DE69312799T2 - Optoelektronische Halbleiteranordnung - Google Patents

Optoelektronische Halbleiteranordnung

Info

Publication number
DE69312799T2
DE69312799T2 DE69312799T DE69312799T DE69312799T2 DE 69312799 T2 DE69312799 T2 DE 69312799T2 DE 69312799 T DE69312799 T DE 69312799T DE 69312799 T DE69312799 T DE 69312799T DE 69312799 T2 DE69312799 T2 DE 69312799T2
Authority
DE
Germany
Prior art keywords
semiconductor device
optoelectronic semiconductor
optoelectronic
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69312799T
Other languages
English (en)
Other versions
DE69312799D1 (de
Inventor
Adriaan Valster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69312799D1 publication Critical patent/DE69312799D1/de
Publication of DE69312799T2 publication Critical patent/DE69312799T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
DE69312799T 1992-05-18 1993-05-11 Optoelektronische Halbleiteranordnung Expired - Fee Related DE69312799T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92201399 1992-05-18

Publications (2)

Publication Number Publication Date
DE69312799D1 DE69312799D1 (de) 1997-09-11
DE69312799T2 true DE69312799T2 (de) 1998-02-12

Family

ID=8210612

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69312799T Expired - Fee Related DE69312799T2 (de) 1992-05-18 1993-05-11 Optoelektronische Halbleiteranordnung

Country Status (3)

Country Link
US (1) US5468975A (de)
JP (1) JPH0773148B2 (de)
DE (1) DE69312799T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015851A (ja) * 1999-07-01 2001-01-19 Sony Corp 半導体レーザ素子及びその作製方法
ATE533212T1 (de) 2000-08-09 2011-11-15 Santur Corp Verstimmbarer laserdiode mit verteilter rückkopplung
WO2002037069A1 (en) * 2000-10-30 2002-05-10 Santur Corporation Laser and fiber coupling control
WO2002058197A2 (en) * 2000-10-30 2002-07-25 Santur Corporation Laser thermal tuning
US6914916B2 (en) * 2000-10-30 2005-07-05 Santur Corporation Tunable controlled laser array
WO2002063372A1 (en) * 2001-01-16 2002-08-15 Santur Corporation Tunable optical device using a scanning mems mirror
WO2002084742A1 (en) 2001-03-30 2002-10-24 Santur Corporation Switched laser array modulation with integral electroabsorption modulator
US6816529B2 (en) 2001-03-30 2004-11-09 Santur Corporation High speed modulation of arrayed lasers
WO2002080317A1 (en) 2001-03-30 2002-10-10 Santur Corporation Alignment of an on chip modulator
WO2002079864A1 (en) 2001-03-30 2002-10-10 Santur Corporation Modulator alignment for laser
US6879442B2 (en) * 2001-08-08 2005-04-12 Santur Corporation Method and system for selecting an output of a VCSEL array
US6910780B2 (en) * 2002-04-01 2005-06-28 Santur Corporation Laser and laser signal combiner
US20040190580A1 (en) * 2003-03-04 2004-09-30 Bardia Pezeshki High-yield high-precision distributed feedback laser based on an array
JP4885434B2 (ja) * 2003-11-27 2012-02-29 シャープ株式会社 半導体レーザ素子、光ディスク装置および光伝送システム
JP2005175450A (ja) * 2003-11-21 2005-06-30 Sharp Corp 化合物半導体装置およびその製造方法、ならびにその化合物半導体装置を備えた光ディスク装置
JP2008235442A (ja) 2007-03-19 2008-10-02 Fujitsu Ltd 半導体発光素子及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722213B2 (ja) * 1985-06-12 1995-03-08 三洋電機株式会社 半導体レーザ
US4788688A (en) * 1986-06-20 1988-11-29 University Of Southern California Heterostructure laser
JP2807250B2 (ja) * 1989-02-22 1998-10-08 株式会社東芝 半導体レーザ装置
NL8900748A (nl) * 1989-03-28 1990-10-16 Philips Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
NL9001193A (nl) * 1990-05-23 1991-12-16 Koninkl Philips Electronics Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
JPH04106991A (ja) * 1990-08-27 1992-04-08 Nec Corp 半導体レーザ
JPH04162482A (ja) * 1990-10-24 1992-06-05 Nec Corp 半導体レーザ
US5239189A (en) * 1991-06-07 1993-08-24 Eastman Kodak Company Integrated light emitting and light detecting device

Also Published As

Publication number Publication date
JPH0773148B2 (ja) 1995-08-02
US5468975A (en) 1995-11-21
JPH0637405A (ja) 1994-02-10
DE69312799D1 (de) 1997-09-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US

8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee