DE60029865D1 - Einmodiger Halbleiterlaser - Google Patents

Einmodiger Halbleiterlaser

Info

Publication number
DE60029865D1
DE60029865D1 DE60029865T DE60029865T DE60029865D1 DE 60029865 D1 DE60029865 D1 DE 60029865D1 DE 60029865 T DE60029865 T DE 60029865T DE 60029865 T DE60029865 T DE 60029865T DE 60029865 D1 DE60029865 D1 DE 60029865D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
mode semiconductor
mode
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60029865T
Other languages
English (en)
Inventor
Kiichi Hamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE60029865D1 publication Critical patent/DE60029865D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60029865T 1999-05-13 2000-05-10 Einmodiger Halbleiterlaser Expired - Lifetime DE60029865D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13279899A JP3329764B2 (ja) 1999-05-13 1999-05-13 半導体レーザー及び半導体光増幅器

Publications (1)

Publication Number Publication Date
DE60029865D1 true DE60029865D1 (de) 2006-09-21

Family

ID=15089825

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60029865T Expired - Lifetime DE60029865D1 (de) 1999-05-13 2000-05-10 Einmodiger Halbleiterlaser

Country Status (4)

Country Link
US (1) US6768758B1 (de)
EP (1) EP1052747B1 (de)
JP (1) JP3329764B2 (de)
DE (1) DE60029865D1 (de)

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EP1241751B1 (de) * 2001-03-13 2004-06-02 JDS Uniphase Corporation Kink-freie, einmodige Hochleistungs-Laserdioden
JP3991615B2 (ja) 2001-04-24 2007-10-17 日本電気株式会社 半導体光アンプおよび半導体レーザ
CA2449047C (en) * 2001-05-31 2012-01-31 Nichia Corporation Semiconductor laser element with shading layers and improved far field pattern
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JP3795821B2 (ja) * 2002-03-29 2006-07-12 日本発条株式会社 光分岐器
JP2004055647A (ja) * 2002-07-17 2004-02-19 Nec Corp 分布ブラッグ反射型半導体レーザ、集積型半導体レーザ、半導体レーザモジュール、光ネットワークシステム
JP2004240361A (ja) * 2003-02-10 2004-08-26 Seiko Epson Corp レンズ一体型光ファイバおよびその製造方法、光モジュール、ならびに光伝達装置
JP3985159B2 (ja) 2003-03-14 2007-10-03 日本電気株式会社 利得クランプ型半導体光増幅器
US7058259B2 (en) * 2003-08-14 2006-06-06 Lucent Technologies Inc. Optical device having a waveguide lens with multimode interference
JP4534449B2 (ja) * 2003-08-28 2010-09-01 日本電気株式会社 Ｍｍｉ型半導体レーザおよびその製造方法
WO2005022223A1 (ja) * 2003-08-28 2005-03-10 Nec Corporation 導波路型光デバイスおよびその製造方法
JP2005142182A (ja) * 2003-11-04 2005-06-02 Nec Corp 光半導体素子およびその製造方法
KR100560387B1 (ko) 2003-12-24 2006-03-13 한국전자통신연구원 단일/다중 모드 변환기, 및 이를 이용한 광 부호 분할다중 접속 시스템
US7466736B2 (en) 2004-08-13 2008-12-16 Nec Corporation Semiconductor laser diode, semiconductor optical amplifier, and optical communication device
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US7366210B2 (en) 2005-11-18 2008-04-29 Jds Uniphase Corporation Single spatial mode output multi-mode interference laser diode with external cavity
WO2007097228A1 (ja) * 2006-02-23 2007-08-30 Nippon Sheet Glass Company, Limited 導波路型光学素子
DE112008000772T5 (de) * 2007-03-23 2010-04-08 Kyushu University, National University Corporation, Fukuoka-shi Superlumineszente lichtemittierende Diode
JP5153524B2 (ja) * 2008-09-01 2013-02-27 シャープ株式会社 窒化物半導体発光素子およびその製造方法
GB2471266B (en) * 2009-06-10 2013-07-10 Univ Sheffield Semiconductor light source and method of fabrication thereof
JP4444368B1 (ja) * 2009-07-30 2010-03-31 古河電気工業株式会社 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム
JP2012015266A (ja) 2010-06-30 2012-01-19 Sony Corp 半導体光増幅器
KR20120063867A (ko) * 2010-12-08 2012-06-18 한국전자통신연구원 광 터치 패널
JP6160141B2 (ja) * 2012-03-22 2017-07-12 日亜化学工業株式会社 半導体レーザ装置
JP6080798B2 (ja) * 2014-05-01 2017-02-15 ソニー株式会社 半導体光増幅器及び半導体レーザ装置組立体並びに半導体光増幅器の位置調整方法
JP2017201353A (ja) * 2016-05-02 2017-11-09 住友電気工業株式会社 スポットサイズ変換器、半導体光デバイス
US11095097B2 (en) 2016-11-28 2021-08-17 King Abdullah University Of Science And Technology Integrated semiconductor optical amplifier and laser diode at visible wavelength
US10855056B2 (en) * 2017-01-10 2020-12-01 Nlight, Inc. Power and brightness scaling in fiber coupled diode lasers using diodes with optimized beam dimensions
CN109560465A (zh) * 2017-09-26 2019-04-02 北京万集科技股份有限公司 一种1x1型单片集成式半导体主振荡放大器
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
CN113410755B (zh) * 2021-06-21 2022-07-08 中国科学院半导体研究所 一种外腔窄线宽激光器

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Also Published As

Publication number Publication date
US6768758B1 (en) 2004-07-27
EP1052747A3 (de) 2004-06-02
EP1052747B1 (de) 2006-08-09
JP2000323781A (ja) 2000-11-24
JP3329764B2 (ja) 2002-09-30
EP1052747A2 (de) 2000-11-15

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Legal Events

Date Code Title Description
8332 No legal effect for de