DE69700573T2 - Optoelektronische Halbleitervorrichtung - Google Patents

Optoelektronische Halbleitervorrichtung

Info

Publication number
DE69700573T2
DE69700573T2 DE69700573T DE69700573T DE69700573T2 DE 69700573 T2 DE69700573 T2 DE 69700573T2 DE 69700573 T DE69700573 T DE 69700573T DE 69700573 T DE69700573 T DE 69700573T DE 69700573 T2 DE69700573 T2 DE 69700573T2
Authority
DE
Germany
Prior art keywords
semiconductor device
optoelectronic semiconductor
optoelectronic
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69700573T
Other languages
English (en)
Other versions
DE69700573D1 (de
Inventor
Stephen Peter Najda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69700573D1 publication Critical patent/DE69700573D1/de
Publication of DE69700573T2 publication Critical patent/DE69700573T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12104—Mirror; Reflectors or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE69700573T 1996-03-13 1997-03-12 Optoelektronische Halbleitervorrichtung Expired - Lifetime DE69700573T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9605288A GB2311166A (en) 1996-03-13 1996-03-13 An optoelectronic semiconductor device

Publications (2)

Publication Number Publication Date
DE69700573D1 DE69700573D1 (de) 1999-11-11
DE69700573T2 true DE69700573T2 (de) 2000-05-31

Family

ID=10790323

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69700573T Expired - Lifetime DE69700573T2 (de) 1996-03-13 1997-03-12 Optoelektronische Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US6137819A (de)
EP (1) EP0795941B1 (de)
JP (1) JP3418082B2 (de)
DE (1) DE69700573T2 (de)
GB (1) GB2311166A (de)

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US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
GB9815271D0 (en) * 1998-07-14 1998-09-09 Cambridge Display Tech Ltd Particles and devices comprising particles
JP3423232B2 (ja) * 1998-11-30 2003-07-07 三洋電機株式会社 アクティブ型ｅｌ表示装置
US6849869B1 (en) * 1999-07-19 2005-02-01 Dupont Displays, Inc. Long lifetime polymer light-emitting devices with improved luminous efficiency and improved radiance
GB2356713A (en) * 1999-11-26 2001-05-30 Seiko Epson Corp Distributed Bragg reflector
US6665109B2 (en) 2000-03-20 2003-12-16 Np Photonics, Inc. Compliant mechanism and method of forming same
US6519074B2 (en) 2000-03-20 2003-02-11 Parvenu, Inc. Electrostatically-actuated tunable optical components using entropic materials
US6678084B2 (en) 2000-03-20 2004-01-13 Np Photonics, Inc. Methods of making mechanisms in which relative locations of elements are maintained during manufacturing
US6597461B1 (en) 2000-03-20 2003-07-22 Parvenu, Inc. Tunable fabry-perot interferometer using entropic materials
US6747784B2 (en) 2000-03-20 2004-06-08 Np Photonics, Inc. Compliant mechanism and method of forming same
US6747775B2 (en) * 2000-03-20 2004-06-08 Np Photonics, Inc. Detunable Fabry-Perot interferometer and an add/drop multiplexer using the same
JP2002076513A (ja) * 2000-09-01 2002-03-15 Fujitsu Ltd 温度無依存分布ブラッグ反射型ミラー及び面型光学素子
US6727520B2 (en) * 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
KR100404043B1 (ko) * 2001-10-19 2003-11-03 주식회사 비첼 수직으로 집적화된 고출력 면발광 반도체 레이저 장치 및그 제조 방법
US7091653B2 (en) 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US7312560B2 (en) 2003-01-27 2007-12-25 3M Innovative Properties Phosphor based light sources having a non-planar long pass reflector and method of making
US20040145289A1 (en) 2003-01-27 2004-07-29 3M Innovative Properties Company Phosphor based light sources having a non-planar short pass reflector and method of making
JP2006516828A (ja) 2003-01-27 2006-07-06 スリーエム イノベイティブ プロパティズ カンパニー 蛍燐光体系光源素子および作製方法
US7091661B2 (en) 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a reflective polarizer
US7118438B2 (en) 2003-01-27 2006-10-10 3M Innovative Properties Company Methods of making phosphor based light sources having an interference reflector
US20040159900A1 (en) * 2003-01-27 2004-08-19 3M Innovative Properties Company Phosphor based light sources having front illumination
CN100459186C (zh) * 2003-01-27 2009-02-04 3M创新有限公司 具有反射式偏振器的基于荧光粉的光源
CN1742385A (zh) * 2003-01-27 2006-03-01 3M创新有限公司 基于荧光粉的光源元件及其制造方法
US7245072B2 (en) 2003-01-27 2007-07-17 3M Innovative Properties Company Phosphor based light sources having a polymeric long pass reflector
US7812423B2 (en) 2003-08-12 2010-10-12 Massachusetts Institute Of Technology Optical device comprising crystalline semiconductor layer and reflective element
US7332365B2 (en) 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
US7791061B2 (en) 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US20060091412A1 (en) * 2004-10-29 2006-05-04 Wheatley John A Polarized LED
KR100706958B1 (ko) 2005-05-26 2007-04-11 삼성전기주식회사 발광소자용 반사기와 그 반사기를 사용한 발광소자 모듈 및그 제조방법
WO2007057807A2 (en) * 2005-11-17 2007-05-24 Koninklijke Philips Electronics N.V. Vcsel with coating for polarization control
US8805136B2 (en) * 2006-05-08 2014-08-12 Photonics On-Fiber Devices, Inc. On-fiber tunable Bragg gratings for DWDM applications
EP1906497B1 (de) 2006-09-27 2011-01-05 OSRAM Opto Semiconductors GmbH Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US8617997B2 (en) 2007-08-21 2013-12-31 Cree, Inc. Selective wet etching of gold-tin based solder
WO2009039354A2 (en) * 2007-09-19 2009-03-26 Massachusetts Institute Of Technology Hybrid organic-inorganic dielectric bragg mirrors, and methods of use thereof
US20100086750A1 (en) * 2008-10-08 2010-04-08 Lucent Technologies Inc. Conductive polymer metamaterials
US7936802B2 (en) * 2008-10-21 2011-05-03 Case Western Reserve University Co-extruded multilayer polymers films for all-polymer lasers
TWI398020B (zh) * 2008-12-01 2013-06-01 Ind Tech Res Inst 發光裝置
CN101752472B (zh) * 2008-12-18 2014-01-01 财团法人工业技术研究院 发光装置
KR101990312B1 (ko) * 2012-12-31 2019-06-18 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
CN104836116B (zh) * 2015-04-09 2018-01-05 中国科学技术大学先进技术研究院 一种基于聚合物的基横模微柱形激光器

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US5069820A (en) * 1987-08-07 1991-12-03 Allied-Signal Inc. Thermally stable forms of electrically conductive polyaniline
US5158908A (en) * 1990-08-31 1992-10-27 At&T Bell Laboratories Distributed bragg reflectors and devices incorporating same
US5044736A (en) * 1990-11-06 1991-09-03 Motorola, Inc. Configurable optical filter or display
KR100261971B1 (ko) * 1991-06-12 2000-07-15 스미스 폴 처리가능한 형의 전기전도성 폴리아닐린 및 그로부터 형성된 전도성 제품
US5331654A (en) * 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US5539759A (en) * 1994-10-04 1996-07-23 Board Of Trustees Of The Leland Stanford Junior University Single mode laser with a passive antiguide region

Also Published As

Publication number Publication date
GB2311166A (en) 1997-09-17
EP0795941B1 (de) 1999-10-06
JP3418082B2 (ja) 2003-06-16
GB9605288D0 (en) 1996-05-15
US6137819A (en) 2000-10-24
JPH1041590A (ja) 1998-02-13
EP0795941A1 (de) 1997-09-17
DE69700573D1 (de) 1999-11-11

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