DE69225298T2 - Halbleiterspeichervorrichtung - Google Patents
HalbleiterspeichervorrichtungInfo
- Publication number
- DE69225298T2 DE69225298T2 DE69225298T DE69225298T DE69225298T2 DE 69225298 T2 DE69225298 T2 DE 69225298T2 DE 69225298 T DE69225298 T DE 69225298T DE 69225298 T DE69225298 T DE 69225298T DE 69225298 T2 DE69225298 T2 DE 69225298T2
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31239891A JP3464803B2 (ja) | 1991-11-27 | 1991-11-27 | 半導体メモリセル |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69225298D1 DE69225298D1 (de) | 1998-06-04 |
DE69225298T2 true DE69225298T2 (de) | 1998-10-01 |
Family
ID=18028768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69225298T Expired - Fee Related DE69225298T2 (de) | 1991-11-27 | 1992-11-27 | Halbleiterspeichervorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5500815A (de) |
EP (1) | EP0544320B1 (de) |
JP (1) | JP3464803B2 (de) |
KR (1) | KR960002816B1 (de) |
DE (1) | DE69225298T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5452244A (en) * | 1994-08-10 | 1995-09-19 | Cirrus Logic, Inc. | Electronic memory and methods for making and using the same |
JP3304635B2 (ja) * | 1994-09-26 | 2002-07-22 | 三菱電機株式会社 | 半導体記憶装置 |
US5513148A (en) * | 1994-12-01 | 1996-04-30 | Micron Technology Inc. | Synchronous NAND DRAM architecture |
JP2783271B2 (ja) * | 1995-01-30 | 1998-08-06 | 日本電気株式会社 | 半導体記憶装置 |
US6480407B1 (en) | 1995-08-25 | 2002-11-12 | Micron Technology, Inc. | Reduced area sense amplifier isolation layout in a dynamic RAM architecture |
US5936874A (en) * | 1997-06-19 | 1999-08-10 | Micron Technology, Inc. | High density semiconductor memory and method of making |
US6292387B1 (en) | 2000-01-20 | 2001-09-18 | Micron Technology, Inc. | Selective device coupling |
US6301172B1 (en) * | 2001-02-27 | 2001-10-09 | Micron Technology, Inc. | Gate voltage testkey for isolation transistor |
US6590817B2 (en) * | 2001-07-23 | 2003-07-08 | Micron Technology, Inc. | 6F2 DRAM array with apparatus for stress testing an isolation gate and method |
JP3905337B2 (ja) * | 2001-07-31 | 2007-04-18 | 富士通株式会社 | 半導体集積回路 |
JP2010232398A (ja) * | 2009-03-27 | 2010-10-14 | Elpida Memory Inc | 半導体装置および半導体装置の制御方法 |
CN105742364A (zh) * | 2016-04-12 | 2016-07-06 | 中山大学 | 一种抑制有源沟道区光致漏电流产生的mos管及应用 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6807435A (de) * | 1968-05-25 | 1969-11-27 | ||
US3763480A (en) * | 1971-10-12 | 1973-10-02 | Rca Corp | Digital and analog data handling devices |
DE2634089B2 (de) * | 1975-08-11 | 1978-01-05 | Schaltungsanordnung zum erfassen schwacher signale | |
US4225945A (en) * | 1976-01-12 | 1980-09-30 | Texas Instruments Incorporated | Random access MOS memory cell using double level polysilicon |
JPS5848294A (ja) * | 1981-09-16 | 1983-03-22 | Mitsubishi Electric Corp | Mosダイナミツクメモリ |
US4669063A (en) * | 1982-12-30 | 1987-05-26 | Thomson Components-Mostek Corp. | Sense amplifier for a dynamic RAM |
JPS60209996A (ja) * | 1984-03-31 | 1985-10-22 | Toshiba Corp | 半導体記憶装置 |
EP0169460B1 (de) * | 1984-07-26 | 1991-05-15 | Texas Instruments Incorporated | Dynamischer Speicheraufbau mit segmentierten und quasi-gefalteten Bitzeilen |
JPH0793009B2 (ja) * | 1984-12-13 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置 |
US4648073A (en) * | 1984-12-31 | 1987-03-03 | International Business Machines Corporation | Sequential shared access lines memory cells |
JPS62197989A (ja) * | 1986-02-26 | 1987-09-01 | Hitachi Ltd | 半導体記憶装置 |
JPS63149900A (ja) * | 1986-12-15 | 1988-06-22 | Toshiba Corp | 半導体メモリ |
US4980863A (en) * | 1987-03-31 | 1990-12-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device having switching circuit for coupling together two pairs of bit lines |
JPH01134796A (ja) * | 1987-11-19 | 1989-05-26 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US4943944A (en) * | 1987-11-25 | 1990-07-24 | Kabushiki Kaisha Toshiba | Semiconductor memory using dynamic ram cells |
JPH01204298A (ja) * | 1988-02-08 | 1989-08-16 | Fujitsu Ltd | 半導体記憶回路 |
JP2682021B2 (ja) * | 1988-06-29 | 1997-11-26 | 富士通株式会社 | 半導体メモリ装置 |
US5091761A (en) * | 1988-08-22 | 1992-02-25 | Hitachi, Ltd. | Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover |
JP2633645B2 (ja) * | 1988-09-13 | 1997-07-23 | 株式会社東芝 | 半導体メモリ装置 |
EP0365720B1 (de) * | 1988-10-24 | 1996-04-03 | Kabushiki Kaisha Toshiba | Programmierbarer Halbleiterspeicher |
US5172198A (en) * | 1989-02-22 | 1992-12-15 | Kabushiki Kaisha Toshiba | MOS type semiconductor device |
DE58908918D1 (de) * | 1989-03-16 | 1995-03-02 | Siemens Ag | Integrierter Halbleiterspeicher vom Typ DRAM und Verfahren zu seinem Testen. |
JPH0762955B2 (ja) * | 1989-05-15 | 1995-07-05 | 株式会社東芝 | ダイナミック型ランダムアクセスメモリ |
JPH02301097A (ja) * | 1989-05-15 | 1990-12-13 | Toshiba Corp | ダイナミック型ランダムアクセスメモリ |
DE4015472C2 (de) * | 1989-05-16 | 1993-12-02 | Mitsubishi Electric Corp | Speicherzelle und Verfahren zum Herstellen eines dynamischen RAM |
JPH0834257B2 (ja) * | 1990-04-20 | 1996-03-29 | 株式会社東芝 | 半導体メモリセル |
JPH07122989B2 (ja) * | 1990-06-27 | 1995-12-25 | 株式会社東芝 | 半導体記憶装置 |
JP2660111B2 (ja) * | 1991-02-13 | 1997-10-08 | 株式会社東芝 | 半導体メモリセル |
DE69222793T2 (de) * | 1991-03-14 | 1998-03-12 | Toshiba Kawasaki Kk | Halbleiterspeicheranordnung |
-
1991
- 1991-11-27 JP JP31239891A patent/JP3464803B2/ja not_active Expired - Fee Related
-
1992
- 1992-11-25 US US07/981,541 patent/US5500815A/en not_active Expired - Lifetime
- 1992-11-27 EP EP92120292A patent/EP0544320B1/de not_active Expired - Lifetime
- 1992-11-27 KR KR1019920022565A patent/KR960002816B1/ko not_active IP Right Cessation
- 1992-11-27 DE DE69225298T patent/DE69225298T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3464803B2 (ja) | 2003-11-10 |
EP0544320A2 (de) | 1993-06-02 |
EP0544320A3 (de) | 1994-04-06 |
EP0544320B1 (de) | 1998-04-29 |
JPH05152544A (ja) | 1993-06-18 |
DE69225298D1 (de) | 1998-06-04 |
KR960002816B1 (ko) | 1996-02-26 |
KR930010988A (ko) | 1993-06-23 |
US5500815A (en) | 1996-03-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |