DE69325181T2 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE69325181T2 DE69325181T2 DE69325181T DE69325181T DE69325181T2 DE 69325181 T2 DE69325181 T2 DE 69325181T2 DE 69325181 T DE69325181 T DE 69325181T DE 69325181 T DE69325181 T DE 69325181T DE 69325181 T2 DE69325181 T2 DE 69325181T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9202984A SE500523C2 (sv) | 1992-10-09 | 1992-10-09 | Halvledarkomponent med minst en första och en andra komponentelektrod innefattande ett flertal på en halvledarbricka integrerade halvledarelement, som vart och ett innefattar minst en första och en andra elementelektrod på samma sida av halvledarbrickan, varid de första elementelektroderna är förbundna med den första komponentelektroden och de andra elementelektroderna är förbundna med den andra komponentelektroden. |
PCT/SE1993/000819 WO1994009511A1 (en) | 1992-10-09 | 1993-10-11 | Semiconductor component |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69325181D1 DE69325181D1 (de) | 1999-07-08 |
DE69325181T2 true DE69325181T2 (de) | 1999-12-02 |
Family
ID=20387449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69325181T Expired - Fee Related DE69325181T2 (de) | 1992-10-09 | 1993-10-11 | Halbleitervorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5625207A (de) |
EP (1) | EP0682808B1 (de) |
AU (1) | AU5289293A (de) |
DE (1) | DE69325181T2 (de) |
SE (1) | SE500523C2 (de) |
WO (1) | WO1994009511A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5721144A (en) * | 1995-04-27 | 1998-02-24 | International Business Machines Corporation | Method of making trimmable modular MOSFETs for high aspect ratio applications |
US5814847A (en) * | 1996-02-02 | 1998-09-29 | National Semiconductor Corp. | General purpose assembly programmable multi-chip package substrate |
US6630715B2 (en) * | 2001-10-01 | 2003-10-07 | International Business Machines Corporation | Asymmetrical MOSFET layout for high currents and high speed operation |
TW573450B (en) * | 2003-04-02 | 2004-01-21 | Comchip Technology Co Ltd | Process for fabricating a discrete circuit component on a substrate having fabrication stage clogged through-holes |
JP4372046B2 (ja) * | 2005-05-18 | 2009-11-25 | 株式会社東芝 | 半導体装置 |
DE102005047104B3 (de) * | 2005-09-30 | 2007-05-31 | Infineon Technologies Ag | Halbleiterbauelement mit miteinander verschalteten Zellstreifen |
SE2050244A1 (en) | 2020-03-04 | 2021-09-05 | Powonics Ab | High-current semiconductor components and systems |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4835778A (de) * | 1971-09-09 | 1973-05-26 | ||
US4636825A (en) * | 1985-10-04 | 1987-01-13 | Fairchild Semiconductor Corporation | Distributed field effect transistor structure |
US4847674A (en) * | 1987-03-10 | 1989-07-11 | Advanced Micro Devices, Inc. | High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism |
JPS63283040A (ja) * | 1987-05-15 | 1988-11-18 | Toshiba Corp | 半導体装置 |
JP3022565B2 (ja) * | 1988-09-13 | 2000-03-21 | 株式会社日立製作所 | 半導体装置 |
DE69031357T2 (de) * | 1989-04-21 | 1998-04-02 | Nec Corp | Halbleiteranordnung mit Mehrschichtleiter |
JP2965626B2 (ja) * | 1990-06-25 | 1999-10-18 | 株式会社東芝 | 半導体集積回路 |
JP3074713B2 (ja) * | 1990-09-18 | 2000-08-07 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH05136125A (ja) * | 1991-11-14 | 1993-06-01 | Hitachi Ltd | クロツク配線及びクロツク配線を有する半導体集積回路装置 |
-
1992
- 1992-10-09 SE SE9202984A patent/SE500523C2/sv not_active IP Right Cessation
-
1993
- 1993-10-11 WO PCT/SE1993/000819 patent/WO1994009511A1/en active IP Right Grant
- 1993-10-11 US US08/411,814 patent/US5625207A/en not_active Expired - Fee Related
- 1993-10-11 EP EP93923094A patent/EP0682808B1/de not_active Expired - Lifetime
- 1993-10-11 DE DE69325181T patent/DE69325181T2/de not_active Expired - Fee Related
- 1993-10-11 AU AU52892/93A patent/AU5289293A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
SE9202984D0 (sv) | 1992-10-09 |
EP0682808B1 (de) | 1999-06-02 |
SE500523C2 (sv) | 1994-07-11 |
US5625207A (en) | 1997-04-29 |
SE9202984L (sv) | 1994-04-10 |
AU5289293A (en) | 1994-05-09 |
WO1994009511A1 (en) | 1994-04-28 |
EP0682808A1 (de) | 1995-11-22 |
DE69325181D1 (de) | 1999-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |