DE69922427D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69922427D1
DE69922427D1 DE1999622427 DE69922427T DE69922427D1 DE 69922427 D1 DE69922427 D1 DE 69922427D1 DE 1999622427 DE1999622427 DE 1999622427 DE 69922427 T DE69922427 T DE 69922427T DE 69922427 D1 DE69922427 D1 DE 69922427D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1999622427
Other languages
English (en)
Other versions
DE69922427T2 (de
Inventor
Hideki Asano
Mitsugu Wada
Toshiaki Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE69922427D1 publication Critical patent/DE69922427D1/de
Publication of DE69922427T2 publication Critical patent/DE69922427T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69922427T 1998-02-10 1999-02-10 Halbleiterlaser Expired - Lifetime DE69922427T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2823898 1998-02-10
JP2823898 1998-02-10
JP8523098 1998-03-31
JP08523098A JP3317335B2 (ja) 1998-02-10 1998-03-31 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE69922427D1 true DE69922427D1 (de) 2005-01-13
DE69922427T2 DE69922427T2 (de) 2005-05-19

Family

ID=26366289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69922427T Expired - Lifetime DE69922427T2 (de) 1998-02-10 1999-02-10 Halbleiterlaser

Country Status (4)

Country Link
US (1) US6285695B1 (de)
EP (1) EP0936709B1 (de)
JP (1) JP3317335B2 (de)
DE (1) DE69922427T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6973109B2 (en) * 2000-02-28 2005-12-06 Fuji Photo Film Co., Ltd. Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
JP2001257431A (ja) * 2000-03-09 2001-09-21 Fuji Photo Film Co Ltd 半導体レーザ
EP1583187B1 (de) * 2000-10-12 2007-07-04 FUJIFILM Corporation Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche
JP2002141610A (ja) * 2000-10-31 2002-05-17 Fuji Photo Film Co Ltd 半導体レーザ素子およびその製造方法
JP2002204032A (ja) * 2000-10-31 2002-07-19 Fuji Photo Film Co Ltd 半導体レーザ素子
JP2002374042A (ja) * 2000-12-12 2002-12-26 Fuji Photo Film Co Ltd 半導体レーザ素子
US6912237B2 (en) * 2001-02-06 2005-06-28 The Furukawa Electric Co., Ltd. Semiconductor laser module and semiconductor laser device having light feedback function
JP2002305352A (ja) 2001-04-05 2002-10-18 Fuji Photo Film Co Ltd 半導体レーザ素子
KR100817487B1 (ko) * 2001-04-30 2008-03-27 후지필름 가부시키가이샤 반도체 레이저 장치
KR100453963B1 (ko) * 2001-12-19 2004-10-20 엘지전자 주식회사 광통신 소자와 제조 방법 및 그의 모듈
CN101501816A (zh) 2005-03-25 2009-08-05 通快光子学公司 激光器腔面钝化
JP2009146968A (ja) * 2007-12-12 2009-07-02 Fujifilm Corp 半導体発光素子
WO2017192718A1 (en) * 2016-05-05 2017-11-09 Macom Technology Solutions Holdings, Inc. Semiconductor laser incorporating an electron barrier with low aluminum content

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2109231T3 (es) * 1989-10-31 1998-01-16 Furukawa Electric Co Ltd Elementos laser de semi-conductores y metodo de fabricacion.

Also Published As

Publication number Publication date
EP0936709A2 (de) 1999-08-18
EP0936709A3 (de) 2000-03-15
JPH11298086A (ja) 1999-10-29
US6285695B1 (en) 2001-09-04
DE69922427T2 (de) 2005-05-19
EP0936709B1 (de) 2004-12-08
JP3317335B2 (ja) 2002-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP

R082 Change of representative

Ref document number: 936709

Country of ref document: EP

Representative=s name: KLUNKER, SCHMITT-NILSON, HIRSCH, 80796 MUENCHEN, D