DE69708582T2 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung

Info

Publication number
DE69708582T2
DE69708582T2 DE69708582T DE69708582T DE69708582T2 DE 69708582 T2 DE69708582 T2 DE 69708582T2 DE 69708582 T DE69708582 T DE 69708582T DE 69708582 T DE69708582 T DE 69708582T DE 69708582 T2 DE69708582 T2 DE 69708582T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69708582T
Other languages
English (en)
Other versions
DE69708582D1 (de
Inventor
Geoffrey Duggan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69708582D1 publication Critical patent/DE69708582D1/de
Publication of DE69708582T2 publication Critical patent/DE69708582T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H01S5/2013—MQW barrier reflection layers
DE69708582T 1996-12-21 1997-12-19 Halbleiterlaservorrichtung Expired - Lifetime DE69708582T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9626644A GB2320609A (en) 1996-12-21 1996-12-21 Semiconductor laser device

Publications (2)

Publication Number Publication Date
DE69708582D1 DE69708582D1 (de) 2002-01-10
DE69708582T2 true DE69708582T2 (de) 2002-07-25

Family

ID=10804863

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69708582T Expired - Lifetime DE69708582T2 (de) 1996-12-21 1997-12-19 Halbleiterlaservorrichtung

Country Status (5)

Country Link
US (1) US5991321A (de)
EP (1) EP0849848B1 (de)
JP (1) JPH11103127A (de)
DE (1) DE69708582T2 (de)
GB (1) GB2320609A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4147602B2 (ja) * 1998-02-02 2008-09-10 ソニー株式会社 自励発振型半導体レーザ
GB2344932A (en) * 1998-12-15 2000-06-21 Sharp Kk Semiconductor Laser with gamma and X electron barriers
US6647041B1 (en) * 2000-05-26 2003-11-11 Finisar Corporation Electrically pumped vertical optical cavity with improved electrical performance
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6628694B2 (en) * 2001-04-23 2003-09-30 Agilent Technologies, Inc. Reliability-enhancing layers for vertical cavity surface emitting lasers
JP4265875B2 (ja) * 2001-05-28 2009-05-20 日本オプネクスト株式会社 面発光半導体レーザの製造方法
JP4943052B2 (ja) * 2006-04-27 2012-05-30 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び光通信システム
JP5590829B2 (ja) * 2009-07-03 2014-09-17 キヤノン株式会社 面発光レーザ、面発光レーザアレイ及び画像形成装置
US10134948B2 (en) * 2011-02-25 2018-11-20 Sensor Electronic Technology, Inc. Light emitting diode with polarization control
US11973316B2 (en) * 2018-03-28 2024-04-30 Sony Corporation Vertical cavity surface emitting laser element and electronic apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH057051A (ja) * 1990-11-09 1993-01-14 Furukawa Electric Co Ltd:The 量子バリア半導体光素子
EP0506049B1 (de) * 1991-03-27 1996-06-26 Fujitsu Limited Nichtlineare halbleitende optische Vorrichtung mit verbessertem Signal-Rausch-Verhältnis
GB2265755B (en) * 1992-03-31 1995-11-08 Matsushita Electronics Corp Semiconductor laser device and its fabrication method
JPH06326406A (ja) * 1993-03-18 1994-11-25 Fuji Xerox Co Ltd 半導体レーザ装置
US5600667A (en) * 1993-04-05 1997-02-04 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
JPH07147449A (ja) * 1993-11-25 1995-06-06 Mitsubishi Electric Corp 多重量子障壁構造，及び可視光半導体レーザダイオード
JPH0888434A (ja) * 1994-09-19 1996-04-02 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
US5509024A (en) * 1994-11-28 1996-04-16 Xerox Corporation Diode laser with tunnel barrier layer
GB2308732A (en) * 1995-12-29 1997-07-02 Sharp Kk A semiconductor laser device

Also Published As

Publication number Publication date
EP0849848A1 (de) 1998-06-24
EP0849848B1 (de) 2001-11-28
US5991321A (en) 1999-11-23
DE69708582D1 (de) 2002-01-10
GB9626644D0 (en) 1997-02-12
JPH11103127A (ja) 1999-04-13
GB2320609A (en) 1998-06-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition