DE69904265T2 - Halbleiterlaser - Google Patents
HalbleiterlaserInfo
- Publication number
- DE69904265T2 DE69904265T2 DE1999604265 DE69904265T DE69904265T2 DE 69904265 T2 DE69904265 T2 DE 69904265T2 DE 1999604265 DE1999604265 DE 1999604265 DE 69904265 T DE69904265 T DE 69904265T DE 69904265 T2 DE69904265 T2 DE 69904265T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2302/00—Amplification / lasing wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17336898A JP3189791B2 (ja) | 1998-06-19 | 1998-06-19 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69904265D1 DE69904265D1 (de) | 2003-01-16 |
DE69904265T2 true DE69904265T2 (de) | 2003-08-28 |
Family
ID=15959113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1999604265 Expired - Lifetime DE69904265T2 (de) | 1998-06-19 | 1999-06-18 | Halbleiterlaser |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0975073B1 (de) |
JP (1) | JP3189791B2 (de) |
DE (1) | DE69904265T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7058112B2 (en) | 2001-12-27 | 2006-06-06 | Finisar Corporation | Indium free vertical cavity surface emitting laser |
US6975660B2 (en) | 2001-12-27 | 2005-12-13 | Finisar Corporation | Vertical cavity surface emitting laser including indium and antimony in the active region |
US7408964B2 (en) | 2001-12-20 | 2008-08-05 | Finisar Corporation | Vertical cavity surface emitting laser including indium and nitrogen in the active region |
US7095770B2 (en) | 2001-12-20 | 2006-08-22 | Finisar Corporation | Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region |
US6922426B2 (en) | 2001-12-20 | 2005-07-26 | Finisar Corporation | Vertical cavity surface emitting laser including indium in the active region |
JP2001223437A (ja) * | 2000-02-07 | 2001-08-17 | Hitachi Ltd | 半導体レーザ装置 |
US6898224B2 (en) * | 2001-08-22 | 2005-05-24 | The Furukawa Electric Co., Ltd. | Semiconductor laser device |
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US6711195B2 (en) * | 2002-02-28 | 2004-03-23 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb quantum-well layer |
JP2004296845A (ja) * | 2003-03-27 | 2004-10-21 | Ricoh Co Ltd | 量子井戸構造および半導体発光素子および光送信モジュールおよび光伝送システム |
US6927412B2 (en) | 2002-11-21 | 2005-08-09 | Ricoh Company, Ltd. | Semiconductor light emitter |
JP4617684B2 (ja) * | 2004-02-24 | 2011-01-26 | ソニー株式会社 | 半導体レーザ素子 |
CN101432936B (zh) | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | 具有多顶侧接触的垂直腔面发射激光器 |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
JP2011109148A (ja) * | 2005-07-11 | 2011-06-02 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP5090192B2 (ja) * | 2008-01-28 | 2012-12-05 | シャープ株式会社 | 窒化物半導体発光素子とその窒化物半導体発光素子を備える窒化ガリウム系化合物半導体レーザ素子。 |
CN108346972B (zh) * | 2017-01-24 | 2020-09-18 | 山东华光光电子股份有限公司 | 一种具有超晶格限制层的AlGaInP半导体激光器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4599728A (en) * | 1983-07-11 | 1986-07-08 | At&T Bell Laboratories | Multi-quantum well laser emitting at 1.5 μm |
JPH06125135A (ja) * | 1992-10-14 | 1994-05-06 | Fujitsu Ltd | 半導体レーザ |
US5737353A (en) * | 1993-11-26 | 1998-04-07 | Nec Corporation | Multiquantum-well semiconductor laser |
DE59502831D1 (de) * | 1994-03-25 | 1998-08-20 | Fraunhofer Ges Forschung | Quantenschichtstruktur |
JPH08316588A (ja) * | 1995-05-23 | 1996-11-29 | Furukawa Electric Co Ltd:The | 歪量子井戸構造を有する半導体光素子 |
AU4588597A (en) * | 1996-09-25 | 1998-04-17 | Picolight Incorporated | Extended wavelength strained layer lasers |
-
1998
- 1998-06-19 JP JP17336898A patent/JP3189791B2/ja not_active Expired - Fee Related
-
1999
- 1999-06-18 EP EP19990111787 patent/EP0975073B1/de not_active Expired - Lifetime
- 1999-06-18 DE DE1999604265 patent/DE69904265T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3189791B2 (ja) | 2001-07-16 |
JP2000012971A (ja) | 2000-01-14 |
DE69904265D1 (de) | 2003-01-16 |
EP0975073B1 (de) | 2002-12-04 |
EP0975073A1 (de) | 2000-01-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |