DE69730872D1 - Laservorrichtung - Google Patents
LaservorrichtungInfo
- Publication number
- DE69730872D1 DE69730872D1 DE69730872T DE69730872T DE69730872D1 DE 69730872 D1 DE69730872 D1 DE 69730872D1 DE 69730872 T DE69730872 T DE 69730872T DE 69730872 T DE69730872 T DE 69730872T DE 69730872 D1 DE69730872 D1 DE 69730872D1
- Authority
- DE
- Germany
- Prior art keywords
- laser device
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IB1997/000055 WO1998033249A1 (en) | 1997-01-27 | 1997-01-27 | Laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69730872D1 true DE69730872D1 (de) | 2004-10-28 |
DE69730872T2 DE69730872T2 (de) | 2005-09-29 |
Family
ID=11004523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69730872T Expired - Lifetime DE69730872T2 (de) | 1997-01-27 | 1997-01-27 | Laservorrichtung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1012933B1 (de) |
JP (1) | JP3356436B2 (de) |
DE (1) | DE69730872T2 (de) |
WO (1) | WO1998033249A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003101155A (ja) * | 2001-09-21 | 2003-04-04 | Sharp Corp | 窒化物半導体レーザ素子 |
US7167489B2 (en) | 2001-09-21 | 2007-01-23 | Sharp Kabushiki Kaisha | GaN-based semiconductor laser device |
JP4406023B2 (ja) * | 2007-08-24 | 2010-01-27 | 富士通株式会社 | 光集積素子 |
DE102007060204B4 (de) | 2007-09-28 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
DE102008058436B4 (de) * | 2008-11-21 | 2019-03-07 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip |
WO2013081063A1 (ja) | 2011-11-30 | 2013-06-06 | 日本電気株式会社 | 高次モードフィルタ |
DE102012110613A1 (de) * | 2012-11-06 | 2014-05-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
DE102013223499C5 (de) * | 2013-11-18 | 2020-03-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Breitstreifenlaser und Verfahren zum Herstellen eines Breitstreifenlasers |
JP6447342B2 (ja) * | 2015-04-24 | 2019-01-09 | 三菱電機株式会社 | 平面導波路、レーザ増幅器及びレーザ発振器 |
US10084282B1 (en) | 2017-08-14 | 2018-09-25 | The United States Of America As Represented By The Secretary Of The Air Force | Fundamental mode operation in broad area quantum cascade lasers |
US11031753B1 (en) | 2017-11-13 | 2021-06-08 | The Government Of The United States Of America As Represented By The Secretary Of The Air Force | Extracting the fundamental mode in broad area quantum cascade lasers |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156381A (en) * | 1979-01-24 | 1980-12-05 | Nec Corp | Semiconductor laser |
JPS61134094A (ja) * | 1984-12-05 | 1986-06-21 | Nec Corp | 半導体レ−ザ |
DE3914001A1 (de) * | 1989-04-27 | 1990-10-31 | Siemens Ag | Halbleiterlaser mit eingepraegtem modenspektrum und verfahren zu dessen herstellung |
JP2507685B2 (ja) * | 1990-07-25 | 1996-06-12 | 株式会社東芝 | 半導体レ―ザ |
-
1997
- 1997-01-27 WO PCT/IB1997/000055 patent/WO1998033249A1/en active IP Right Grant
- 1997-01-27 DE DE69730872T patent/DE69730872T2/de not_active Expired - Lifetime
- 1997-01-27 EP EP97900398A patent/EP1012933B1/de not_active Expired - Lifetime
- 1997-01-27 JP JP53176898A patent/JP3356436B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1012933B1 (de) | 2004-09-22 |
DE69730872T2 (de) | 2005-09-29 |
JP3356436B2 (ja) | 2002-12-16 |
WO1998033249A1 (en) | 1998-07-30 |
JP2000509913A (ja) | 2000-08-02 |
EP1012933A1 (de) | 2000-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: DUSCHER, R., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 7 |