DE69836932D1 - Lichtemittierende Halbleitervorrichtung - Google Patents

Lichtemittierende Halbleitervorrichtung

Info

Publication number
DE69836932D1
DE69836932D1 DE69836932T DE69836932T DE69836932D1 DE 69836932 D1 DE69836932 D1 DE 69836932D1 DE 69836932 T DE69836932 T DE 69836932T DE 69836932 T DE69836932 T DE 69836932T DE 69836932 D1 DE69836932 D1 DE 69836932D1
Authority
DE
Germany
Prior art keywords
light
semiconductor device
emitting semiconductor
emitting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69836932T
Other languages
English (en)
Other versions
DE69836932T2 (de
Inventor
Kenji Shimoyama
Katsushi Fujii
Satoru Nagao
Hideki Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Application granted granted Critical
Publication of DE69836932D1 publication Critical patent/DE69836932D1/de
Publication of DE69836932T2 publication Critical patent/DE69836932T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE1998636932 1997-03-26 1998-03-25 Lichtemittierende Halbleitervorrichtung Expired - Lifetime DE69836932T2 (de)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP7426497 1997-03-26
JP7426697 1997-03-26
JP7293497 1997-03-26
JP7293597 1997-03-26
JP7293397 1997-03-26
JP7426597 1997-03-26
JP7426497 1997-03-26
JP7293397 1997-03-26
JP7293597 1997-03-26
JP7426697 1997-03-26
JP7293497 1997-03-26
JP7426597 1997-03-26

Publications (2)

Publication Number Publication Date
DE69836932D1 true DE69836932D1 (de) 2007-03-15
DE69836932T2 DE69836932T2 (de) 2007-10-25

Family

ID=27551246

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998636932 Expired - Lifetime DE69836932T2 (de) 1997-03-26 1998-03-25 Lichtemittierende Halbleitervorrichtung

Country Status (2)

Country Link
EP (1) EP0867949B1 (de)
DE (1) DE69836932T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6639926B1 (en) * 1998-03-25 2003-10-28 Mitsubishi Chemical Corporation Semiconductor light-emitting device
EP0989643B1 (de) * 1998-09-25 2006-08-09 Mitsubishi Chemical Corporation Halbleiterlichtstrahler und dessen Herstellungsverfahren
DE60027949T2 (de) 1999-02-23 2007-01-04 Mitsubishi Chemical Corp. Optische Halbleitervorrichtung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04243216A (ja) * 1991-01-17 1992-08-31 Nec Corp 光導波路の製造方法ならびに光集積素子及びその製造方法
JP2882335B2 (ja) * 1996-01-23 1999-04-12 日本電気株式会社 光半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE69836932T2 (de) 2007-10-25
EP0867949A3 (de) 2000-07-19
EP0867949B1 (de) 2007-01-24
EP0867949A2 (de) 1998-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition