DE69222793T2 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69222793T2
DE69222793T2 DE69222793T DE69222793T DE69222793T2 DE 69222793 T2 DE69222793 T2 DE 69222793T2 DE 69222793 T DE69222793 T DE 69222793T DE 69222793 T DE69222793 T DE 69222793T DE 69222793 T2 DE69222793 T2 DE 69222793T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69222793T
Other languages
English (en)
Other versions
DE69222793D1 (de
Inventor
Tohru Furuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4048312A external-priority patent/JP2567177B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69222793D1 publication Critical patent/DE69222793D1/de
Publication of DE69222793T2 publication Critical patent/DE69222793T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
DE69222793T 1991-03-14 1992-03-12 Halbleiterspeicheranordnung Expired - Fee Related DE69222793T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7483091 1991-03-14
JP4048312A JP2567177B2 (ja) 1991-03-14 1992-03-05 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69222793D1 DE69222793D1 (de) 1997-11-27
DE69222793T2 true DE69222793T2 (de) 1998-03-12

Family

ID=26388557

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69222793T Expired - Fee Related DE69222793T2 (de) 1991-03-14 1992-03-12 Halbleiterspeicheranordnung

Country Status (3)

Country Link
US (1) US5317540A (de)
EP (1) EP0503633B1 (de)
DE (1) DE69222793T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3464803B2 (ja) * 1991-11-27 2003-11-10 株式会社東芝 半導体メモリセル
JPH0628869A (ja) * 1992-05-12 1994-02-04 Takayama:Kk メモリデバイス
WO1994003901A1 (en) 1992-08-10 1994-02-17 Monolithic System Technology, Inc. Fault-tolerant, high-speed bus system and bus interface for wafer-scale integration
JP2823466B2 (ja) * 1993-01-28 1998-11-11 株式会社東芝 半導体記憶装置
US5953264A (en) * 1993-03-22 1999-09-14 Matsushita Electric Industrial Co., Ltd. Redundant memory cell selecting circuit having fuses coupled to memory cell group address and memory cell block address
JP3272888B2 (ja) * 1993-12-28 2002-04-08 株式会社東芝 半導体記憶装置
JPH07312084A (ja) * 1994-05-18 1995-11-28 Toshiba Corp キャッシュメモリ内蔵メモリ装置
US5771268A (en) * 1996-12-10 1998-06-23 International Business Machines Corporation High speed rotator with array method
US5936874A (en) * 1997-06-19 1999-08-10 Micron Technology, Inc. High density semiconductor memory and method of making
JPH11144453A (ja) * 1997-11-05 1999-05-28 Texas Instr Japan Ltd 半導体記憶装置
KR100265610B1 (ko) * 1997-12-31 2000-10-02 김영환 데이터 전송속도를 증가시킨 더블 데이터 레이트 싱크로너스 디램
US6385122B1 (en) * 2001-01-31 2002-05-07 Virage Logic Corp. Row and column accessible memory with a built-in multiplex
JP6615302B1 (ja) * 2018-11-06 2019-12-04 三菱電機株式会社 電子制御装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763480A (en) * 1971-10-12 1973-10-02 Rca Corp Digital and analog data handling devices
DE2634089B2 (de) * 1975-08-11 1978-01-05 Schaltungsanordnung zum erfassen schwacher signale
US4225945A (en) * 1976-01-12 1980-09-30 Texas Instruments Incorporated Random access MOS memory cell using double level polysilicon
JPS5848294A (ja) * 1981-09-16 1983-03-22 Mitsubishi Electric Corp Ｍｏｓダイナミツクメモリ
JPS60209996A (ja) * 1984-03-31 1985-10-22 Toshiba Corp 半導体記憶装置
JPH0793009B2 (ja) * 1984-12-13 1995-10-09 株式会社東芝 半導体記憶装置
US4648073A (en) * 1984-12-31 1987-03-03 International Business Machines Corporation Sequential shared access lines memory cells
JPS63149900A (ja) * 1986-12-15 1988-06-22 Toshiba Corp 半導体メモリ
US4980863A (en) * 1987-03-31 1990-12-25 Kabushiki Kaisha Toshiba Semiconductor memory device having switching circuit for coupling together two pairs of bit lines
US4943944A (en) * 1987-11-25 1990-07-24 Kabushiki Kaisha Toshiba Semiconductor memory using dynamic ram cells
JPH01204298A (ja) * 1988-02-08 1989-08-16 Fujitsu Ltd 半導体記憶回路
JP2682021B2 (ja) * 1988-06-29 1997-11-26 富士通株式会社 半導体メモリ装置
US5091761A (en) * 1988-08-22 1992-02-25 Hitachi, Ltd. Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover
JP2633645B2 (ja) * 1988-09-13 1997-07-23 株式会社東芝 半導体メモリ装置
US5172198A (en) * 1989-02-22 1992-12-15 Kabushiki Kaisha Toshiba MOS type semiconductor device
DE58908918D1 (de) * 1989-03-16 1995-03-02 Siemens Ag Integrierter Halbleiterspeicher vom Typ DRAM und Verfahren zu seinem Testen.
JPH02301097A (ja) * 1989-05-15 1990-12-13 Toshiba Corp ダイナミック型ランダムアクセスメモリ
JPH0762955B2 (ja) * 1989-05-15 1995-07-05 株式会社東芝 ダイナミック型ランダムアクセスメモリ
DE4015472C2 (de) * 1989-05-16 1993-12-02 Mitsubishi Electric Corp Speicherzelle und Verfahren zum Herstellen eines dynamischen RAM
JPH07122989B2 (ja) * 1990-06-27 1995-12-25 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
EP0503633A2 (de) 1992-09-16
EP0503633B1 (de) 1997-10-22
EP0503633A3 (de) 1994-02-02
DE69222793D1 (de) 1997-11-27
US5317540A (en) 1994-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee