DE69215555T2 - Halbleiterspeicheranordnung - Google Patents
HalbleiterspeicheranordnungInfo
- Publication number
- DE69215555T2 DE69215555T2 DE69215555T DE69215555T DE69215555T2 DE 69215555 T2 DE69215555 T2 DE 69215555T2 DE 69215555 T DE69215555 T DE 69215555T DE 69215555 T DE69215555 T DE 69215555T DE 69215555 T2 DE69215555 T2 DE 69215555T2
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3049673A JP2744144B2 (ja) | 1991-03-14 | 1991-03-14 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69215555D1 DE69215555D1 (de) | 1997-01-16 |
| DE69215555T2 true DE69215555T2 (de) | 1997-04-24 |
Family
ID=12837694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69215555T Expired - Fee Related DE69215555T2 (de) | 1991-03-14 | 1992-03-09 | Halbleiterspeicheranordnung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5258957A (de) |
| EP (1) | EP0503524B1 (de) |
| JP (1) | JP2744144B2 (de) |
| KR (1) | KR950014246B1 (de) |
| DE (1) | DE69215555T2 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69329788T2 (de) * | 1992-10-14 | 2001-08-02 | Sun Microsystems Inc | Direktzugriffspeicherentwurf |
| US5986914A (en) * | 1993-03-31 | 1999-11-16 | Stmicroelectronics, Inc. | Active hierarchical bitline memory architecture |
| US5742544A (en) | 1994-04-11 | 1998-04-21 | Mosaid Technologies Incorporated | Wide databus architecture |
| JPH1139877A (ja) * | 1997-07-15 | 1999-02-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH1139880A (ja) * | 1997-07-16 | 1999-02-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP4073525B2 (ja) * | 1997-09-05 | 2008-04-09 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
| US6677995B1 (en) * | 1999-02-04 | 2004-01-13 | Agere Systems Inc. | Array readout system |
| US20060176747A1 (en) * | 2005-02-09 | 2006-08-10 | International Business Machines Corporation | Circuit for interfacing local bitlines with global bitline |
| US7242624B2 (en) | 2005-06-14 | 2007-07-10 | Qualcomm Incorporated | Methods and apparatus for reading a full-swing memory array |
| JP2007213732A (ja) | 2006-02-13 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| JP2011165280A (ja) * | 2010-02-12 | 2011-08-25 | Renesas Electronics Corp | 不揮発性半導体メモリ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4618945A (en) * | 1982-08-11 | 1986-10-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device |
| JP2719783B2 (ja) * | 1987-08-28 | 1998-02-25 | 日本電信電話株式会社 | ＢｉＣＭＯＳ読出し回路 |
| JP2618938B2 (ja) * | 1987-11-25 | 1997-06-11 | 株式会社東芝 | 半導体記憶装置 |
| US5148395A (en) * | 1989-04-26 | 1992-09-15 | Exar Corporation | Dual eeprom cell with current mirror differential read |
-
1991
- 1991-03-14 JP JP3049673A patent/JP2744144B2/ja not_active Expired - Fee Related
-
1992
- 1992-03-09 DE DE69215555T patent/DE69215555T2/de not_active Expired - Fee Related
- 1992-03-09 EP EP92103976A patent/EP0503524B1/de not_active Expired - Lifetime
- 1992-03-11 US US07/849,458 patent/US5258957A/en not_active Expired - Lifetime
- 1992-03-14 KR KR1019920004180A patent/KR950014246B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US5258957A (en) | 1993-11-02 |
| EP0503524A2 (de) | 1992-09-16 |
| KR950014246B1 (ko) | 1995-11-23 |
| DE69215555D1 (de) | 1997-01-16 |
| JP2744144B2 (ja) | 1998-04-28 |
| KR920018762A (ko) | 1992-10-22 |
| EP0503524A3 (en) | 1993-11-03 |
| JPH04285794A (ja) | 1992-10-09 |
| EP0503524B1 (de) | 1996-12-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |