DE69801974D1 - Halbleiterlaser - Google Patents
HalbleiterlaserInfo
- Publication number
- DE69801974D1 DE69801974D1 DE69801974T DE69801974T DE69801974D1 DE 69801974 D1 DE69801974 D1 DE 69801974D1 DE 69801974 T DE69801974 T DE 69801974T DE 69801974 T DE69801974 T DE 69801974T DE 69801974 D1 DE69801974 D1 DE 69801974D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32333—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm based on InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32317697 | 1997-11-25 | ||
JP31764498A JP3753216B2 (ja) | 1997-11-25 | 1998-11-09 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69801974D1 true DE69801974D1 (de) | 2001-11-15 |
DE69801974T2 DE69801974T2 (de) | 2002-04-04 |
Family
ID=26569090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69801974T Expired - Lifetime DE69801974T2 (de) | 1997-11-25 | 1998-11-24 | Halbleiterlaser |
Country Status (4)
Country | Link |
---|---|
US (1) | US6127691A (de) |
EP (1) | EP0920096B1 (de) |
JP (1) | JP3753216B2 (de) |
DE (1) | DE69801974T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11233815A (ja) * | 1998-02-13 | 1999-08-27 | Furukawa Electric Co Ltd:The | 半導体発光ダイオード |
JP3434706B2 (ja) * | 1998-05-21 | 2003-08-11 | 富士写真フイルム株式会社 | 半導体レーザおよびその製造方法 |
US6219365B1 (en) * | 1998-11-03 | 2001-04-17 | Wisconsin Alumni Research Foundation | High performance aluminum free active region semiconductor lasers |
US6542528B1 (en) | 1999-02-15 | 2003-04-01 | Ricoh Company, Ltd. | Light-emitting semiconductor device producing red wavelength optical radiation |
JP2001308466A (ja) * | 2000-04-24 | 2001-11-02 | Fuji Photo Film Co Ltd | 半導体レーザ装置 |
JP2002026453A (ja) * | 2000-07-03 | 2002-01-25 | Mitsubishi Electric Corp | リッジ導波路型半導体レーザ及びその製造方法 |
EP1198042B1 (de) * | 2000-10-12 | 2006-05-10 | Fuji Photo Film Co., Ltd. | Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche und zugehöriges Herstellungsverfahren |
JP2002204032A (ja) * | 2000-10-31 | 2002-07-19 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP2002305352A (ja) * | 2001-04-05 | 2002-10-18 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP2003152281A (ja) | 2001-11-15 | 2003-05-23 | Sharp Corp | 半導体レーザ素子およびそれを用いた光ディスク装置 |
JP2003283056A (ja) | 2002-01-15 | 2003-10-03 | Sharp Corp | 半導体レーザ装置および光ディスク再生記録装置 |
JP2003289175A (ja) | 2002-01-28 | 2003-10-10 | Sharp Corp | 半導体レーザ素子 |
JP4927807B2 (ja) * | 2002-01-28 | 2012-05-09 | シャープ株式会社 | 半導体レーザ素子 |
US7801194B2 (en) | 2002-07-01 | 2010-09-21 | Sharp Kabushiki Kaisha | Semiconductor laser device and optical disk unit using the same |
US7378681B2 (en) * | 2002-08-12 | 2008-05-27 | Agility Communications, Inc. | Ridge waveguide device surface passivation by epitaxial regrowth |
JP2004158615A (ja) * | 2002-11-06 | 2004-06-03 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP2004296637A (ja) | 2003-03-26 | 2004-10-21 | Sharp Corp | 半導体レーザ装置および光ディスク装置 |
JP2004296634A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 半導体レーザ装置および光ディスク装置 |
JP4262549B2 (ja) * | 2003-07-22 | 2009-05-13 | シャープ株式会社 | 半導体レーザ素子およびその製造方法 |
US7687291B2 (en) | 2005-03-25 | 2010-03-30 | Trumpf Photonics Inc. | Laser facet passivation |
US7403552B2 (en) * | 2006-03-10 | 2008-07-22 | Wisconsin Alumni Research Foundation | High efficiency intersubband semiconductor lasers |
US7457338B2 (en) * | 2006-04-19 | 2008-11-25 | Wisconsin Alumni Research Foundation | Quantum well lasers with strained quantum wells and dilute nitride barriers |
TWI341600B (en) * | 2007-08-31 | 2011-05-01 | Huga Optotech Inc | Light optoelectronic device and forming method thereof |
DE102007057708A1 (de) * | 2007-09-26 | 2009-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US9716368B2 (en) * | 2015-07-02 | 2017-07-25 | Sae Magnetics (H.K.) Ltd. | Tunable optical phase filter |
US10043941B1 (en) | 2017-01-31 | 2018-08-07 | International Business Machines Corporation | Light emitting diode having improved quantum efficiency at low injection current |
CN110854678B (zh) * | 2018-08-20 | 2021-02-05 | 山东华光光电子股份有限公司 | 一种GaAs基大功率激光器制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5488233A (en) * | 1993-03-11 | 1996-01-30 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device with compound semiconductor layer |
US5389396A (en) * | 1993-08-11 | 1995-02-14 | Northwestern University | InGaAsP/GaAs diode laser |
US5617437A (en) * | 1994-11-24 | 1997-04-01 | Fuji Photo Film Co., Ltd. | Semiconductor laser |
US5663976A (en) * | 1995-10-16 | 1997-09-02 | Northwestern University | Buried-ridge laser device |
JPH09270558A (ja) * | 1996-03-29 | 1997-10-14 | Fuji Photo Film Co Ltd | 半導体レーザ |
-
1998
- 1998-11-09 JP JP31764498A patent/JP3753216B2/ja not_active Expired - Fee Related
- 1998-11-24 DE DE69801974T patent/DE69801974T2/de not_active Expired - Lifetime
- 1998-11-24 EP EP98122308A patent/EP0920096B1/de not_active Expired - Lifetime
- 1998-11-25 US US09/199,815 patent/US6127691A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0920096A2 (de) | 1999-06-02 |
JPH11220224A (ja) | 1999-08-10 |
EP0920096B1 (de) | 2001-10-10 |
US6127691A (en) | 2000-10-03 |
EP0920096A3 (de) | 1999-07-14 |
JP3753216B2 (ja) | 2006-03-08 |
DE69801974T2 (de) | 2002-04-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP |
|
R082 | Change of representative |
Ref document number: 920096 Country of ref document: EP Representative=s name: KLUNKER, SCHMITT-NILSON, HIRSCH, 80796 MUENCHEN, D |