DE69701609T2 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung

Info

Publication number
DE69701609T2
DE69701609T2 DE69701609T DE69701609T DE69701609T2 DE 69701609 T2 DE69701609 T2 DE 69701609T2 DE 69701609 T DE69701609 T DE 69701609T DE 69701609 T DE69701609 T DE 69701609T DE 69701609 T2 DE69701609 T2 DE 69701609T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69701609T
Other languages
English (en)
Other versions
DE69701609D1 (de
Inventor
Michio Ohkubo
Tetsuro Ijichi
Yoshikazu Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of DE69701609D1 publication Critical patent/DE69701609D1/de
Application granted granted Critical
Publication of DE69701609T2 publication Critical patent/DE69701609T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69701609T 1996-10-07 1997-10-07 Halbleiterlaservorrichtung Expired - Fee Related DE69701609T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8265852A JPH10112566A (ja) 1996-10-07 1996-10-07 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69701609D1 DE69701609D1 (de) 2000-05-11
DE69701609T2 true DE69701609T2 (de) 2000-07-20

Family

ID=17422979

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69701609T Expired - Fee Related DE69701609T2 (de) 1996-10-07 1997-10-07 Halbleiterlaservorrichtung

Country Status (4)

Country Link
US (1) US5962873A (de)
EP (1) EP0834971B1 (de)
JP (1) JPH10112566A (de)
DE (1) DE69701609T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3710627B2 (ja) * 1997-08-13 2005-10-26 三菱化学株式会社 化合物半導体発光素子
US6396864B1 (en) * 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
JP2001068780A (ja) 1999-08-30 2001-03-16 Fuji Photo Film Co Ltd 半導体レーザ素子およびその製造方法
US6488375B2 (en) 1999-10-28 2002-12-03 Ocular Sciences, Inc. Tinted contact lens and method for making same
DE10048475C2 (de) * 2000-09-29 2003-04-17 Lumics Gmbh Passivierung der Resonatorendflächen von Halbleiterlasern auf der Basis von III-V-Halbleitermaterial
US6898224B2 (en) * 2001-08-22 2005-05-24 The Furukawa Electric Co., Ltd. Semiconductor laser device
JP2003078199A (ja) * 2001-09-03 2003-03-14 Fuji Photo Film Co Ltd 半導体レーザ装置
KR100453962B1 (ko) 2001-12-10 2004-10-20 엘지전자 주식회사 반도체 레이저 소자 및 그의 벽개면에 윈도우층을형성하는 방법
US7544674B2 (en) * 2002-10-25 2009-06-09 Galderma S.A. Topical skin care composition
US7601300B2 (en) * 2003-10-28 2009-10-13 BIOMéRIEUX, INC. Compact, integrated system for processing test samples
US7585792B2 (en) * 2005-02-09 2009-09-08 S.O.I.Tec Silicon On Insulator Technologies Relaxation of a strained layer using a molten layer
CN101501816A (zh) 2005-03-25 2009-08-05 通快光子学公司 激光器腔面钝化

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214713Y2 (de) * 1977-11-10 1987-04-15
EP0416190B1 (de) * 1989-09-07 1994-06-01 International Business Machines Corporation Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden
US5228047A (en) * 1990-09-21 1993-07-13 Sharp Kabushiki Kaisha Semiconductor laser device and a method for producing the same
JP2828235B2 (ja) * 1992-03-19 1998-11-25 シャープ株式会社 半導体レーザ装置
US5394424A (en) * 1993-07-14 1995-02-28 The Furukawa Electric Co., Ltd. Semiconductor laser device
JPH0878771A (ja) * 1994-09-02 1996-03-22 Sumitomo Electric Ind Ltd 半導体レーザとその製造方法

Also Published As

Publication number Publication date
JPH10112566A (ja) 1998-04-28
EP0834971B1 (de) 2000-04-05
EP0834971A1 (de) 1998-04-08
DE69701609D1 (de) 2000-05-11
US5962873A (en) 1999-10-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee