DE69325951D1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE69325951D1
DE69325951D1 DE69325951T DE69325951T DE69325951D1 DE 69325951 D1 DE69325951 D1 DE 69325951D1 DE 69325951 T DE69325951 T DE 69325951T DE 69325951 T DE69325951 T DE 69325951T DE 69325951 D1 DE69325951 D1 DE 69325951D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69325951T
Other languages
English (en)
Other versions
DE69325951T2 (de
Inventor
Kunihiro Takahashi
Yoshikazu Kojima
Hiroaki Takasu
Tsuneo Yamazaki
Tadao Iwaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12069992A external-priority patent/JP2850072B2/ja
Priority claimed from JP22050392A external-priority patent/JP2920580B2/ja
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of DE69325951D1 publication Critical patent/DE69325951D1/de
Application granted granted Critical
Publication of DE69325951T2 publication Critical patent/DE69325951T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/105—Materials and properties semiconductor single crystal Si
DE69325951T 1992-05-13 1993-05-12 Halbleitervorrichtung Expired - Lifetime DE69325951T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12069992A JP2850072B2 (ja) 1992-05-13 1992-05-13 半導体装置
JP22050392A JP2920580B2 (ja) 1992-08-19 1992-08-19 半導体装置

Publications (2)

Publication Number Publication Date
DE69325951D1 true DE69325951D1 (de) 1999-09-16
DE69325951T2 DE69325951T2 (de) 1999-12-02

Family

ID=26458228

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325951T Expired - Lifetime DE69325951T2 (de) 1992-05-13 1993-05-12 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US5574292A (de)
EP (1) EP0574137B1 (de)
KR (1) KR100311715B1 (de)
DE (1) DE69325951T2 (de)
TW (1) TW214603B (de)

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US6593978B2 (en) * 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US5528397A (en) 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
DE69529493T2 (de) * 1994-06-20 2003-10-30 Canon Kk Anzeigevorrichtung und Verfahren zu ihrer Herstellung
JPH0864824A (ja) * 1994-08-24 1996-03-08 Toshiba Corp 薄膜トランジスタおよびその製造方法
US5536950A (en) * 1994-10-28 1996-07-16 Honeywell Inc. High resolution active matrix LCD cell design
JP3078720B2 (ja) 1994-11-02 2000-08-21 三菱電機株式会社 半導体装置およびその製造方法
JP3109968B2 (ja) * 1994-12-12 2000-11-20 キヤノン株式会社 アクティブマトリクス回路基板の製造方法及び該回路基板を用いた液晶表示装置の製造方法
JP2900229B2 (ja) * 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
DE69633994D1 (de) * 1995-02-17 2005-01-13 Citizen Watch Co Ltd Flüssigkristallanzeigeelement
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
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JPH09146108A (ja) 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
TW374196B (en) * 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
US8603870B2 (en) 1996-07-11 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
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US5770881A (en) * 1996-09-12 1998-06-23 International Business Machines Coproration SOI FET design to reduce transient bipolar current
JP3728755B2 (ja) 1996-10-22 2005-12-21 セイコーエプソン株式会社 アクティブマトリックス型液晶パネル
US7872728B1 (en) * 1996-10-22 2011-01-18 Seiko Epson Corporation Liquid crystal panel substrate, liquid crystal panel, and electronic device and projection display device using the same
DE69726819T2 (de) 1996-10-22 2004-07-01 Seiko Epson Corp. Substrat für eine reflektive Flüssigkristalltafel
JP3716580B2 (ja) * 1997-02-27 2005-11-16 セイコーエプソン株式会社 液晶装置及びその製造方法、並びに投写型表示装置
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US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
US6559036B1 (en) * 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100459482B1 (ko) * 1998-10-02 2005-06-10 엘지.필립스 엘시디 주식회사 박막트랜지스터및그제조방법
US6771239B1 (en) * 1999-05-17 2004-08-03 Seiko Epson Corporation Method for manufacturing an active matrix substrate
US6387741B1 (en) * 1999-06-03 2002-05-14 Asahi Kasei Microsystems Co., Ltd. Manufacturing a semiconductor device with isolated circuit-element formation layers of different thicknesses
US6358759B1 (en) * 1999-07-16 2002-03-19 Seiko Epson Corporation Method for manufacturing electro-optical device, electro-optical device, and electronic equipment
US6384461B1 (en) * 1999-10-15 2002-05-07 Xerox Corporation Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays
JP4812971B2 (ja) * 2000-10-13 2011-11-09 共同印刷株式会社 液晶表示装置の電極基材の製造方法
KR100778835B1 (ko) * 2000-12-28 2007-11-22 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4653374B2 (ja) * 2001-08-23 2011-03-16 セイコーエプソン株式会社 電気光学装置の製造方法
JP3669351B2 (ja) * 2001-10-04 2005-07-06 セイコーエプソン株式会社 電気光学装置及び電子機器
US6764917B1 (en) * 2001-12-20 2004-07-20 Advanced Micro Devices, Inc. SOI device with different silicon thicknesses
JP3916536B2 (ja) * 2002-09-02 2007-05-16 沖電気工業株式会社 Ｌｓｉデバイスの製造方法
US7274413B1 (en) * 2002-12-06 2007-09-25 United States Of America As Represented By The Secretary Of The Navy Flexible video display apparatus and method
EP1636851A1 (de) * 2003-06-11 2006-03-22 Koninklijke Philips Electronics N.V. Unterdrückung eines parasitären kanals in einem integrierten soi prozess
US6838332B1 (en) * 2003-08-15 2005-01-04 Freescale Semiconductor, Inc. Method for forming a semiconductor device having electrical contact from opposite sides
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US20060189023A1 (en) * 2005-02-23 2006-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Three dimensional structure formed by using an adhesive silicon wafer process
US7947981B2 (en) * 2007-01-30 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Display device
US8860078B2 (en) 2012-05-14 2014-10-14 The Johns Hopkins University Simplified devices utilizing novel pn-semiconductor structures
EP2852984A4 (de) * 2012-05-14 2015-10-14 Univ Johns Hopkins Vereinfachte vorrichtungen mit neuartigen pn-halbleiterstrukturen
KR102132882B1 (ko) * 2012-12-20 2020-07-13 삼성디스플레이 주식회사 박막트랜지스터 기판, 이를 구비하는 유기 발광 장치, 박막트랜지스터 기판 제조방법 및 유기 발광 장치 제조방법
CN104240633B (zh) * 2013-06-07 2018-01-09 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及其制造方法
KR102079253B1 (ko) * 2013-06-26 2020-02-20 삼성디스플레이 주식회사 박막트랜지스터 기판, 이를 구비하는 유기 발광 장치, 박막트랜지스터 기판 제조방법 및 유기 발광 장치 제조방법
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Also Published As

Publication number Publication date
DE69325951T2 (de) 1999-12-02
EP0574137A1 (de) 1993-12-15
KR100311715B1 (ko) 2002-08-21
TW214603B (en) 1993-10-11
US5574292A (en) 1996-11-12
KR940006283A (ko) 1994-03-23
EP0574137B1 (de) 1999-08-11

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