DE69836932D1 - Lichtemittierende Halbleitervorrichtung - Google Patents
Lichtemittierende HalbleitervorrichtungInfo
- Publication number
- DE69836932D1 DE69836932D1 DE69836932T DE69836932T DE69836932D1 DE 69836932 D1 DE69836932 D1 DE 69836932D1 DE 69836932 T DE69836932 T DE 69836932T DE 69836932 T DE69836932 T DE 69836932T DE 69836932 D1 DE69836932 D1 DE 69836932D1
- Authority
- DE
- Germany
- Prior art keywords
- light
- semiconductor device
- emitting semiconductor
- emitting
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7426497 | 1997-03-26 | ||
JP7426697 | 1997-03-26 | ||
JP7293497 | 1997-03-26 | ||
JP7293597 | 1997-03-26 | ||
JP7293397 | 1997-03-26 | ||
JP7426597 | 1997-03-26 | ||
JP7426497 | 1997-03-26 | ||
JP7293397 | 1997-03-26 | ||
JP7293597 | 1997-03-26 | ||
JP7426697 | 1997-03-26 | ||
JP7293497 | 1997-03-26 | ||
JP7426597 | 1997-03-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69836932D1 true DE69836932D1 (de) | 2007-03-15 |
DE69836932T2 DE69836932T2 (de) | 2007-10-25 |
Family
ID=27551246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1998636932 Expired - Lifetime DE69836932T2 (de) | 1997-03-26 | 1998-03-25 | Lichtemittierende Halbleitervorrichtung |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0867949B1 (de) |
DE (1) | DE69836932T2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6639926B1 (en) * | 1998-03-25 | 2003-10-28 | Mitsubishi Chemical Corporation | Semiconductor light-emitting device |
EP0989643B1 (de) * | 1998-09-25 | 2006-08-09 | Mitsubishi Chemical Corporation | Halbleiterlichtstrahler und dessen Herstellungsverfahren |
DE60027949T2 (de) | 1999-02-23 | 2007-01-04 | Mitsubishi Chemical Corp. | Optische Halbleitervorrichtung |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04243216A (ja) * | 1991-01-17 | 1992-08-31 | Nec Corp | 光導波路の製造方法ならびに光集積素子及びその製造方法 |
JP2882335B2 (ja) * | 1996-01-23 | 1999-04-12 | 日本電気株式会社 | 光半導体装置およびその製造方法 |
-
1998
- 1998-03-25 DE DE1998636932 patent/DE69836932T2/de not_active Expired - Lifetime
- 1998-03-25 EP EP19980302262 patent/EP0867949B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69836932T2 (de) | 2007-10-25 |
EP0867949A3 (de) | 2000-07-19 |
EP0867949B1 (de) | 2007-01-24 |
EP0867949A2 (de) | 1998-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |