DE10345413A1 - Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge und optoelektronischer Halbleiterchip - Google Patents

Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge und optoelektronischer Halbleiterchip Download PDF

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Publication number
DE10345413A1
DE10345413A1 DE2003145413 DE10345413A DE10345413A1 DE 10345413 A1 DE10345413 A1 DE 10345413A1 DE 2003145413 DE2003145413 DE 2003145413 DE 10345413 A DE10345413 A DE 10345413A DE 10345413 A1 DE10345413 A1 DE 10345413A1
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Germany
Prior art keywords
group
sms
group iii
substrate
preparation
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DE2003145413
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English (en)
Inventor
Norbert Linder
Alexander Behres
Bernd Mayer
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority to DE2003145413 priority Critical patent/DE10345413A1/de
Priority to EP04022980.9A priority patent/EP1521295B1/de
Priority to US10/952,154 priority patent/US7317202B2/en
Priority to JP2004288292A priority patent/JP2005109507A/ja
Publication of DE10345413A1 publication Critical patent/DE10345413A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Es wird ein Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge auf der Basis eines ersten III/V-Verbindungshalbleitermaterialsystems mit einem ersten Gruppe V-Element auf einem Substrat oder eine Pufferschicht angegeben, das bzw. die ein Material auf der Basis eines zweiten III/V-Verbindungshalbleitermaterialsystems mit einem zweiten Gruppe V-Element umfaßt, das von dem ersten Gruppe V-Element verschieden ist. Auf das Substrat bzw. auf die Pufferschicht wird vor dem Aufbringen der epitaktischen Bauelementschichtenfolge mindestens eine Schichtabfolge mit einer ersten und einer zweiten III/V-Verbindungshalbleitermaterialschicht aufgebracht, wobei die erste und die zweite III/V-Verbindungshalbleitermaterialschicht voneinander verschiedene Zusammensetzungen aufweisen und sowohl das erste als auch das zweite Gruppe V-Element enthalten. Weiterhin wird ein entsprechender optoelektronischer Halbleiterchip angegeben.
DE2003145413 2003-09-30 2003-09-30 Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge und optoelektronischer Halbleiterchip Withdrawn DE10345413A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE2003145413 DE10345413A1 (de) 2003-09-30 2003-09-30 Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge und optoelektronischer Halbleiterchip
EP04022980.9A EP1521295B1 (de) 2003-09-30 2004-09-27 Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge und optoelektronischer Halbleiterchip
US10/952,154 US7317202B2 (en) 2003-09-30 2004-09-28 Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip
JP2004288292A JP2005109507A (ja) 2003-09-30 2004-09-30 エピタキシャル構成素子層列の製造方法および光電半導体チップ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2003145413 DE10345413A1 (de) 2003-09-30 2003-09-30 Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge und optoelektronischer Halbleiterchip

Publications (1)

Publication Number Publication Date
DE10345413A1 true DE10345413A1 (de) 2005-05-04

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DE2003145413 Withdrawn DE10345413A1 (de) 2003-09-30 2003-09-30 Verfahren zum Herstellen einer epitaktischen Bauelementschichtenfolge und optoelektronischer Halbleiterchip

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DE (1) DE10345413A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1770767A2 (de) * 2005-09-30 2007-04-04 Osram Opto Semiconductors GmbH Halbleitersubstrat aus GaAs und Halbleiterbauelement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2838818A1 (de) * 1977-09-21 1979-03-29 Ibm Lichtemittierende diodenanordnung fuer farbwiedergabe und verfahren zur herstellung
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
US5442203A (en) * 1993-08-24 1995-08-15 Shin-Etsu Handotai Co., Ltd. Semiconductor light emitting device having AlGaAsP light reflecting layers
US6542528B1 (en) * 1999-02-15 2003-04-01 Ricoh Company, Ltd. Light-emitting semiconductor device producing red wavelength optical radiation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2838818A1 (de) * 1977-09-21 1979-03-29 Ibm Lichtemittierende diodenanordnung fuer farbwiedergabe und verfahren zur herstellung
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
US5442203A (en) * 1993-08-24 1995-08-15 Shin-Etsu Handotai Co., Ltd. Semiconductor light emitting device having AlGaAsP light reflecting layers
US6542528B1 (en) * 1999-02-15 2003-04-01 Ricoh Company, Ltd. Light-emitting semiconductor device producing red wavelength optical radiation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1770767A2 (de) * 2005-09-30 2007-04-04 Osram Opto Semiconductors GmbH Halbleitersubstrat aus GaAs und Halbleiterbauelement
EP1770767A3 (de) * 2005-09-30 2008-08-06 OSRAM Opto Semiconductors GmbH Halbleitersubstrat aus GaAs und Halbleiterbauelement
US7875961B2 (en) 2005-09-30 2011-01-25 Osram Opto Semiconductors Gmbh Semiconductor substrate of GaAs and semiconductor device

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee