DE69227663D1 - Halbleitereinrichtung - Google Patents
HalbleitereinrichtungInfo
- Publication number
- DE69227663D1 DE69227663D1 DE69227663T DE69227663T DE69227663D1 DE 69227663 D1 DE69227663 D1 DE 69227663D1 DE 69227663 T DE69227663 T DE 69227663T DE 69227663 T DE69227663 T DE 69227663T DE 69227663 D1 DE69227663 D1 DE 69227663D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
- Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3226848A JP2916306B2 (ja) | 1991-09-06 | 1991-09-06 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69227663D1 true DE69227663D1 (de) | 1999-01-07 |
DE69227663T2 DE69227663T2 (de) | 1999-05-12 |
Family
ID=16851514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69227663T Expired - Lifetime DE69227663T2 (de) | 1991-09-06 | 1992-09-04 | Halbleitereinrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5396105A (de) |
EP (1) | EP0534203B1 (de) |
JP (1) | JP2916306B2 (de) |
KR (1) | KR960012301B1 (de) |
DE (1) | DE69227663T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07176633A (ja) * | 1993-12-20 | 1995-07-14 | Nec Corp | Cmos型スタティックメモリ |
JP3686144B2 (ja) * | 1995-12-07 | 2005-08-24 | 株式会社ルネサステクノロジ | 半導体記憶装置およびその製造方法 |
KR100249156B1 (ko) * | 1997-05-13 | 2000-03-15 | 김영환 | 에스램(sram)셀및그제조방법 |
DE19839272B4 (de) * | 1997-09-11 | 2007-02-01 | Iro Sweden Ab | Steuerbare Fadenbremse |
US6924560B2 (en) * | 2003-08-08 | 2005-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Compact SRAM cell with FinFET |
KR20050018300A (ko) * | 2003-08-09 | 2005-02-23 | 최호진 | 니코틴 감소 필터구멍 형성방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0032608A1 (de) * | 1980-01-22 | 1981-07-29 | Mostek Corporation | Statische RAM-Zelle mit Stromversorgung über die Spaltenleiter |
GB8700347D0 (en) * | 1987-01-08 | 1987-02-11 | Inmos Ltd | Memory cell |
US4951112A (en) * | 1987-01-28 | 1990-08-21 | Advanced Micro Devices, Inc. | Triple-poly 4T static ram cell with two independent transistor gates |
JPH01152662A (ja) * | 1987-12-09 | 1989-06-15 | Fujitsu Ltd | 半導体記憶装置 |
EP0426174B1 (de) * | 1989-11-02 | 1994-07-27 | Seiko Epson Corporation | Integrierte Halbleiterschaltung |
-
1991
- 1991-09-06 JP JP3226848A patent/JP2916306B2/ja not_active Expired - Fee Related
-
1992
- 1992-09-03 KR KR1019920015984A patent/KR960012301B1/ko not_active IP Right Cessation
- 1992-09-04 DE DE69227663T patent/DE69227663T2/de not_active Expired - Lifetime
- 1992-09-04 US US07/941,325 patent/US5396105A/en not_active Expired - Fee Related
- 1992-09-04 EP EP92115166A patent/EP0534203B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR960012301B1 (ko) | 1996-09-18 |
EP0534203A3 (en) | 1993-08-25 |
DE69227663T2 (de) | 1999-05-12 |
KR930006949A (ko) | 1993-04-22 |
EP0534203B1 (de) | 1998-11-25 |
US5396105A (en) | 1995-03-07 |
EP0534203A2 (de) | 1993-03-31 |
JP2916306B2 (ja) | 1999-07-05 |
JPH0567744A (ja) | 1993-03-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |
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