DE69322747T2 - Halbleiterspeicheranordnung - Google Patents
HalbleiterspeicheranordnungInfo
- Publication number
- DE69322747T2 DE69322747T2 DE69322747T DE69322747T DE69322747T2 DE 69322747 T2 DE69322747 T2 DE 69322747T2 DE 69322747 T DE69322747 T DE 69322747T DE 69322747 T DE69322747 T DE 69322747T DE 69322747 T2 DE69322747 T2 DE 69322747T2
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32298392 | 1992-12-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69322747D1 DE69322747D1 (de) | 1999-02-04 |
DE69322747T2 true DE69322747T2 (de) | 1999-06-24 |
Family
ID=18149835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69322747T Expired - Lifetime DE69322747T2 (de) | 1992-12-02 | 1993-11-30 | Halbleiterspeicheranordnung |
Country Status (6)
Country | Link |
---|---|
US (2) | US5392234A (de) |
EP (1) | EP0600434B1 (de) |
KR (1) | KR970000870B1 (de) |
CN (1) | CN1040706C (de) |
DE (1) | DE69322747T2 (de) |
TW (1) | TW323367B (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07111085A (ja) * | 1993-10-14 | 1995-04-25 | Sharp Corp | 不揮発性半導体記憶装置 |
DE59407878D1 (de) * | 1994-01-12 | 1999-04-08 | Siemens Ag | Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb |
JP3218844B2 (ja) * | 1994-03-22 | 2001-10-15 | 松下電器産業株式会社 | 半導体メモリ装置 |
TW378323B (en) * | 1994-09-22 | 2000-01-01 | Matsushita Electric Ind Co Ltd | Ferroelectric memory device |
JPH08115265A (ja) * | 1994-10-15 | 1996-05-07 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP3183076B2 (ja) * | 1994-12-27 | 2001-07-03 | 日本電気株式会社 | 強誘電体メモリ装置 |
JP3127751B2 (ja) * | 1995-01-04 | 2001-01-29 | 日本電気株式会社 | 強誘電体メモリ装置およびその動作制御方法 |
JPH08203266A (ja) * | 1995-01-27 | 1996-08-09 | Nec Corp | 強誘電体メモリ装置 |
US5530668A (en) * | 1995-04-12 | 1996-06-25 | Ramtron International Corporation | Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage |
US5619447A (en) * | 1995-05-02 | 1997-04-08 | Motorola, Inc. | Ferro-electric memory array architecture and method for forming the same |
US5675530A (en) * | 1995-08-02 | 1997-10-07 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric memory device |
SG79200A1 (en) * | 1995-08-21 | 2001-03-20 | Matsushita Electric Ind Co Ltd | Ferroelectric memory devices and method for testing them |
JPH09120685A (ja) * | 1995-10-24 | 1997-05-06 | Sony Corp | 強誘電体記憶装置 |
US5737260A (en) * | 1996-03-27 | 1998-04-07 | Sharp Kabushiki Kaisha | Dual mode ferroelectric memory reference scheme |
WO1998056003A1 (fr) * | 1997-06-05 | 1998-12-10 | Matsushita Electronics Corporation | Dispositif a memoire ferroelectrique et son procede de commande |
KR100363102B1 (ko) * | 1998-07-15 | 2003-02-19 | 주식회사 하이닉스반도체 | 강유전체 메모리 |
KR100389130B1 (ko) * | 2001-04-25 | 2003-06-25 | 삼성전자주식회사 | 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자 |
US6649453B1 (en) * | 2002-08-29 | 2003-11-18 | Micron Technology, Inc. | Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation |
US6906945B2 (en) * | 2003-11-18 | 2005-06-14 | Texas Instruments Incorporated | Bitline precharge timing scheme to improve signal margin |
JP6362542B2 (ja) * | 2012-02-16 | 2018-07-25 | ジーノ セミコンダクター, インコーポレイテッド | 第1および第2のトランジスタを備えるメモリセルおよび動作の方法 |
JP6737953B2 (ja) | 2016-08-31 | 2020-08-12 | マイクロン テクノロジー,インク. | 強誘電体メモリを含む装置および強誘電体メモリにアクセスするための方法 |
WO2018044510A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Apparatuses and methods including two transistor-one capacitor memory and for accessing same |
JP6980006B2 (ja) | 2016-08-31 | 2021-12-15 | マイクロン テクノロジー,インク. | 強誘電体メモリセル |
WO2018044486A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory |
US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
JPH088339B2 (ja) * | 1988-10-19 | 1996-01-29 | 株式会社東芝 | 半導体メモリ |
DE4110407A1 (de) * | 1990-03-30 | 1991-10-02 | Toshiba Kawasaki Kk | Halbleiter-speicheranordnung |
US5400275A (en) * | 1990-06-08 | 1995-03-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected |
US5381364A (en) * | 1993-06-24 | 1995-01-10 | Ramtron International Corporation | Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation |
-
1993
- 1993-11-29 KR KR1019930025618A patent/KR970000870B1/ko not_active IP Right Cessation
- 1993-11-30 DE DE69322747T patent/DE69322747T2/de not_active Expired - Lifetime
- 1993-11-30 TW TW082110130A patent/TW323367B/zh not_active IP Right Cessation
- 1993-11-30 EP EP93119267A patent/EP0600434B1/de not_active Expired - Lifetime
- 1993-12-02 US US08/161,328 patent/US5392234A/en not_active Expired - Lifetime
- 1993-12-02 CN CN93112773A patent/CN1040706C/zh not_active Expired - Fee Related
-
1994
- 1994-12-12 US US08/354,476 patent/US5467302A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5467302A (en) | 1995-11-14 |
CN1040706C (zh) | 1998-11-11 |
EP0600434A2 (de) | 1994-06-08 |
TW323367B (de) | 1997-12-21 |
CN1091544A (zh) | 1994-08-31 |
DE69322747D1 (de) | 1999-02-04 |
EP0600434A3 (de) | 1996-06-05 |
KR970000870B1 (ko) | 1997-01-20 |
US5392234A (en) | 1995-02-21 |
KR940016262A (ko) | 1994-07-22 |
EP0600434B1 (de) | 1998-12-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
|
8320 | Willingness to grant licences declared (paragraph 23) |