EP0814548B1 - Halbleiterlaser - Google Patents

Halbleiterlaser Download PDF

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Publication number
EP0814548B1
EP0814548B1 EP97109778A EP97109778A EP0814548B1 EP 0814548 B1 EP0814548 B1 EP 0814548B1 EP 97109778 A EP97109778 A EP 97109778A EP 97109778 A EP97109778 A EP 97109778A EP 0814548 B1 EP0814548 B1 EP 0814548B1
Authority
EP
European Patent Office
Prior art keywords
layer
composition
optical waveguide
layers
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP97109778A
Other languages
English (en)
French (fr)
Other versions
EP0814548A3 (de
EP0814548A2 (de
Inventor
Mitsugu Wada
Toshiaki Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15569196A external-priority patent/JPH104237A/ja
Priority claimed from JP18735396A external-priority patent/JP4033930B2/ja
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of EP0814548A2 publication Critical patent/EP0814548A2/de
Publication of EP0814548A3 publication Critical patent/EP0814548A3/de
Application granted granted Critical
Publication of EP0814548B1 publication Critical patent/EP0814548B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Claims (4)

  1. Halbleiterlaser der III-V-Gruppe, umfassend eine erste Kaschierungsschicht, eine erste optische Wellenleiterschicht, eine erste Sperrschicht, eine aktive Schicht, eine zweite Sperrschicht, eine zweite optische Wellenleiterschicht und eine zweite Kaschierungsschicht, die in dieser Reihenfolge auf einem GaAs-Substrat, bei dem es sich um einen Verbindungshalbleiter der III-V-Gruppe handelt, gebildet sind, wobei die Verbesserung beinhaltet, daß
    jede von der ersten und der zweiten Kaschierungsschicht und der ersten und der zweiten optischen Wellenleiterschicht aus einer Zusammensetzung besteht, die an das Gitter des GaAs-Substrats angepaßt ist,
    die aktive Schicht aus einer Zusammensetzung besteht, die Druckspannung auf das GaAs-Substrat hervorruft,
    jede von der ersten und der zweiten Sperrschicht aus einer Zusammensetzung besteht, die Zugspannung auf das GaAs-Substrat aufbringt, um dadurch die von der aktiven Schicht induzierte Druckspannung zu kompensieren,
    das Verhältnis der Elemente der Gruppe V, die in der ersten optischen Wellenleiterschicht enthalten sind, das gleiche ist wie in der ersten Sperrschicht, und
    das Verhältnis der Elemente der Gruppe V, die in der zweiten optischen Wellenleiterschicht enthalten sind, das gleiche ist wie in der zweiten Sperrschicht.
  2. Halbleiterlaser nach Anspruch 1, bei dem
    die aktive Schicht eine Zusammensetzung Inx1Ca1-x1As (0≤x1≤1),
    jede von der ersten und der zweiten Sperrschicht eine Zusammensetzung Inx2Ga1-x2As1-yPy (0,00≤x2≤0,23; 0,04≤y≤0,50), und
    jede von der ersten und der zweiten optischen Wellenleiterschicht eine Zusammensetzung Inx3Ga1-x3As1-yPy (x2≤x3≤0,25) aufweist.
  3. Halbleiterlaser der Gruppe III-V mit Heterostruktur mit separater Begrenzung, umfassend eine Kaschierungsschicht von einem ersten Leitungstyp, eine erste optische Wellenleiterschicht, eine erste Sperrschicht, eine aktive Quantentopfschicht, eine zweite Sperrschicht, eine zweite optische Wellenleiterschicht und eine Kaschierungsschicht vom zweiten Leitungstyp, die in dieser Reihenfolge auf einem GaAs-Substrat gebildet sind, wobei die Verbesserung beinhaltet, daß
    die aktive Quantentopfschicht aus einer Zusammensetzung besteht, die As und P enthält und eine Zugspannung auf das GaAs-Substrat ausübt,
    jede von der ersten und der zweiten Sperrschicht eine Zusammensetzung ist, die In, Ga, Al, As und P enthält und Druckspannung auf das GaAs-Substrat ausübt, um dadurch die durch die aktive Schicht induzierte Zugspannung zu kompensieren,
    jede von der ersten und der zweiten optischen Wellenleiterschicht eine Zusammensetzung aufweist, die In, Ga, Al, As und P enthält und bezüglich des Gitters des GaAs-Substrats angepaßt ist,
    jede Kaschierungsschicht von dem ersten und dem zweiten Leitungstyp eine Zusammensetzung aufweist, die im Gitter an das GaAs-Substrat angepaßt ist, und
    die Verhältnisse von As zu P in der aktiven Quantentopfschicht, der ersten und der zweiten Sperrschicht und der ersten und der zweiten optischen Wellenleiterschicht einander gleichen.
  4. Laser nach Anspruch 3, in welchem die aktive Quantentopfschicht eine Zusammensetzung Inx1Ga1-x1As1-y1Py1 (0,0≤x1≤1,0; 0,1≤y1≤0,9) aufweist mit Werten von x1 und y1, die der Bedingung (aGaAs -a)/aGaAs≥0,3 (%) entspricht, wobei aGaAs die Gitterkonstante des GaAs und a die Hauptmassen-Gitterkonstante von Inx1Ga1-x1As1-y1Py1 repräsentiert,
    jede von der ersten und der zweiten Sperrschicht eine Zusammensetzung Inx2(Ga1-z2Alz2)1-x2As1-y2Py2 (0,0≤x2≤1,0; y2=y1; 0,0≤z2≤1,0) aufweist,
    jede von der ersten und der zweiten optischen Wellenleiterschicht eine Zusammensetzung Inx3(Ga1-z3Alz3)1-x3As1-y3Py3 (0,0≤x3≤1,0; y3=y1; 0,0≤z3≤1,0) aufweist, und
    jede Kaschierungsschicht von dem ersten Leitungstyp und dem zweiten Leitungstyp eine Zusammensetzung Inx4(Ga1-z4Alz4)1-x4As1-y4Py4 (0,0≤x4≤1,0; 0,0≤y4 ≤0,9; 0,0≤z4≤1,0) aufweist.
EP97109778A 1996-06-17 1997-06-16 Halbleiterlaser Expired - Lifetime EP0814548B1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP15569196A JPH104237A (ja) 1996-06-17 1996-06-17 半導体レーザ
JP15569196 1996-06-17
JP155691/96 1996-06-17
JP187353/96 1996-07-17
JP18735396 1996-07-17
JP18735396A JP4033930B2 (ja) 1996-07-17 1996-07-17 半導体レーザ

Publications (3)

Publication Number Publication Date
EP0814548A2 EP0814548A2 (de) 1997-12-29
EP0814548A3 EP0814548A3 (de) 1999-06-23
EP0814548B1 true EP0814548B1 (de) 2003-10-29

Family

ID=26483621

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97109778A Expired - Lifetime EP0814548B1 (de) 1996-06-17 1997-06-16 Halbleiterlaser

Country Status (3)

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US (1) US6028874A (de)
EP (1) EP0814548B1 (de)
DE (1) DE69725783T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3985283B2 (ja) * 1997-01-22 2007-10-03 ソニー株式会社 発光素子
US6219365B1 (en) * 1998-11-03 2001-04-17 Wisconsin Alumni Research Foundation High performance aluminum free active region semiconductor lasers
US6614821B1 (en) * 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
GB2353899A (en) 1999-09-01 2001-03-07 Sharp Kk A quantum well semiconductor device with strained barrier layer
DE60021505T2 (de) * 1999-11-19 2006-06-01 Fuji Photo Film Co. Ltd., Minamiashigara Hochleistungshalbleiterlaser mit Strombegrenzung und indexgeführter Struktur
US6973109B2 (en) * 2000-02-28 2005-12-06 Fuji Photo Film Co., Ltd. Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
JP2001308466A (ja) * 2000-04-24 2001-11-02 Fuji Photo Film Co Ltd 半導体レーザ装置
KR100591705B1 (ko) * 2000-09-21 2006-06-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 그것을 포함한 광학장치
JP2002204032A (ja) * 2000-10-31 2002-07-19 Fuji Photo Film Co Ltd 半導体レーザ素子
JP2002374042A (ja) * 2000-12-12 2002-12-26 Fuji Photo Film Co Ltd 半導体レーザ素子
EP1263100A3 (de) * 2001-05-28 2005-02-09 Fuji Photo Film Co., Ltd. Halbleiterlaser und dessen Herstellungsverfahren
US7801194B2 (en) * 2002-07-01 2010-09-21 Sharp Kabushiki Kaisha Semiconductor laser device and optical disk unit using the same
JP2004296637A (ja) * 2003-03-26 2004-10-21 Sharp Corp 半導体レーザ装置および光ディスク装置
EP1866955A4 (de) 2005-03-25 2011-02-02 Trumpf Photonics Inc Laserfacettenpassivierung
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
US7903711B1 (en) * 2009-11-13 2011-03-08 Coherent, Inc. Separate confinement heterostructure with asymmetric structure and composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276698A (en) * 1990-09-20 1994-01-04 Sumitomo Electric Ind., Ltd. Semiconductor laser having an optical waveguide layer including an AlGaInP active layer
JPH05145178A (ja) * 1991-11-18 1993-06-11 Furukawa Electric Co Ltd:The 歪量子井戸半導体レーザ素子
CA2138912C (en) * 1993-12-24 1999-05-04 Shoji Ishizaka Semiconductor laser device
JPH0878786A (ja) * 1994-09-02 1996-03-22 Mitsubishi Electric Corp 歪量子井戸の構造
JPH0878771A (ja) * 1994-09-02 1996-03-22 Sumitomo Electric Ind Ltd 半導体レーザとその製造方法

Also Published As

Publication number Publication date
EP0814548A3 (de) 1999-06-23
EP0814548A2 (de) 1997-12-29
DE69725783T2 (de) 2004-07-29
US6028874A (en) 2000-02-22
DE69725783D1 (de) 2003-12-04

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