DE69725783D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69725783D1
DE69725783D1 DE69725783T DE69725783T DE69725783D1 DE 69725783 D1 DE69725783 D1 DE 69725783D1 DE 69725783 T DE69725783 T DE 69725783T DE 69725783 T DE69725783 T DE 69725783T DE 69725783 D1 DE69725783 D1 DE 69725783D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69725783T
Other languages
English (en)
Other versions
DE69725783T2 (de
Inventor
Mitsugu Wada
Toshiaki Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15569196A external-priority patent/JPH104237A/ja
Priority claimed from JP18735396A external-priority patent/JP4033930B2/ja
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE69725783D1 publication Critical patent/DE69725783D1/de
Publication of DE69725783T2 publication Critical patent/DE69725783T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69725783T 1996-06-17 1997-06-16 Halbleiterlaser Expired - Lifetime DE69725783T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP15569196 1996-06-17
JP15569196A JPH104237A (ja) 1996-06-17 1996-06-17 半導体レーザ
JP18735396 1996-07-17
JP18735396A JP4033930B2 (ja) 1996-07-17 1996-07-17 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69725783D1 true DE69725783D1 (de) 2003-12-04
DE69725783T2 DE69725783T2 (de) 2004-07-29

Family

ID=26483621

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69725783T Expired - Lifetime DE69725783T2 (de) 1996-06-17 1997-06-16 Halbleiterlaser

Country Status (3)

Country Link
US (1) US6028874A (de)
EP (1) EP0814548B1 (de)
DE (1) DE69725783T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3985283B2 (ja) * 1997-01-22 2007-10-03 ソニー株式会社 発光素子
US6219365B1 (en) * 1998-11-03 2001-04-17 Wisconsin Alumni Research Foundation High performance aluminum free active region semiconductor lasers
US6614821B1 (en) 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
GB2353899A (en) 1999-09-01 2001-03-07 Sharp Kk A quantum well semiconductor device with strained barrier layer
EP1104057B1 (de) * 1999-11-19 2005-07-27 Fuji Photo Film Co., Ltd. Hochleistungshalbleiterlaser mit Strombegrenzung und indexgeführter Struktur
US6973109B2 (en) * 2000-02-28 2005-12-06 Fuji Photo Film Co., Ltd. Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
JP2001308466A (ja) * 2000-04-24 2001-11-02 Fuji Photo Film Co Ltd 半導体レーザ装置
WO2002025746A1 (fr) * 2000-09-21 2002-03-28 Sharp Kabushiki Kaisha Element emetteur de lumiere a semiconducteur de nitrure et dispositif optique contenant cet element
JP2002204032A (ja) * 2000-10-31 2002-07-19 Fuji Photo Film Co Ltd 半導体レーザ素子
JP2002374042A (ja) * 2000-12-12 2002-12-26 Fuji Photo Film Co Ltd 半導体レーザ素子
EP1263100A3 (de) * 2001-05-28 2005-02-09 Fuji Photo Film Co., Ltd. Halbleiterlaser und dessen Herstellungsverfahren
US7801194B2 (en) * 2002-07-01 2010-09-21 Sharp Kabushiki Kaisha Semiconductor laser device and optical disk unit using the same
JP2004296637A (ja) * 2003-03-26 2004-10-21 Sharp Corp 半導体レーザ装置および光ディスク装置
WO2006104980A2 (en) 2005-03-25 2006-10-05 Trumpf Photonics Inc. Laser facet passivation
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
US7903711B1 (en) * 2009-11-13 2011-03-08 Coherent, Inc. Separate confinement heterostructure with asymmetric structure and composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276698A (en) * 1990-09-20 1994-01-04 Sumitomo Electric Ind., Ltd. Semiconductor laser having an optical waveguide layer including an AlGaInP active layer
JPH05145178A (ja) * 1991-11-18 1993-06-11 Furukawa Electric Co Ltd:The 歪量子井戸半導体レーザ素子
CA2138912C (en) * 1993-12-24 1999-05-04 Shoji Ishizaka Semiconductor laser device
JPH0878771A (ja) * 1994-09-02 1996-03-22 Sumitomo Electric Ind Ltd 半導体レーザとその製造方法
JPH0878786A (ja) * 1994-09-02 1996-03-22 Mitsubishi Electric Corp 歪量子井戸の構造

Also Published As

Publication number Publication date
DE69725783T2 (de) 2004-07-29
EP0814548A3 (de) 1999-06-23
EP0814548B1 (de) 2003-10-29
US6028874A (en) 2000-02-22
EP0814548A2 (de) 1997-12-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP

R082 Change of representative

Ref document number: 814548

Country of ref document: EP

Representative=s name: KLUNKER, SCHMITT-NILSON, HIRSCH, 80796 MUENCHEN, D