-12 International Business Machines Corporation Verbesserte, sichtbares licht emittierende, AlGaInP-Dioden
US5233204A (en) * 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
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US5416790A (en) * 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
JPH0738150A (ja) * 1993-07-22 1995-02-07 Toshiba Corp 半導体発光装置
JPH07193333A (ja) * 1993-12-27 1995-07-28 Mitsubishi Chem Corp 半導体発光素子
US5481122A (en) * 1994-07-25 1996-01-02 Industrial Technology Research Institute Surface light emitting diode with electrically conductive window layer
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US5565694A (en) * 1995-07-10 1996-10-15 Huang; Kuo-Hsin Light emitting diode with current blocking layer

Also Published As

Publication number Publication date
EP1263101A2 (de) 2002-12-04
EP0702414A3 (de) 1997-10-29
EP0702414B1 (de) 2004-07-21
EP0702414A2 (de) 1996-03-20
DE69533276T2 (de) 2005-09-01
EP1263101A3 (de) 2004-07-07
TW364213B (en) 1999-07-11
TW381350B (en) 2000-02-01
US5811839A (en) 1998-09-22
US6278137B1 (en) 2001-08-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee