DE69905197D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69905197D1
DE69905197D1 DE69905197T DE69905197T DE69905197D1 DE 69905197 D1 DE69905197 D1 DE 69905197D1 DE 69905197 T DE69905197 T DE 69905197T DE 69905197 T DE69905197 T DE 69905197T DE 69905197 D1 DE69905197 D1 DE 69905197D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69905197T
Other languages
English (en)
Inventor
Jerome Faist
Mattias Beck
Antoine Muller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alpes Lasers SA
Original Assignee
Alpes Lasers SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpes Lasers SA filed Critical Alpes Lasers SA
Application granted granted Critical
Publication of DE69905197D1 publication Critical patent/DE69905197D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
DE69905197T 1998-12-09 1999-11-30 Halbleiterlaser Expired - Lifetime DE69905197D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9815721A FR2787246B1 (fr) 1998-12-09 1998-12-09 Laser de type semi-conducteur
PCT/CH1999/000572 WO2000035060A1 (fr) 1998-12-09 1999-11-30 Laser de type semi-conducteur

Publications (1)

Publication Number Publication Date
DE69905197D1 true DE69905197D1 (de) 2003-03-06

Family

ID=9533911

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69905197T Expired - Lifetime DE69905197D1 (de) 1998-12-09 1999-11-30 Halbleiterlaser

Country Status (4)

Country Link
EP (1) EP1138101B1 (de)
DE (1) DE69905197D1 (de)
FR (1) FR2787246B1 (de)
WO (1) WO2000035060A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1195865A1 (de) 2000-08-31 2002-04-10 Alpes Lasers SA Quantenkaskadierter Laser
EP1189317A1 (de) 2000-09-13 2002-03-20 Alpes Lasers SA Quantenkaskadenlaser mit Anregung durch optische Phononen
WO2009070821A2 (de) * 2007-12-05 2009-06-11 Technische Universität Wien Halbleiterlaser mit absorptionsschicht
EP2399635A1 (de) 2010-06-28 2011-12-28 Sanofi-Aventis Deutschland GmbH Automatischer Injektor
EP2489387A1 (de) 2011-02-18 2012-08-22 Sanofi-Aventis Deutschland GmbH Automatischer Injektor
EP2489384A1 (de) 2011-02-18 2012-08-22 Sanofi-Aventis Deutschland GmbH Automatischer Injektor
EP2489381A1 (de) 2011-02-18 2012-08-22 Sanofi-Aventis Deutschland GmbH Automatischer Injektor
EP2489380A1 (de) 2011-02-18 2012-08-22 Sanofi-Aventis Deutschland GmbH Injektionsvorrichtung
EP2489385A1 (de) 2011-02-18 2012-08-22 Sanofi-Aventis Deutschland GmbH Automatischer Injektor
EP2489389A1 (de) 2011-02-18 2012-08-22 Sanofi-Aventis Deutschland GmbH Arretierungsmechanismus
EP2489390A1 (de) 2011-02-18 2012-08-22 Sanofi-Aventis Deutschland GmbH Arretierungsmechanismus
EP2489382A1 (de) 2011-02-18 2012-08-22 Sanofi-Aventis Deutschland GmbH Automatischer Injektor
EP2489388A1 (de) 2011-02-18 2012-08-22 Sanofi-Aventis Deutschland GmbH Automatischer Injektor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5901168A (en) * 1997-05-07 1999-05-04 Lucent Technologies Inc. Article comprising an improved QC laser

Also Published As

Publication number Publication date
EP1138101B1 (de) 2003-01-29
EP1138101A1 (de) 2001-10-04
FR2787246A1 (fr) 2000-06-16
FR2787246B1 (fr) 2001-02-23
WO2000035060A1 (fr) 2000-06-15

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Legal Events

Date Code Title Description
8332 No legal effect for de