DE69414498D1 - Licht-emittierende Halbleitervorrichtung - Google Patents

Licht-emittierende Halbleitervorrichtung

Info

Publication number
DE69414498D1
DE69414498D1 DE69414498T DE69414498T DE69414498D1 DE 69414498 D1 DE69414498 D1 DE 69414498D1 DE 69414498 T DE69414498 T DE 69414498T DE 69414498 T DE69414498 T DE 69414498T DE 69414498 D1 DE69414498 D1 DE 69414498D1
Authority
DE
Germany
Prior art keywords
emitting device
semiconductor light
semiconductor
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69414498T
Other languages
English (en)
Other versions
DE69414498T2 (de
Inventor
Keizo Adomi
Nobuhiko Noto
Takao Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69414498D1 publication Critical patent/DE69414498D1/de
Application granted granted Critical
Publication of DE69414498T2 publication Critical patent/DE69414498T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
DE69414498T 1993-08-24 1994-08-19 Licht-emittierende Halbleitervorrichtung Expired - Fee Related DE69414498T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23097793A JPH0766455A (ja) 1993-08-24 1993-08-24 半導体発光装置

Publications (2)

Publication Number Publication Date
DE69414498D1 true DE69414498D1 (de) 1998-12-17
DE69414498T2 DE69414498T2 (de) 1999-06-24

Family

ID=16916294

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69414498T Expired - Fee Related DE69414498T2 (de) 1993-08-24 1994-08-19 Licht-emittierende Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5442203A (de)
EP (1) EP0641031B1 (de)
JP (1) JPH0766455A (de)
DE (1) DE69414498T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0720242A3 (de) * 1994-12-27 1997-07-30 Shinetsu Handotai Kk Lichtemittierende Halbleitervorrichtung aus AlGaInP
US5568499A (en) * 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
JPH08288544A (ja) 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
US5596595A (en) * 1995-06-08 1997-01-21 Hewlett-Packard Company Current and heat spreading transparent layers for surface-emitting lasers
DE19524655A1 (de) * 1995-07-06 1997-01-09 Huang Kuo Hsin LED-Struktur
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
JP3635757B2 (ja) * 1995-12-28 2005-04-06 昭和電工株式会社 ＡｌＧａＩｎＰ発光ダイオード
US5796769A (en) * 1996-08-19 1998-08-18 Motorola, Inc. Red light vertical cavity surface emitting laser
AU7566298A (en) * 1997-05-14 1998-12-08 Research Triangle Institute Light emitting device contact layers having substantially equal spreading resistance and method of manufacture
DE19819543A1 (de) * 1998-04-30 1999-11-11 Siemens Ag Lichtemissions-Halbleitereinrichtung
NL1009453C2 (nl) * 1998-06-19 2001-03-23 Lite On Electronics Voor licht transparante vensterlaag voor een licht-emitterende diode.
JP3472714B2 (ja) * 1999-01-25 2003-12-02 シャープ株式会社 半導体発光素子の製造方法
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
JP3814151B2 (ja) 2001-01-31 2006-08-23 信越半導体株式会社 発光素子
US6777257B2 (en) 2002-05-17 2004-08-17 Shin-Etsu Handotai Co., Ltd. Method of fabricating a light emitting device and light emitting device
JP2004128452A (ja) 2002-07-31 2004-04-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
US6759689B2 (en) 2002-08-07 2004-07-06 Shin-Etsu Handotai Co., Ltd. Light emitting element and method for manufacturing the same
JP3872398B2 (ja) 2002-08-07 2007-01-24 信越半導体株式会社 発光素子の製造方法及び発光素子
US7041529B2 (en) 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
JP2006511966A (ja) * 2002-12-20 2006-04-06 ノバラックス，インコーポレイティド 半導体素子のための支持構造体を作製する方法
JP4140007B2 (ja) * 2003-04-28 2008-08-27 信越半導体株式会社 発光素子及び発光素子の製造方法
EP1521295B1 (de) * 2003-09-30 2016-11-02 OSRAM Opto Semiconductors GmbH Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge und optoelektronischer Halbleiterchip
DE10345413A1 (de) * 2003-09-30 2005-05-04 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge und optoelektronischer Halbleiterchip
JP4651002B2 (ja) * 2004-08-12 2011-03-16 ローム株式会社 半導体発光素子
KR100674837B1 (ko) * 2005-02-28 2007-01-26 삼성전기주식회사 반도체 소자 및 그 제조방법
JP4601464B2 (ja) * 2005-03-10 2010-12-22 株式会社沖データ 半導体装置、プリントヘッド、及びそれを用いた画像形成装置
DE102008010296A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh LED mit Stromaufweitungsschicht
US8152317B2 (en) 2007-12-26 2012-04-10 Victor Company Of Japan, Limited Light source device, lighting device and image display device
JP5326538B2 (ja) * 2008-12-12 2013-10-30 信越半導体株式会社 化合物半導体基板および発光素子並びに化合物半導体基板の製造方法および発光素子の製造方法
JP2011176001A (ja) * 2010-02-23 2011-09-08 Hitachi Cable Ltd 発光素子及び発光素子の製造方法
JP6593140B2 (ja) * 2015-12-09 2019-10-23 住友電気工業株式会社 フォトダイオード
CN109994582B (zh) * 2018-01-02 2020-08-25 山东华光光电子股份有限公司 一种降低GaAs基外延片翘曲度的DBR结构
CN110190512A (zh) * 2019-05-31 2019-08-30 度亘激光技术（苏州）有限公司 DBR的制备方法及GaAs基VCSEL
US11721954B2 (en) * 2019-07-19 2023-08-08 Visual Photonics Epitaxy Co., Ltd. Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain
CN114883915B (zh) * 2022-07-12 2022-09-13 苏州长光华芯光电技术股份有限公司 一种半导体发光器件及其制备方法和测试方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958263A (en) * 1973-11-12 1976-05-18 Bell Telephone Laboratories, Incorporated Stress reduction in algaas-algaasp multilayer structures
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2581229B2 (ja) * 1989-09-22 1997-02-12 日立電線株式会社 発光ダイオード
JPH0496381A (ja) * 1990-08-13 1992-03-27 Hitachi Ltd 発光素子
JPH04186679A (ja) * 1990-11-16 1992-07-03 Daido Steel Co Ltd 発光ダイオード
JPH05259508A (ja) * 1992-03-13 1993-10-08 Omron Corp 発光素子

Also Published As

Publication number Publication date
EP0641031B1 (de) 1998-11-11
JPH0766455A (ja) 1995-03-10
US5442203A (en) 1995-08-15
EP0641031A1 (de) 1995-03-01
DE69414498T2 (de) 1999-06-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee